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公开(公告)号:US11300888B2
公开(公告)日:2022-04-12
申请号:US16485499
申请日:2018-02-07
Applicant: ASML NETHERLANDS B.V.
Inventor: Richard Johannes Franciscus Van Haren , Leon Paul Van Dijk , Ilya Malakhovsky , Ronald Henricus Johannes Otten
Abstract: A method and control system for determining stress in a substrate. The method includes determining a measured position difference between a measured position of at least one first feature and a measured position of at least one second feature which have been applied on a substrate, and determining local stress in the substrate from the measured position difference.
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公开(公告)号:US11294294B2
公开(公告)日:2022-04-05
申请号:US16966536
申请日:2019-02-06
Applicant: ASML NETHERLANDS B.V.
Inventor: Richard Johannes Franciscus Van Haren , Leon Paul Van Dijk , Orion Jonathan Pierre Mouraille , Anne Marie Pastol
Abstract: Methods and apparatuses for determining a position of an alignment mark applied to a region of a first layer on a substrate using a lithographic process by: obtaining an expected position of the alignment mark; obtaining a geometrical deformation of the region due to a control action correcting the lithographic process; obtaining a translation of the alignment mark due to the geometrical deformation; and determining the position of the alignment mark based on the expected position and the translation.
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公开(公告)号:US11126093B2
公开(公告)日:2021-09-21
申请号:US16099452
申请日:2017-05-17
Applicant: ASML NETHERLANDS B.V.
Inventor: Richard Johannes Franciscus Van Haren , Reiner Maria Jungblut , Leon Paul Van Dijk , Willem Seine Christian Roelofs , Wim Tjibbo Tel , Stefan Hunsche , Maurits Van Der Schaar
Abstract: A method is proposed involving obtaining data regarding an expected focus offset during a patterning process due to topography of a region of a substrate surface. A modification of, e.g., a transmission or reflection of a region of a patterning device associated with the region of the substrate surface is determined based on the data. Using the patterning device modified according the determined modification during the patterning process mitigates an impact of the substrate topography on a parameter of the patterning process.
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