公开(公告)号：US20220403522A1

公开(公告)日：2022-12-22

申请号：US17897307

申请日：2022-08-29

Applicant: ASM IP Holding B.V.

Inventor： SungBae Kim ,  HakYong Kwon ,  YoungMin Kim ,  KiKang Kim ,  SeungHwan Lee

IPC: C23C16/52 ,  C23C16/44 ,  H01L21/67 ,  C23C16/455

Abstract: Methods of and systems for performing leak checks of gas-phase reactor systems are disclosed. Exemplary systems include a first exhaust system coupled to a reaction chamber via a first exhaust line, a bypass line coupled to a gas supply unit and to the first exhaust system, a gas detector coupled to the bypass line via a connecting line, a connecting line valve coupled to the connecting line, and a second exhaust system coupled to the connecting line. Methods include using the second exhaust system to exhaust the connecting line to thereby remove residual gas in the connecting line that may otherwise affect the accuracy of the gas detector.

公开(公告)号：US11814728B2

公开(公告)日：2023-11-14

申请号：US17236782

申请日：2021-04-21

Applicant: ASM IP Holding B.V.

Inventor： KiKang Kim ,  HakYong Kwon ,  HieChul Kim ,  SungKyu Kang ,  SeungHwan Lee ,  SungBae Kim ,  JongHyun Ahn ,  SeongRyeong Kim ,  KyuMin Kim ,  YoungMin Kim

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/56 ,  H01L21/3065

CPC classification number: C23C16/45536 ,  C23C16/56 ,  H01L21/0228 ,  H01L21/3065

Abstract: This application relates to a method of filling a gap in a three-dimensional structure over a semiconductor substrate. The method may include depositing a thin film at least on a three-dimensional structure over a substrate using at least one reaction gas activated with a first radio frequency (RF) power having a first frequency, the three dimensional structure comprising a trench and/or hole. The method may also include etching the deposited thin film using at least one etchant activated with a second RF power having a second frequency lower than the first frequency. The method may further include repeating a cycle of the depositing and the etching at least once until the trench and/or hole are filled with the thin film. According to some embodiments, a thin film having substantially free of voids and/or seams can be formed in the three-dimensional structure.

公开(公告)号：US11453946B2

公开(公告)日：2022-09-27

申请号：US16886186

申请日：2020-05-28

Applicant: ASM IP Holding B.V.

Inventor： SungBae Kim ,  HakYong Kwon ,  YoungMin Kim ,  KiKang Kim ,  SeungHwan Lee

IPC: C23C16/52 ,  C23C16/44 ,  H01L21/67 ,  C23C16/455 ,  G01M3/04

Abstract: Methods of and systems for performing leak checks of gas-phase reactor systems are disclosed. Exemplary systems include a first exhaust system coupled to a reaction chamber via a first exhaust line, a bypass line coupled to a gas supply unit and to the first exhaust system, a gas detector coupled to the bypass line via a connecting line, a connecting line valve coupled to the connecting line, and a second exhaust system coupled to the connecting line. Methods include using the second exhaust system to exhaust the connecting line to thereby remove residual gas in the connecting line that may otherwise affect the accuracy of the gas detector.

公开(公告)号：US20220259740A1

公开(公告)日：2022-08-18

申请号：US17670127

申请日：2022-02-11

Applicant: ASM IP Holding B.V.

Inventor： SungBae Kim

IPC: C23C16/52 ,  C23C16/455 ,  C23C16/44

Abstract: A substrate processing device capable of detecting a gas leakage includes at least one reactor; a gas supply unit configured to supply a gas to the reactor; and a detection unit connected to the gas supply unit, wherein the detection unit is configured to detect a gas flow in the gas supply unit.

公开(公告)号：US20240377145A1

公开(公告)日：2024-11-14

申请号：US18654213

申请日：2024-05-03

Applicant: ASM IP Holding B.V.

Inventor： SungBae Kim ,  KwangMan Ko ,  Juill Lee

IPC: F28F3/12 ,  H01L21/67

Abstract: Disclosed is a heat shielding device which shields heat from a chamber wall to the outside by creating one or more gas insulating layers around a chamber heated to a high temperature, thereby reducing heat loss, power consumed when heating the chamber to a certain temperature, minimizing the effect of heat to another chamber and reducing safety problems such as burning of an operator.

公开(公告)号：US11499226B2

公开(公告)日：2022-11-15

申请号：US16671847

申请日：2019-11-01

Applicant: ASM IP Holding B.V.

Inventor： SeungHwan Lee ,  HakYong Kwon ,  JongSu Kim ,  SungBae Kim ,  JuHyuk Park

IPC: C23C16/455 ,  H01J37/32 ,  H01L21/67 ,  H01L21/673 ,  C23C16/458

Abstract: A substrate processing device capable of preventing deformation of a substrate during a process includes a substrate supporting unit having a contact surface that comes into contact with an edge of a substrate to be processed, wherein the substrate supporting unit includes a protruding (e.g. embossed) structure protruding from a base to support deformation from the inside of the edge of the substrate to be processed.

公开(公告)号：US11251040B2

公开(公告)日：2022-02-15

申请号：US16792058

申请日：2020-02-14

Applicant: ASM IP Holding B.V.

Inventor： SeungHwan Lee ,  HakYong Kwon ,  KiKang Kim ,  SungBae Kim ,  JongHyun Ahn ,  SeongRyeong Kim

IPC: H01L21/02 ,  C23C16/455 ,  H01L21/762

Abstract: A method and apparatus for depositing a material on a surface of a substrate are disclosed. The method can include a treatment step to suppress a rate of material deposition on the surface of the substrate. The method can result in higher-quality deposited material. Additionally or alternatively, the method can be used to fill a recess within the surface of the substrate with reduced or no seam formation.

公开(公告)号：US20200266057A1

公开(公告)日：2020-08-20

申请号：US16792058

申请日：2020-02-14

Applicant: ASM IP Holding B.V.

Inventor： SeungHwan Lee ,  HakYong Kwon ,  KiKang Kim ,  SungBae Kim ,  JongHyun Ahn ,  SeongRyeong Kim

IPC: H01L21/02 ,  H01L21/762 ,  C23C16/455

Abstract: A method and apparatus for depositing a material on a surface of a substrate are disclosed. The method can include a treatment step to suppress a rate of material deposition on the surface of the substrate. The method can result in higher-quality deposited material. Additionally or alternatively, the method can be used to fill a recess within the surface of the substrate with reduced or no seam formation.

公开(公告)号：US12195855B2

公开(公告)日：2025-01-14

申请号：US17897307

申请日：2022-08-29

Applicant: ASM IP Holding B.V.

Inventor： SungBae Kim ,  HakYong Kwon ,  YoungMin Kim ,  KiKang Kim ,  SeungHwan Lee

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  H01L21/67 ,  G01M3/04

Abstract: Methods of and systems for performing leak checks of gas-phase reactor systems are disclosed. Exemplary systems include a first exhaust system coupled to a reaction chamber via a first exhaust line, a bypass line coupled to a gas supply unit and to the first exhaust system, a gas detector coupled to the bypass line via a connecting line, a connecting line valve coupled to the connecting line, and a second exhaust system coupled to the connecting line. Methods include using the second exhaust system to exhaust the connecting line to thereby remove residual gas in the connecting line that may otherwise affect the accuracy of the gas detector.

公开(公告)号：US20240186139A1

公开(公告)日：2024-06-06

申请号：US18524307

申请日：2023-11-30

Applicant: ASM IP Holding B.V.

Inventor： Sungdae Woo ,  Kwangman Ko ,  SungBae Kim ,  JuSeok Jeon

IPC: H01L21/02 ,  C23C16/24 ,  C23C16/26 ,  C23C16/34 ,  C23C16/505 ,  C23C16/56 ,  H01J37/32

CPC classification number: H01L21/0234 ,  C23C16/24 ,  C23C16/26 ,  C23C16/34 ,  C23C16/505 ,  C23C16/56 ,  H01J37/32449 ,  H01L21/02186 ,  H01L21/02274 ,  H01L21/0228 ,  H01J37/32082 ,  H01J2237/332

Abstract: Provided is a method of forming a TiN spacer film on the patterned structure comprising a step of loading a substrate onto a chamber, a step of forming a film on the substrate; a step of post treatment to the film; and a step of unloading the substrate, wherein the step of forming the film on the substrate comprises supplying a first gas and a second gas sequentially and alternately, wherein the step of post treating to the film comprises supplying treatment gas to the substrate, wherein the second gas and the treatment gas are activated by RF power.