公开(公告)号：US11187998B2

公开(公告)日：2021-11-30

申请号：US16761608

申请日：2018-10-24

Applicant: ASML NETHERLANDS B.V.

Inventor： Abraham Alexander Soethoudt ,  Thomas Poiesz

IPC: G03F7/20 ,  H01L21/683

Abstract: A substrate holder for use in a lithographic apparatus and configured to support a substrate, the substrate holder including a main body having a main body surface, a plurality of main burls projecting from the main body surface, wherein each main burl has a distal end surface configured to support the substrate, a first seal member projecting from the main body surface and having an upper surface, the first seal member surrounding the plurality of main burls and configured to restrict the passage of liquid between the substrate and the main body surface radially inward past the first seal member; and a plurality of minor burls projecting from the upper surface of the first seal member, wherein each minor burl has a distal end surface configured to support the substrate.

公开(公告)号：US11098759B2

公开(公告)日：2021-08-24

申请号：US16735131

申请日：2020-01-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Siegfried Alexander Tromp ,  Antonie Hendrik Verweij ,  Abraham Alexander Soethoudt ,  Jan Pieter Van De Poel ,  Mark Constant Johannes Baggen

IPC: H01L21/683 ,  G03F7/20 ,  F16C32/06 ,  F16C29/02

Abstract: A support table for a lithographic apparatus, a method of loading a substrate, a lithographic apparatus and a method for manufacturing a device using a lithographic apparatus. In one arrangement, a support table is configured to support a substrate. The support table has a base surface. The base surface faces a surface of the substrate when the substrate is supported by the support table. One or more gas cushion members are provided above the base surface. Each of the gas cushion members includes a recess. The recess is shaped and configured such that a lowering of the substrate into a position on the support table at which the substrate is supported by the support table causes a localised build-up of pressure within the recess. The localized build-up of pressure provides a localised gas cushioning effect during the lowering of the substrate.

公开(公告)号：US20210072649A1

公开(公告)日：2021-03-11

申请号：US16952371

申请日：2020-11-19

Applicant: ASML Netherlands B.V.

Inventor： Thomas Poiesz ,  Bert Dirk Scholten ,  Dirk Willem Harberts ,  Lucas Henricus Johannes Stevens ,  Laura Maria Fernandez Diaz ,  Johannes Adrianus Cornelis M Pijnenburg ,  Abraham Alexander Soethoudt ,  Wilhelmus Jacobus Johannes Welters ,  Jimmy Matheus Wilhelmus Van De Winkel

IPC: G03F7/20

Abstract: A substrate table for an immersion system having a projection system arranged to project an image onto a substrate and a liquid confinement system configured to confine an immersion liquid to a space between the projection system and the substrate, the substrate table including: a substrate holder configured to hold a substrate; and a current control device arranged to reduce an electric current flowing between the substrate and the substrate holder while the immersion liquid is confined to the space.

公开(公告)号：US10599053B2

公开(公告)日：2020-03-24

申请号：US16511867

申请日：2019-07-15

Applicant: ASML NETHERLANDS B.V.

Inventor： Abraham Alexander Soethoudt ,  Thomas Poiesz

IPC: G03B27/58 ,  G03F7/20 ,  B01D53/34 ,  B01D53/56 ,  B01D53/79 ,  B05B13/02 ,  B05B13/04 ,  F23J15/00 ,  B05B15/656 ,  B05B15/68 ,  B05B13/06

Abstract: A lithographic apparatus includes a support table and a gas extraction system. The gas extraction system is configured to extract gas from a gap between the base surface of the support table and a substrate through at least one gas extraction opening when the substrate is being lowered onto the support table. The lithographic apparatus is configured such that gas is extracted from the gap at a first loading flow rate when the distance between the substrate and the support plane is greater than a threshold distance and gas is extracted from the gap at a second loading flow rate when the distance between the substrate and the support plane is less than the threshold distance, wherein the second loading flow rate is lower than the first loading flow rate.

公开(公告)号：US10527092B2

公开(公告)日：2020-01-07

申请号：US15513086

申请日：2015-10-07

Applicant: ASML NETHERLANDS B.V.

Inventor： Siegfried Alexander Tromp ,  Antonie Hendrik Verweij ,  Abraham Alexander Soethoudt ,  Jan Pieter Van De Poel ,  Mark Constant Johannes Baggen

IPC: F16C32/06 ,  G03F7/20 ,  F16C29/02 ,  H01L21/683

Abstract: A support table, a method of loading a substrate, a lithographic apparatus and a method of manufacturing a device using a lithographic apparatus are disclosed. In one arrangement, a support table is configured to support a substrate. The support table has a base surface. The base surface faces a bottom surface of the substrate when the substrate is supported by the support table. One or more gas cushion members are provided above the base surface. Each of the gas cushion members includes a recess. The recess is shaped and configured such that a lowering of the substrate into a position on the support table at which the substrate is supported by the support table causes a localized build-up of pressure within the recess. The localized build-up of pressure provides a localized gas cushioning effect during the lowering of the substrate.