公开(公告)号：US20240319614A1

公开(公告)日：2024-09-26

申请号：US18731762

申请日：2024-06-03

申请人： Carl Zeiss SMT GmbH

发明人： Matthias Manger ,  Regina Christ

IPC分类号： G03F7/00

CPC分类号： G03F7/70516 ,  G03F7/70258 ,  G03F7/70504 ,  G03F7/70508

摘要： A method for calibrating a manipulable optical module for a microlithographic projection exposure apparatus, which comprises at least one manipulation element for setting an at least one-dimensional local variation profile of an optical property of the optical module is provided. The method comprises: applying a temporally varying excitation signal to the at least one manipulation element; determining a raw measurement data set via a measurement device measuring the respective local variation profile resulting at different times during the variation of the excitation signal; estimating a temporally varying scaling, caused by the temporal variation of the excitation signal, in the variation profiles of the raw measurement data set; determining a full effect profile of the optical property by fitting the temporally varying scaling to the variation profiles of the raw measurement data set; and determining calibration data of the manipulable optical module on the basis of the full effect profile.

公开(公告)号：US11880145B2

公开(公告)日：2024-01-23

申请号：US17973645

申请日：2022-10-26

申请人： Carl Zeiss SMT GmbH

发明人： Sven Martin ,  Oliver Jaeckel

IPC分类号： G03F1/84 ,  G03F7/00

CPC分类号： G03F7/7085 ,  G03F1/84 ,  G03F7/70258 ,  G03F7/706

摘要： A method for measuring a substrate for semiconductor lithography using a measuring device, wherein the measuring device comprises a recording device for capturing at least a partial region of the substrate and, wherein the distance between the substrate and an imaging optical unit of the recording device is varied while the partial region is captured by the recording device.

公开(公告)号：US20230400772A1

公开(公告)日：2023-12-14

申请号：US18332192

申请日：2023-06-09

申请人： Carl Zeiss SMT GmbH

发明人： Eugen Doetzel ,  Johannes Kruis ,  Benjamin Sigel ,  Dietmar Duerr ,  Tobias Hegele ,  Alexander Ostendorf ,  Sebastian Henseler ,  Christian Beyrle ,  Christian Werner ,  Alexander Kaniut

IPC分类号： G03F7/20 ,  G21K1/06 ,  G02B27/62

CPC分类号： G03F7/70258 ,  G21K1/06 ,  G02B27/62

摘要： A method for swapping an optical system, such as a DUV mirror, of a projection exposure apparatus, comprises: a) raising the optical system along a centre axis of the optical system so that mount struts of the optical system pass out of contact with frame struts of a frame carrying the optical system; b) rotating the optical system about the centre axis so that the mount struts are arranged between the frame struts; c) lowering the optical system along the centre axis; and d) shifting the optical system perpendicularly to the centre axis so that the optical system is moved out of a housing.

公开(公告)号：US20190004434A1

公开(公告)日：2019-01-03

申请号：US16063583

申请日：2016-12-08

申请人： ASML NETHERLANDS B.V.

发明人： Erik Henricus Egidius Catharina EUMMELEN ,  Giovanni Luca GATTOBIGIO ,  Johannes Cornelis Paulus MELMAN ,  Han Henricus Aldegonda LEMPENS ,  Miao YU ,  Cornelius Maria ROPS ,  Ruud OLIESLAGERS ,  Artunç ULUCAN ,  Theodorus Wilhelmus POLET ,  Patrick Johannes Wilhelmus SPRUYTENBURG

IPC分类号： G03F7/20 ,  H01L21/027

CPC分类号： G03F7/70341 ,  G03F7/2041 ,  G03F7/70258 ,  G03F7/70716 ,  H01L21/0274

摘要： An immersion lithographic apparatus having a fluid handling structure, the fluid handling structure configured to confine immersion fluid to a region and including: a meniscus controlling feature having an extractor exit on a surface of the fluid handling structure; and a gas knife system outwards of the extractor exit and including passages each having an exit, the passages having a plurality of first passages having a plurality of corresponding first exits on the surface, and a plurality of second passages having a plurality of corresponding second exits outwards of the first exits on the surface, wherein the surface faces and is substantially parallel to a top surface of a substrate during exposure, and the first exits and the second exits are arranged at a greater distance from the substrate than the extractor exit.

公开(公告)号：US20180364463A1

公开(公告)日：2018-12-20

申请号：US16011564

申请日：2018-06-18

申请人： SUSS Micro Tec Photonic Systems Inc.

发明人： Yanrong Yuan ,  John Bjorkman ,  Paul Ferrari ,  Jeff Hansen

IPC分类号： G02B17/08 ,  G02B7/09 ,  G02B17/00 ,  G02B7/10 ,  H01L21/68 ,  G03F7/20

CPC分类号： G02B17/0896 ,  G02B7/09 ,  G02B7/102 ,  G02B13/26 ,  G02B15/177 ,  G02B17/008 ,  G02B17/0892 ,  G03F7/70191 ,  G03F7/70225 ,  G03F7/70258 ,  H01L21/682

摘要： Techniques are disclosed for magnification compensation and/or beam steering in optical systems. An optical system may include a lens system to receive first radiation associated with an object and direct second radiation associated with an image of the object toward an image plane. The lens system may include a set of lenses, and an actuator system to selectively adjust the set of lenses to adjust a magnification associated with the image symmetrically along a first and a second direction. The lens system may also include a beam steering lens to direct the first radiation to provide the second radiation. In some examples, the lens system may also include a second set of lenses, where the actuator system may also selectively adjust the second set of lenses to adjust the magnification along the first or the second direction. Related methods are also disclosed.

公开(公告)号：US20180253016A1

公开(公告)日：2018-09-06

申请号：US15843371

申请日：2017-12-15

申请人： KLA-Tencor Corporation

发明人： Onur Nihat Demirer ,  William Pierson ,  Mark D. Smith ,  Jeremy S. Nabeth ,  Miguel Garcia-Medina ,  Lipkong Yap

IPC分类号： G03F7/20 ,  H01L21/027

CPC分类号： G03F7/70633 ,  G03F7/70258 ,  G03F7/705 ,  G03F9/7046 ,  H01L21/0274

摘要： A process control system includes a controller configured to generate a reference overlay signature based on one or more overlay reference layers of a sample, extrapolate the reference overlay signature to a set of correctable fields for the exposure of a current layer of the sample to generate a full-field reference overlay signature, identify one or more alignment fields of the set of correctable fields, generate an alignment-correctable signature by modeling alignment corrections for the set of correctable fields, subtract the alignment-correctable signature from the full-field reference overlay signature to generate feedforward overlay corrections for the current layer when the one or more overlay reference layers are the same as the one or more alignment reference layers, generate lithography tool corrections based on the feedforward overlay corrections, and provide the lithography tool corrections for the current layer to the lithography tool.

公开(公告)号：US20180246415A1

公开(公告)日：2018-08-30

申请号：US15878747

申请日：2018-01-24

申请人： Carl Zeiss SMT GmbH

发明人： Stefan Xalter ,  Yim-Bun Patrick Kwan ,  Andras G. Major ,  Manfred Maul ,  Johannes Eisenmenger ,  Damian Fiolka ,  Jan Horn ,  Markus Deguenther ,  Florian Bach ,  Michael Patra ,  Johannes Wangler ,  Michael Layh

IPC分类号： G03F7/20 ,  G05B13/04 ,  G01B11/00 ,  G02B26/08 ,  G01N21/55 ,  G01M11/00 ,  G01B11/27

CPC分类号： G03F7/70258 ,  G01B11/002 ,  G01B11/272 ,  G01M11/30 ,  G01N21/55 ,  G02B26/0833 ,  G03F7/70058 ,  G03F7/70116 ,  G03F7/70133 ,  G03F7/702 ,  G03F7/70291 ,  G03F7/70516 ,  G03F7/7085 ,  G05B13/048 ,  Y10S359/904

摘要： Microlithographic illumination system includes individually drivable elements to variably illuminate a pupil surface of the system. Each element deviates an incident light beam based on a control signal applied to the element. The system also includes an instrument to provide a measurement signal, and a model-based state estimator configured to compute, for each element, an estimated state vector based on the measurement signal. The estimated state vector represents: a deviation of a light beam caused by the element; and a time derivative of the deviation. The illumination system further includes a regulator configured to receive, for each element: a) the estimated state vector; and b) target values for: i) the deviation of the light beam caused by the deviating element; and ii) the time derivative of the deviation.

公开(公告)号：US10061206B2

公开(公告)日：2018-08-28

申请号：US15814765

申请日：2017-11-16

申请人： Carl Zeiss SMT GmbH

发明人： Boris Bittner ,  Norbert Wabra ,  Sonja Schneider ,  Ricarda Schoemer

IPC分类号： G03B27/68 ,  G03F7/20 ,  G02B13/14 ,  G02B27/00

CPC分类号： G03F7/70266 ,  G02B13/143 ,  G02B27/0068 ,  G03F7/70258 ,  G03F7/70308

摘要： A projection lens images a pattern of a mask arranged in the region of an object plane of the projection lens into an image plane of the projection lens via electromagnetic radiation with a work wavelength λ

公开(公告)号：US10054786B2

公开(公告)日：2018-08-21

申请号：US15158983

申请日：2016-05-19

申请人： Carl Zeiss SMT GmbH

发明人： Sascha Bleidistel ,  Manfred Maul

IPC分类号： G03F7/20 ,  G02B26/08 ,  G02B7/02 ,  G02B27/00 ,  G02F1/29

CPC分类号： G02B26/0816 ,  G02B7/028 ,  G02B27/0068 ,  G02F1/293 ,  G03F7/70258 ,  G03F7/70308 ,  G03F7/70891

摘要： The disclosure relates to a correction light device for the irradiation of optical elements of an optical arrangement, in particular a lens, such a microlithography lens having a correction light, which include at least one correction light source and at least one mirror arrangement that deflects the light from the correction light source in the beam path to the optical element such that at least part of at least one surface of at least one optical element of the optical arrangement are irradiated in a locally and/or temporally variable fashion. The correction light strikes the surface of the optical element at a flat angle such that the obtuse angle between the optical axis of the optical arrangement at the location of the optical element and the correction light beam is less than or equal to 105°.

公开(公告)号：US10012911B2

公开(公告)日：2018-07-03

申请号：US15618395

申请日：2017-06-09

申请人： Carl Zeiss SMT GmbH

发明人： Michael Arnz ,  Sascha Bleidistel ,  Toralf Gruner ,  Joachim Hartjes ,  Markus Schwab

IPC分类号： G03B27/68 ,  G03F7/20

CPC分类号： G03F7/706 ,  G03F7/70258 ,  G03F7/70266

摘要： A projection exposure apparatus includes a projection lens, a wavefront manipulator and a wavefront measuring device for measuring a wavefront in the projection lens. The wavefront measuring device includes a Moiré grating arrangement having an object grating and an image grating which are designed to be arranged in an object plane and an image plane, respectively, of the projection lens. The object grating and the image grating are coordinated with one another in a manner true to scale in such a way as to generate a Moiré superimposition pattern from an imaging of the object grating onto the image plane and the image grating. The Moiré grating arrangement is designed in such a way as to simultaneously generate the Moiré superimposition pattern for a plurality of field points of an object field in the object plane and/or of an image field in the image plane.