公开(公告)号：US11814728B2

公开(公告)日：2023-11-14

申请号：US17236782

申请日：2021-04-21

Applicant: ASM IP Holding B.V.

Inventor： KiKang Kim ,  HakYong Kwon ,  HieChul Kim ,  SungKyu Kang ,  SeungHwan Lee ,  SungBae Kim ,  JongHyun Ahn ,  SeongRyeong Kim ,  KyuMin Kim ,  YoungMin Kim

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/56 ,  H01L21/3065

CPC classification number: C23C16/45536 ,  C23C16/56 ,  H01L21/0228 ,  H01L21/3065

Abstract: This application relates to a method of filling a gap in a three-dimensional structure over a semiconductor substrate. The method may include depositing a thin film at least on a three-dimensional structure over a substrate using at least one reaction gas activated with a first radio frequency (RF) power having a first frequency, the three dimensional structure comprising a trench and/or hole. The method may also include etching the deposited thin film using at least one etchant activated with a second RF power having a second frequency lower than the first frequency. The method may further include repeating a cycle of the depositing and the etching at least once until the trench and/or hole are filled with the thin film. According to some embodiments, a thin film having substantially free of voids and/or seams can be formed in the three-dimensional structure.

公开(公告)号：US20240043997A1

公开(公告)日：2024-02-08

申请号：US18378403

申请日：2023-10-10

Applicant: ASM IP Holding B.V.

Inventor： KiKang Kim ,  Hak-Yong Kwon ,  HieChul Kim ,  SungKyu Kang ,  SeungHwan Lee ,  SungBae Kim ,  JongHyun Ahn ,  SeongRyeong Kim ,  KyuMin Kim ,  YoungMin Kim

IPC: C23C16/455 ,  C23C16/56 ,  H01L21/02 ,  H01L21/3065

CPC classification number: C23C16/45536 ,  C23C16/56 ,  H01L21/0228 ,  H01L21/3065

Abstract: This application relates to a method of filling a gap in a three-dimensional structure over a semiconductor substrate. The method may include depositing a thin film at least on a three-dimensional structure over a substrate using at least one reaction gas activated with a first radio frequency (RF) power having a first frequency, the three dimensional structure comprising a trench and/or hole. The method may also include etching the deposited thin film using at least one etchant activated with a second RF power having a second frequency lower than the first frequency. The method may further include repeating a cycle of the depositing and the etching at least once until the trench and/or hole are filled with the thin film. According to some embodiments, a thin film having substantially free of voids and/or seams can be formed in the three-dimensional structure.

公开(公告)号：US20230070340A1

公开(公告)日：2023-03-09

申请号：US17896340

申请日：2022-08-26

Applicant: ASM IP Holding B.V.

Inventor： YongWoong Jeong ,  HakJoo Lee ,  KiKang Kim ,  JongHyun Ahn ,  YoungMin Kim ,  YoungSim Kim

IPC: C23C16/44 ,  C23C16/455

Abstract: Provided is a method for seasoning a reactor in which a dry cleaning step and a first seasoning step are carried out at the first temperature, then the temperature is raised to a second temperature. The method also comprises a second seasoning step and a substrate processing step are carried out at the second temperature. The seasoning step of the disclosure suppresses dry cleaning byproducts from evaporating, spreading and re-spreading in a reactor. Thus, deterioration of the film quality deposited on a substrate is prevented, extending the wet etch cycle of the reactor and improving the uptime and the efficiency of the reactor.

公开(公告)号：US11251040B2

公开(公告)日：2022-02-15

申请号：US16792058

申请日：2020-02-14

Applicant: ASM IP Holding B.V.

Inventor： SeungHwan Lee ,  HakYong Kwon ,  KiKang Kim ,  SungBae Kim ,  JongHyun Ahn ,  SeongRyeong Kim

IPC: H01L21/02 ,  C23C16/455 ,  H01L21/762

Abstract: A method and apparatus for depositing a material on a surface of a substrate are disclosed. The method can include a treatment step to suppress a rate of material deposition on the surface of the substrate. The method can result in higher-quality deposited material. Additionally or alternatively, the method can be used to fill a recess within the surface of the substrate with reduced or no seam formation.

公开(公告)号：US20200266057A1

公开(公告)日：2020-08-20

申请号：US16792058

申请日：2020-02-14

Applicant: ASM IP Holding B.V.

Inventor： SeungHwan Lee ,  HakYong Kwon ,  KiKang Kim ,  SungBae Kim ,  JongHyun Ahn ,  SeongRyeong Kim

IPC: H01L21/02 ,  H01L21/762 ,  C23C16/455

Abstract: A method and apparatus for depositing a material on a surface of a substrate are disclosed. The method can include a treatment step to suppress a rate of material deposition on the surface of the substrate. The method can result in higher-quality deposited material. Additionally or alternatively, the method can be used to fill a recess within the surface of the substrate with reduced or no seam formation.