公开(公告)号：US11527405B2

公开(公告)日：2022-12-13

申请号：US16730897

申请日：2019-12-30

Applicant: ASML Netherlands B.V.

Inventor： Lingling Pu ,  Wei Fang ,  Zhong-wei Chen

IPC: H01L21/02 ,  G03F7/20 ,  G06F30/39 ,  H01J37/147 ,  H01J37/244

Abstract: Systems and methods for in-die metrology using target design patterns are provided. These systems and methods include selecting a target design pattern based on design data representing the design of an integrated circuit, providing design data indicative of the target design pattern to enable design data derived from the target design pattern to be added to second design data, wherein the second design data is based on the first design data. Systems and methods can further include causing structures derived from the second design data to be printed on a wafer, inspecting the structures on the wafer using a charged-particle beam tool, and identifying metrology data or process defects based on the inspection. In some embodiments the systems and methods further include causing the charged-particle beam tool, the second design data, a scanner, or photolithography equipment to be adjusted based on the identified metrology data or process defects.

公开(公告)号：US11126089B2

公开(公告)日：2021-09-21

申请号：US16848724

申请日：2020-04-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Wei Fang ,  Lingling Pu ,  Zhichao Chen ,  Haili Zhang ,  Pengcheng Zhang

IPC: G03F7/20 ,  G03F1/36

Abstract: A method for determining corrections to features of a mask. The method includes obtaining (i) a pattern group for a design layout, and (ii) defect inspection data of a substrate imaged using the mask used in the patterning process for the design layout; determining, based on the defect inspection data, a defect map associated with the pattern group, wherein the defect map comprises locations of assist features having a relatively higher probability of being printed on the substrate compared to other patterns of the design layout; and determining, via simulating an optical proximity correction process using data associated with the defect map, corrections to the features of the mask.

公开(公告)号：US20200326632A1

公开(公告)日：2020-10-15

申请号：US16848724

申请日：2020-04-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Wei Fang ,  Lingling Pu ,  Zhichao Chen ,  Haili Zhang ,  Pengcheng Zhang

IPC: G03F7/20

Abstract: A method for determining corrections to features of a mask. The method includes obtaining (i) a pattern group for a design layout, and (ii) defect inspection data of a substrate imaged using the mask used in the patterning process for the design layout; determining, based on the defect inspection data, a defect map associated with the pattern group, wherein the defect map comprises locations of assist features having a relatively higher probability of being printed on the substrate compared to other patterns of the design layout; and determining, via simulating an optical proximity correction process using data associated with the defect map, corrections to the features of the mask.