公开(公告)号：US11710668B2

公开(公告)日：2023-07-25

申请号：US17072391

申请日：2020-10-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Adriaan Johan Van Leest ,  Anagnostis Tsiatmas ,  Paul Christiaan Hinnen ,  Elliott Gerard McNamara ,  Alok Verma ,  Thomas Theeuwes ,  Hugo Augustinus Joseph Cramer ,  Maria Isabel De La Fuente Valentin ,  Koen Van Witteveen ,  Martijn Maria Zaal ,  Shu-jin Wang

IPC: H01L21/66 ,  G03F7/20 ,  G03F9/00 ,  G01N21/95 ,  G03F7/00

CPC classification number: H01L22/12 ,  G01N21/9501 ,  G03F7/70633 ,  G03F7/70683 ,  G03F9/7003

Abstract: A metrology target includes: a first structure arranged to be created by a first patterning process; and a second structure arranged to be created by a second patterning process, wherein the first structure and/or second structure is not used to create a functional aspect of a device pattern, and wherein the first and second structures together form one or more instances of a unit cell, the unit cell having geometric symmetry at a nominal physical configuration and wherein the unit cell has a feature that causes, at a different physical configuration than the nominal physical configuration due to a relative shift in pattern placement in the first patterning process, the second patterning process and/or another patterning process, an asymmetry in the unit cell.

公开(公告)号：US10955744B2

公开(公告)日：2021-03-23

申请号：US16100269

申请日：2018-08-10

Applicant: ASML NETHERLANDS B.V.

Inventor： Koen Van Witteveen ,  Wei-Chun Wang ,  Paul Jonathan Turner ,  Elliott Gerard McNamara ,  Giacomo Miceli

IPC: G03F7/20 ,  G03F1/36

Abstract: A method of determining a parameter of a pattern transfer process and device manufacturing methods are disclosed. In one arrangement, a method includes obtaining a detected representation of radiation redirected by a structure. The structure is a structure formed by applying a pattern processing to a pattern transferred to an earlier formed structure by a pattern transfer process. The pattern processing is such as to remove one or more selected regions in a horizontal plane of the earlier formed structure to form a pattern in the horizontal plane. The pattern is defined by a unit cell that is mirror symmetric with respect to an axis of mirror symmetry. An asymmetry in the detected representation is determined. The determined asymmetry in the detected representation is used to determine a parameter of the pattern transfer process.

公开(公告)号：US10811323B2

公开(公告)日：2020-10-20

申请号：US15445612

申请日：2017-02-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Adriaan Johan Van Leest ,  Anagnostis Tsiatmas ,  Paul Christiaan Hinnen ,  Elliott Gerard McNamara ,  Alok Verma ,  Thomas Theeuwes ,  Hugo Augustinus Joseph Cramer ,  Maria Isabel De La Fuente Valentin ,  Koen Van Witteveen ,  Martijn Maria Zaal ,  Shu-jin Wang

IPC: H01L21/66 ,  G03F7/20 ,  G03F9/00 ,  G01N21/95

Abstract: A metrology target includes: a first structure arranged to be created by a first patterning process; and a second structure arranged to be created by a second patterning process, wherein the first structure and/or second structure is not used to create a functional aspect of a device pattern, and wherein the first and second structures together form one or more instances of a unit cell, the unit cell having geometric symmetry at a nominal physical configuration and wherein the unit cell has a feature that causes, at a different physical configuration than the nominal physical configuration due to a relative shift in pattern placement in the first patterning process, the second patterning process and/or another patterning process, an asymmetry in the unit cell.

公开(公告)号：US20190064653A1

公开(公告)日：2019-02-28

申请号：US16100269

申请日：2018-08-10

Applicant: ASML Netherlands B.V.

Inventor： Koen Van Witteveen ,  Wei-Chun Wang ,  Paul Jonathan Turner ,  Elliott Gerard Mc Namara ,  Giacomo Miceli

IPC: G03F1/36 ,  G03F7/20

Abstract: A method of determining a parameter of a pattern transfer process and device manufacturing methods are disclosed. In one arrangement, a method includes obtaining a detected representation of radiation redirected by a structure. The structure is a structure formed by applying a pattern processing to a pattern transferred to an earlier formed structure by a pattern transfer process. The pattern processing is such as to remove one or more selected regions in a horizontal plane of the earlier formed structure to form a pattern in the horizontal plane. The pattern is defined by a unit cell that is mirror symmetric with respect to an axis of mirror symmetry. An asymmetry in the detected representation is determined. The determined asymmetry in the detected representation is used to determine a parameter of the pattern transfer process.