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公开(公告)号:US20180196363A1
公开(公告)日:2018-07-12
申请号:US15742028
申请日:2016-07-07
Applicant: ASML NETHERLANDS B.V.
CPC classification number: G03F9/7046 , G03F7/70258 , G03F7/705 , G03F9/7069 , G03F9/7073 , G03F9/7088
Abstract: A lithographic apparatus is described, the apparatus comprising: an illumination system configured to condition a radiation beam; a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table constructed to hold a substrate; and a projection system configured to project the patterned radiation beam onto a target portion of the substrate, wherein the apparatus further comprises an alignment system configured to perform, for one or more alignment marks that are present on the substrate: —a plurality of alignment mark position measurements for the alignment mark by applying a respective plurality of different alignment measurement parameters, thereby obtaining a plurality of measured alignment mark positions for the alignment mark; the apparatus further comprising a processing unit, the processing unit being configured to: —determine, for each of the plurality of alignment mark position measurements, a positional deviation as a difference between an expected alignment mark position and a measured alignment mark position, the measured alignment mark position being determined based on the respective alignment mark position measurement; —define a set of functions as possible causes for the positional deviations, the set of functions including a substrate deformation function representing a deformation of the substrate, and at least one mark deformation function representing a deformation of the one or more alignment marks; —generating a matrix equation PD=M*F whereby a vector PD comprising the positional deviations is set equal to a weighted combination, represented by a weight coefficient matrix M, of a vector F comprising the substrate deformation function and the at least one mark deformation function, whereby weight coefficients associated with the at least one mark deformation function vary depending on applied alignment measurement; —determining a value for the weight coefficients of the matrix M; —determining an inverse or pseudo-inverse matrix of the matrix M, thereby obtaining a value for the substrate deformation function as a weighted combination of the positional deviations. —applying the value of the substrate deformation function to perform an alignment of the target portion with the patterned radiation beam.
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公开(公告)号:US20230221655A1
公开(公告)日:2023-07-13
申请号:US18001869
申请日:2021-05-18
Applicant: ASML Netherlands B.V.
Inventor: Edo Maria HULSEBOS
CPC classification number: G03F7/70525 , G03F7/705 , G03F9/7003
Abstract: Disclosed is a method for modeling measurement data over a substrate area and associated apparatus. The method comprises obtaining measurement data relating to a first layout; modeling a second model based on said first layout; evaluating the second model on a second layout, the second layout being more dense than said first layout; and fitting a first model to this second model according to the second layout.
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公开(公告)号:US20230168595A1
公开(公告)日:2023-06-01
申请号:US17922593
申请日:2021-05-11
Applicant: ASML NETHERLANDS B.V.
IPC: G03F9/00
CPC classification number: G03F9/7092 , G03F9/7076 , G03F7/70625
Abstract: A method of, and associated apparatuses for, performing a position measurement on an alignment mark including at least a first periodic structure having a direction of periodicity along a first direction. The method includes obtaining signal data relating to the position measurement and fitting the signal data to determine a position value. The fitting uses one of a modulation fit or a background envelope periodic fit.
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公开(公告)号:US20210149316A1
公开(公告)日:2021-05-20
申请号:US16623912
申请日:2018-05-28
Applicant: ASML NETHERLANDS B.V.
Inventor: Edo Maria HULSEBOS , Patricius Aloysius Jacobus TINNEMANS , Franciscus Godefridus Casper BIJNEN
Abstract: A method for determining substrate deformation includes obtaining first measurement data associated with mark positions, from measurements of a plurality of substrates; obtaining second measurement data associated with mark positions, from measurements of the plurality of substrates; determining a mapping between the first measurement data and the second measurement data; and decomposing the mapping, by calculating an eigenvalue decomposition for the mapping, to separately determine a first deformation (e.g. mark deformation) that scales differently from a second deformation (e.g. substrate deformation) in the mapping between the data. The steps of determining a mapping and decomposing the mapping may be performed together using non-linear optimization.
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公开(公告)号:US20200272061A1
公开(公告)日:2020-08-27
申请号:US16650520
申请日:2018-09-04
Applicant: ASML NETHERLANDS B.V.
Inventor: Patricius Aloysius Jacobus TINNEMANS , Edo Maria HULSEBOS , Henricus Johannes Lambertus MEGENS , Ahmet Koray ERDAMAR , Loek Johannes Petrus VERHEES , Willem Seine Christian ROELOFS , Wendy Johanna Martina VAN DE VEN , Hadi YAGUBIZADE , Hakki Ergün CEKLI , Ralph BRINKHOF , Tran Thanh Thuy VU , Maikel Robert GOOSEN , Maaike VAN T WESTEINDE , Weitian KOU , Manouk RIJPSTRA , Matthijs COX , Franciscus Godefridus Casper BIJNEN
IPC: G03F7/20
Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.
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公开(公告)号:US20190265598A1
公开(公告)日:2019-08-29
申请号:US16408605
申请日:2019-05-10
Applicant: ASML NETHERLANDS B.V.
Inventor: Edo Maria HULSEBOS , Patricius Aloysius Jacobus TINNEMANS , Ralp BRINKHOF , Pieter Jacob HERES , Jorn Kjeld LUCAS , Loek Johannes Petrus VERHEES , Ingrid Margaretha Ardina VAN DONKELAAR , Franciscus Godefridus Casper BIJNEN
Abstract: In a method of controlling a lithographic apparatus, historical performance measurements are used to calculate a process model relating to a lithographic process. Current positions of a plurality of alignment marks provided on a current substrate are measured and used to calculate a substrate model relating to a current substrate. Additionally, historical position measurements obtained at the time of processing the prior substrates are used with the historical performance measurements to calculate a model mapping. The model mapping is applied to modify the substrate model. The lithographic apparatus is controlled using the process model and the modified substrate model together. Overlay performance is improved by avoiding over- or under-correction of correlated components of the process model and the substrate model. The model mapping may be a subspace mapping, and dimensionality of the model mapping may be reduced, before it is used.
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