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公开(公告)号:US11581123B2
公开(公告)日:2023-02-14
申请号:US16937498
申请日:2020-07-23
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Syu-Tang Liu , Huang-Hsien Chang , Yunghsun Chen
Abstract: An inductor unit includes a conductive structure, a first magnetic element and an insulating layer. The conductive structure has a bottom conductive layer, a top conductive layer, and a first side conductive layer extending from the bottom conductive layer to the top conductive layer. The first magnetic element is disposed on the bottom conductive layer of the conductive structure. The insulating layer is disposed on the bottom conductive layer of the conductive structure, wherein the insulating layer covers and surrounds the first magnetic element. The circuit structure including the inductor unit and the methods for manufacturing the same are also provided.
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12.
公开(公告)号:US11508634B2
公开(公告)日:2022-11-22
申请号:US17063571
申请日:2020-10-05
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Syu-Tang Liu , Min Lung Huang
IPC: H01L23/31 , H01L23/552
Abstract: A semiconductor package structure, an electronic device, and method for manufacturing the same are provided. The semiconductor package structure includes a wiring structure, a first electronic device, a second electronic device, and a protection material. The first electronic device is disposed on the wiring structure. The second electronic device is disposed on the wiring structure. The second electronic device defines a plurality of recesses on a first lateral side surface thereof. The protection material is disposed on the wiring structure and encapsulates the recesses of the second electronic device.
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公开(公告)号:US11107881B2
公开(公告)日:2021-08-31
申请号:US16395156
申请日:2019-04-25
Applicant: Advanced Semiconductor Engineering, Inc.
Inventor: Shao Hsuan Chuang , Huang-Hsien Chang , Min Lung Huang , Yu Cheng Chen , Syu-Tang Liu
IPC: H01L49/02
Abstract: The subject application relates to a semiconductor package device, which includes a first conductive layer; a semiconductor wall disposed on the first conductive layer; a first conductive wall disposed on the first conductive layer; and an insulation layer disposed on the first conductive layer and between the semiconductor wall and the first conductive wall.
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