公开(公告)号：US20220403522A1

公开(公告)日：2022-12-22

申请号：US17897307

申请日：2022-08-29

Applicant: ASM IP Holding B.V.

Inventor： SungBae Kim ,  HakYong Kwon ,  YoungMin Kim ,  KiKang Kim ,  SeungHwan Lee

IPC: C23C16/52 ,  C23C16/44 ,  H01L21/67 ,  C23C16/455

Abstract: Methods of and systems for performing leak checks of gas-phase reactor systems are disclosed. Exemplary systems include a first exhaust system coupled to a reaction chamber via a first exhaust line, a bypass line coupled to a gas supply unit and to the first exhaust system, a gas detector coupled to the bypass line via a connecting line, a connecting line valve coupled to the connecting line, and a second exhaust system coupled to the connecting line. Methods include using the second exhaust system to exhaust the connecting line to thereby remove residual gas in the connecting line that may otherwise affect the accuracy of the gas detector.

公开(公告)号：US11814728B2

公开(公告)日：2023-11-14

申请号：US17236782

申请日：2021-04-21

Applicant: ASM IP Holding B.V.

Inventor： KiKang Kim ,  HakYong Kwon ,  HieChul Kim ,  SungKyu Kang ,  SeungHwan Lee ,  SungBae Kim ,  JongHyun Ahn ,  SeongRyeong Kim ,  KyuMin Kim ,  YoungMin Kim

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/56 ,  H01L21/3065

CPC classification number: C23C16/45536 ,  C23C16/56 ,  H01L21/0228 ,  H01L21/3065

Abstract: This application relates to a method of filling a gap in a three-dimensional structure over a semiconductor substrate. The method may include depositing a thin film at least on a three-dimensional structure over a substrate using at least one reaction gas activated with a first radio frequency (RF) power having a first frequency, the three dimensional structure comprising a trench and/or hole. The method may also include etching the deposited thin film using at least one etchant activated with a second RF power having a second frequency lower than the first frequency. The method may further include repeating a cycle of the depositing and the etching at least once until the trench and/or hole are filled with the thin film. According to some embodiments, a thin film having substantially free of voids and/or seams can be formed in the three-dimensional structure.

公开(公告)号：US11453946B2

公开(公告)日：2022-09-27

申请号：US16886186

申请日：2020-05-28

Applicant: ASM IP Holding B.V.

Inventor： SungBae Kim ,  HakYong Kwon ,  YoungMin Kim ,  KiKang Kim ,  SeungHwan Lee

IPC: C23C16/52 ,  C23C16/44 ,  H01L21/67 ,  C23C16/455 ,  G01M3/04

Abstract: Methods of and systems for performing leak checks of gas-phase reactor systems are disclosed. Exemplary systems include a first exhaust system coupled to a reaction chamber via a first exhaust line, a bypass line coupled to a gas supply unit and to the first exhaust system, a gas detector coupled to the bypass line via a connecting line, a connecting line valve coupled to the connecting line, and a second exhaust system coupled to the connecting line. Methods include using the second exhaust system to exhaust the connecting line to thereby remove residual gas in the connecting line that may otherwise affect the accuracy of the gas detector.

公开(公告)号：US11251040B2

公开(公告)日：2022-02-15

申请号：US16792058

申请日：2020-02-14

Applicant: ASM IP Holding B.V.

Inventor： SeungHwan Lee ,  HakYong Kwon ,  KiKang Kim ,  SungBae Kim ,  JongHyun Ahn ,  SeongRyeong Kim

IPC: H01L21/02 ,  C23C16/455 ,  H01L21/762

Abstract: A method and apparatus for depositing a material on a surface of a substrate are disclosed. The method can include a treatment step to suppress a rate of material deposition on the surface of the substrate. The method can result in higher-quality deposited material. Additionally or alternatively, the method can be used to fill a recess within the surface of the substrate with reduced or no seam formation.

公开(公告)号：US20200266057A1

公开(公告)日：2020-08-20

申请号：US16792058

申请日：2020-02-14

Applicant: ASM IP Holding B.V.

Inventor： SeungHwan Lee ,  HakYong Kwon ,  KiKang Kim ,  SungBae Kim ,  JongHyun Ahn ,  SeongRyeong Kim

IPC: H01L21/02 ,  H01L21/762 ,  C23C16/455

Abstract: A method and apparatus for depositing a material on a surface of a substrate are disclosed. The method can include a treatment step to suppress a rate of material deposition on the surface of the substrate. The method can result in higher-quality deposited material. Additionally or alternatively, the method can be used to fill a recess within the surface of the substrate with reduced or no seam formation.

公开(公告)号：US20250092525A1

公开(公告)日：2025-03-20

申请号：US18967876

申请日：2024-12-04

Applicant: ASM IP Holding B.V.

Inventor： SungBae Kim ,  HakYong Kwon ,  YoungMin Kim ,  KiKang Kim ,  SeungHwan Lee

IPC: C23C16/52 ,  C23C16/44 ,  C23C16/455 ,  G01M3/04 ,  H01L21/67

Abstract: Methods of and systems for performing leak checks of gas-phase reactor systems are disclosed. Exemplary systems include a first exhaust system coupled to a reaction chamber via a first exhaust line, a bypass line coupled to a gas supply unit and to the first exhaust system, a gas detector coupled to the bypass line via a connecting line, a connecting line valve coupled to the connecting line, and a second exhaust system coupled to the connecting line. Methods include using the second exhaust system to exhaust the connecting line to thereby remove residual gas in the connecting line that may otherwise affect the accuracy of the gas detector.

公开(公告)号：US20240006161A1

公开(公告)日：2024-01-04

申请号：US18214255

申请日：2023-06-26

Applicant: ASM IP Holding B.V.

Inventor： HaeIn Kim ,  HakJoo Lee ,  KiKang Kim ,  YongWoong Jeong ,  YoungMin Kim

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32266 ,  H01J37/32853 ,  H01J2237/334 ,  H01J2237/327

Abstract: A substrate processing method capable of preventing a damage to a reactor and a lower film includes: supplying a substrate having a pattern structure; forming a layer on the pattern structure; generating active species by applying plasma on the substrate; and selectively etching a layer on the pattern structure generated by the active species by performing isotropic etching on the layer, wherein the applying of the plasma includes: increasing a density of the active species; and increasing a mobility of the active species.

公开(公告)号：US11345999B2

公开(公告)日：2022-05-31

申请号：US16886405

申请日：2020-05-28

Applicant: ASM IP Holding B.V.

Inventor： SungBae Kim ,  HakYong Kwon ,  YoungMin Kim ,  KiKang Kim ,  SeungHwan Lee

IPC: C23C16/52 ,  C23C16/44

Abstract: Methods of and systems for performing leak checks of gas-phase reactor systems are disclosed. Exemplary systems include a first exhaust system coupled to a reaction chamber via a first exhaust line, a bypass line coupled to a gas supply unit and to the first exhaust system, a gas detector coupled to the bypass line via a connecting line, a connecting line valve coupled to the connecting line, and a second exhaust system coupled to the connecting line. Methods include using the second exhaust system to exhaust the connecting line to thereby remove residual gas in the connecting line that may otherwise affect the accuracy of the gas detector.

公开(公告)号：US12195855B2

公开(公告)日：2025-01-14

申请号：US17897307

申请日：2022-08-29

Applicant: ASM IP Holding B.V.

Inventor： SungBae Kim ,  HakYong Kwon ,  YoungMin Kim ,  KiKang Kim ,  SeungHwan Lee

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  H01L21/67 ,  G01M3/04

Abstract: Methods of and systems for performing leak checks of gas-phase reactor systems are disclosed. Exemplary systems include a first exhaust system coupled to a reaction chamber via a first exhaust line, a bypass line coupled to a gas supply unit and to the first exhaust system, a gas detector coupled to the bypass line via a connecting line, a connecting line valve coupled to the connecting line, and a second exhaust system coupled to the connecting line. Methods include using the second exhaust system to exhaust the connecting line to thereby remove residual gas in the connecting line that may otherwise affect the accuracy of the gas detector.

公开(公告)号：US20240043997A1

公开(公告)日：2024-02-08

申请号：US18378403

申请日：2023-10-10

Applicant: ASM IP Holding B.V.

Inventor： KiKang Kim ,  Hak-Yong Kwon ,  HieChul Kim ,  SungKyu Kang ,  SeungHwan Lee ,  SungBae Kim ,  JongHyun Ahn ,  SeongRyeong Kim ,  KyuMin Kim ,  YoungMin Kim

IPC: C23C16/455 ,  C23C16/56 ,  H01L21/02 ,  H01L21/3065

CPC classification number: C23C16/45536 ,  C23C16/56 ,  H01L21/0228 ,  H01L21/3065

Abstract: This application relates to a method of filling a gap in a three-dimensional structure over a semiconductor substrate. The method may include depositing a thin film at least on a three-dimensional structure over a substrate using at least one reaction gas activated with a first radio frequency (RF) power having a first frequency, the three dimensional structure comprising a trench and/or hole. The method may also include etching the deposited thin film using at least one etchant activated with a second RF power having a second frequency lower than the first frequency. The method may further include repeating a cycle of the depositing and the etching at least once until the trench and/or hole are filled with the thin film. According to some embodiments, a thin film having substantially free of voids and/or seams can be formed in the three-dimensional structure.