公开(公告)号：US06452180B1

公开(公告)日：2002-09-17

申请号：US09536659

申请日：2000-03-28

申请人： John L. Nistler ,  Christopher H. Raeder

发明人： John L. Nistler ,  Christopher H. Raeder

IPC分类号： G01J502

CPC分类号： G01N21/71

摘要： Various methods of inspecting a film on a semiconductor workpiece for a residue are provided. In one aspect, a method of inspecting a film on a semiconductor workpiece wherein the film has a known infrared signature is provided. The method includes heating the workpiece so that the film emits infrared radiation and sensing the infrared radiation emitted from the film. The infrared signature of the radiation emitted from the film is compared with the known infrared signature and a signal indicative of a deviation between the infrared signature of the emitted infrared radiation and the known infrared signature is generated. The method enables the rapid and accurate detection of residues, such as oxide residues on nitride films.

摘要翻译： 提供了在半导体工件上检查残留物的各种方法。 一方面，提供了一种检查半导体工件上的膜的方法，其中膜具有已知的红外线标记。 该方法包括加热工件，使得膜发射红外辐射并感测从膜发射的红外辐射。 将从胶片发射的辐射的红外特征与已知的红外特征进行比较，并产生指示所发射的红外辐射的红外特征与已知红外特征之间的偏差的信号。 该方法能够快速准确地检测残留物，例如氮化物膜上的氧化物残留物。

公开(公告)号：US06331137B1

公开(公告)日：2001-12-18

申请号：US09143046

申请日：1998-08-28

申请人： Christopher H. Raeder ,  Kevin Shipley

发明人： Christopher H. Raeder ,  Kevin Shipley

IPC分类号： B24B724

CPC分类号： B24B37/26 ,  B24B53/017 ,  Y10S451/921

摘要： A polishing pad having a cross-sectional open area which varies with depth from the pad surface is provided. The cross-sectional open area of the pad may increase and/or decrease moving away from the outer pad surface. In some cases, the cross-sectional open area of the pad varies uniformly with depth over the entire pad. In other cases, certain regions of the pad may define local cross-sectional open areas which vary differently. This can, for example, allow the open area of the pad to vary with pad life and improve or tailor the polishing uniformity of the pad and/or extend the useful life of the pad.

摘要翻译： 提供具有与衬垫表面的深度不同的横截面开口面积的抛光垫。 垫的横截面开口面积可以增加和/或减小远离外垫表面移动。 在一些情况下，垫的横截面开放面积在整个垫上随深度均匀地变化。 在其他情况下，垫的某些区域可以限定局部横截面敞开的区域，其不同地变化。 例如，这可以允许垫的开放区域随着焊盘寿命而变化，并且改善或调整焊盘的抛光均匀性和/或延长焊盘的使用寿命。

公开(公告)号：US06276989B1

公开(公告)日：2001-08-21

申请号：US09372014

申请日：1999-08-11

申请人： W. Jarrett Campbell ,  Jeremy Lansford ,  Christopher H. Raeder

发明人： W. Jarrett Campbell ,  Jeremy Lansford ,  Christopher H. Raeder

IPC分类号： B24B4900

CPC分类号： B24B37/005 ,  B24B37/042 ,  B24B49/03

摘要： A method of controlling surface non-uniformity of a process layer includes receiving a first lot of wafers, and polishing a process layer of the first lot of wafers. A control variable of the polishing operations is measured after the polishing is performed on the process layer. A first adjustment input for an arm oscillation length of a polishing tool is determined based on the measurement of the control variable. A process layer of a second lot of wafers is polished using the adjustment input for the arm oscillation length. A controller for controlling surface non-uniformity of a process layer includes an optimizer and an interface. The optimizer is adapted to determine a first adjustment input for arm oscillation length of a polishing tool based on a measurement of a control variable from a first lot of wafers. The interface is adapted to provide the first adjustment input to the polishing tool for polishing a second lot of wafers.

摘要翻译： 控制处理层的表面不均匀性的方法包括接收第一批晶片，并抛光第一批晶片的工艺层。 在对工艺层进行抛光之后，测量抛光操作的控制变量。 基于控制变量的测量来确定用于抛光工具的臂振荡长度的第一调节输入。 使用用于臂振荡长度的调节输入来抛光第二批晶片的处理层。 用于控制处理层的表面不均匀性的控制器包括优化器和接口。 优化器适于基于来自第一批晶片的控制变量的测量来确定抛光工具的臂振荡长度的第一调整输入。 接口适于提供第一调整输入到抛光工具以抛光第二批晶片。

公开(公告)号：US6057068A

公开(公告)日：2000-05-02

申请号：US205483

申请日：1998-12-04

申请人： Christopher H. Raeder ,  Thomas Brown ,  Peter A. Burke

发明人： Christopher H. Raeder ,  Thomas Brown ,  Peter A. Burke

IPC分类号： B24B49/00 ,  H01L21/306 ,  G03F9/00

CPC分类号： B24B37/005 ,  B24B49/00 ,  H01L21/30625

摘要： A method for measuring the planarization efficiency of a planarization process and a device for use with the method are provided. The device may be a substrate having a set of isolated features, such as trenches or hills, with different widths. In the method, a removable layer of material is formed over the substrate. The substrate features form corresponding features in the removable layer with varying dimensions. A pre-planarization thickness of the removable layer of material is measured at each feature and at one or more of isolation areas. The removable layer of material is then planarized using a planarization process associated with one or more process parameters. A post-planarization thickness of the removable is measured at each feature and at one or more of the isolation regions. The planarization efficiency of the planarization process is then determined as a function of the dimensions of the substrate features or corresponding features in the removable layers and/or one or more process parameters. The determined planarization efficiency may be output by, for example, generating a graph of the planarization efficiency or using the planarization efficiency to change one or more parameters of the planarization process.

摘要翻译： 提供了一种用于测量平面化处理的平坦化效率的方法和用于该方法的装置。 该装置可以是具有一组具有不同宽度的隔离特征（例如沟槽或丘陵）的基板。 在该方法中，在衬底上形成可去除的材料层。 衬底特征在具有不同尺寸的可移除层中形成相应的特征。 在每个特征和一个或多个隔离区域处测量可去除材料层的预平坦化厚度。 然后使用与一个或多个工艺参数相关联的平坦化处理将可移除的材料层平坦化。 在每个特征和一个或多个隔离区域处测量可去除的后平面化厚度。 然后，平坦化处理的平坦化效率被确定为可移除层中的衬底特征或相应特征的尺寸和/或一个或多个工艺参数的函数。 确定的平坦化效率可以通过例如生成平坦化效率的图形或者使用平坦化效率来改变平坦化处理的一个或多个参数来输出。