公开(公告)号：US11126089B2

公开(公告)日：2021-09-21

申请号：US16848724

申请日：2020-04-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Wei Fang ,  Lingling Pu ,  Zhichao Chen ,  Haili Zhang ,  Pengcheng Zhang

IPC: G03F7/20 ,  G03F1/36

Abstract: A method for determining corrections to features of a mask. The method includes obtaining (i) a pattern group for a design layout, and (ii) defect inspection data of a substrate imaged using the mask used in the patterning process for the design layout; determining, based on the defect inspection data, a defect map associated with the pattern group, wherein the defect map comprises locations of assist features having a relatively higher probability of being printed on the substrate compared to other patterns of the design layout; and determining, via simulating an optical proximity correction process using data associated with the defect map, corrections to the features of the mask.

公开(公告)号：US20200326632A1

公开(公告)日：2020-10-15

申请号：US16848724

申请日：2020-04-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Wei Fang ,  Lingling Pu ,  Zhichao Chen ,  Haili Zhang ,  Pengcheng Zhang

IPC: G03F7/20

Abstract: A method for determining corrections to features of a mask. The method includes obtaining (i) a pattern group for a design layout, and (ii) defect inspection data of a substrate imaged using the mask used in the patterning process for the design layout; determining, based on the defect inspection data, a defect map associated with the pattern group, wherein the defect map comprises locations of assist features having a relatively higher probability of being printed on the substrate compared to other patterns of the design layout; and determining, via simulating an optical proximity correction process using data associated with the defect map, corrections to the features of the mask.