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公开(公告)号：US11728224B2
公开(公告)日：2023-08-15
申请号：US17371380
申请日：2021-07-09
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan Van Leest , Anagnostis Tsiatmas , Paul Christiaan Hinnen , Elliott Gerard McNamara , Alok Verma , Thomas Theeuwes , Hugo Augustinus Joseph Cramer
CPC classification number: H01L22/12 , G01N21/9501 , G03F7/70633 , G03F7/70683 , G03F9/7003
Abstract: A method of determining a parameter of a patterning process, the method including: obtaining a detected representation of radiation redirected by a structure having geometric symmetry at a nominal physical configuration, wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the structure; and determining, by a hardware computer system, a value of the patterning process parameter based on optical characteristic values from an asymmetric optical characteristic distribution portion of the detected radiation representation with higher weight than another portion of the detected radiation representation, the asymmetric optical characteristic distribution arising from a different physical configuration of the structure than the nominal physical configuration.
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公开(公告)号：US10811323B2
公开(公告)日：2020-10-20
申请号：US15445612
申请日：2017-02-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan Van Leest , Anagnostis Tsiatmas , Paul Christiaan Hinnen , Elliott Gerard McNamara , Alok Verma , Thomas Theeuwes , Hugo Augustinus Joseph Cramer , Maria Isabel De La Fuente Valentin , Koen Van Witteveen , Martijn Maria Zaal , Shu-jin Wang
Abstract: A metrology target includes: a first structure arranged to be created by a first patterning process; and a second structure arranged to be created by a second patterning process, wherein the first structure and/or second structure is not used to create a functional aspect of a device pattern, and wherein the first and second structures together form one or more instances of a unit cell, the unit cell having geometric symmetry at a nominal physical configuration and wherein the unit cell has a feature that causes, at a different physical configuration than the nominal physical configuration due to a relative shift in pattern placement in the first patterning process, the second patterning process and/or another patterning process, an asymmetry in the unit cell.
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Patent Agency Ranking
公开(公告)号：US10453758B2
公开(公告)日：2019-10-22
申请号：US15445522
申请日：2017-02-28
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan Van Leest , Anagnostis Tsiatmas , Paul Christiaan Hinnen , Elliott Gerard McNamara , Alok Verma , Thomas Theeuwes , Hugo Augustinus Joseph Cramer
Abstract: A method of determining a parameter of a patterning process, the method including: obtaining a detected representation of radiation redirected by a structure having geometric symmetry at a nominal physical configuration, wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the structure; and determining, by a hardware computer system, a value of the patterning process parameter based on optical characteristic values from an asymmetric optical characteristic distribution portion of the detected radiation representation with higher weight than another portion of the detected radiation representation, the asymmetric optical characteristic distribution arising from a different physical configuration of the structure than the nominal physical configuration.
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公开(公告)号：US11784098B2
公开(公告)日：2023-10-10
申请号：US17408043
申请日：2021-08-20
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan Van Leest , Anagnostis Tsiatmas , Paul Christiaan Hinnen , Elliott Gerard McNamara , Alok Verma , Thomas Theeuwes , Hugo Augustinus Joseph Cramer
CPC classification number: H01L22/12 , G01N21/9501 , G03F7/70633 , G03F7/70683 , G03F9/7003
Abstract: A method of determining overlay of a patterning process, the method including: obtaining a detected representation of radiation redirected by one or more physical instances of a unit cell, wherein the unit cell has geometric symmetry at a nominal value of overlay and wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the one or more physical instances of the unit cell; and determining, from optical characteristic values from the detected radiation representation, a value of a first overlay for the unit cell separately from a second overlay for the unit cell that is also obtainable from the same optical characteristic values, wherein the first overlay is in a different direction than the second overlay or between a different combination of parts of the unit cell than the second overlay.
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公开(公告)号：US11101184B2
公开(公告)日：2021-08-24
申请号：US16572751
申请日：2019-09-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Adriaan Johan Van Leest , Anagnostis Tsiatmas , Paul Christiaan Hinnen , Elliott Gerard McNamara , Alok Verma , Thomas Theeuwes , Hugo Augustinus Joseph Cramer
Abstract: A method of determining a parameter of a patterning process, the method including: obtaining a detected representation of radiation redirected by a structure having geometric symmetry at a nominal physical configuration, wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the structure; and determining, by a hardware computer system, a value of the patterning process parameter based on optical characteristic values from an asymmetric optical characteristic distribution portion of the detected radiation representation with higher weight than another portion of the detected radiation representation, the asymmetric optical characteristic distribution arising from a different physical configuration of the structure than the nominal physical configuration.
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公开(公告)号：US10369752B2
公开(公告)日：2019-08-06
申请号：US15138903
申请日：2016-04-26
Applicant: ASML Netherlands B.V.
Inventor： Seyed Iman Mossavat , Adriaan Johan Van Leest
IPC: G06F7/66 , B29C67/00 , G03F7/20 , G05B19/4099 , B29C64/386 , B33Y50/02
Abstract: Disclosed are a method, computer program and associated apparatuses for metrology. The method includes acquiring inspection data comprising a plurality of inspection data elements, each inspection data element having been obtained by inspection of a corresponding target structure formed using a lithographic process; and performing an unsupervised cluster analysis on said inspection data, thereby partitioning said inspection data into a plurality of clusters in accordance with a metric. In an embodiment, a cluster representative can be identified for each cluster. The cluster representative may be reconstructed and the reconstruction used to approximate the other members of the cluster.
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公开(公告)号：US09760018B2
公开(公告)日：2017-09-12
申请号：US14906898
申请日：2014-08-05
Applicant: ASML Netherlands B.V.
Inventor： Seyed Iman Mossavat , Hugo Augustinus Joseph Cramer , Willem Jan Grootjans , Adriaan Johan Van Leest
CPC classification number: G03F7/705 , G01N21/956 , G01N21/95607 , G03F7/70625 , G03F9/7092
Abstract: Methods and inspection apparatus and computer program products for assessing a quality of reconstruction of a value of a parameter of interest of a structure, which may be applied for example in metrology of microscopic structures. It is important the reconstruction provides a value of a parameter of interest (e.g. a CD) of the structure which is accurate as the reconstructed value is used to monitor and/or control a lithographic process. This is a way of assessing a quality of reconstruction (803) of a value of a parameter of interest of a structure which does not require the use of a scanning electron microscope, by predicting (804) values of the parameter of interest of structures using reconstructed values of parameters of structures, and by comparing (805) the predicted values of the parameter of interest and the reconstructed values of the parameter of interest.
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