公开(公告)号：US06276989B1

公开(公告)日：2001-08-21

申请号：US09372014

申请日：1999-08-11

申请人： W. Jarrett Campbell ,  Jeremy Lansford ,  Christopher H. Raeder

发明人： W. Jarrett Campbell ,  Jeremy Lansford ,  Christopher H. Raeder

IPC分类号： B24B4900

CPC分类号： B24B37/005 ,  B24B37/042 ,  B24B49/03

摘要： A method of controlling surface non-uniformity of a process layer includes receiving a first lot of wafers, and polishing a process layer of the first lot of wafers. A control variable of the polishing operations is measured after the polishing is performed on the process layer. A first adjustment input for an arm oscillation length of a polishing tool is determined based on the measurement of the control variable. A process layer of a second lot of wafers is polished using the adjustment input for the arm oscillation length. A controller for controlling surface non-uniformity of a process layer includes an optimizer and an interface. The optimizer is adapted to determine a first adjustment input for arm oscillation length of a polishing tool based on a measurement of a control variable from a first lot of wafers. The interface is adapted to provide the first adjustment input to the polishing tool for polishing a second lot of wafers.

摘要翻译： 控制处理层的表面不均匀性的方法包括接收第一批晶片，并抛光第一批晶片的工艺层。 在对工艺层进行抛光之后，测量抛光操作的控制变量。 基于控制变量的测量来确定用于抛光工具的臂振荡长度的第一调节输入。 使用用于臂振荡长度的调节输入来抛光第二批晶片的处理层。 用于控制处理层的表面不均匀性的控制器包括优化器和接口。 优化器适于基于来自第一批晶片的控制变量的测量来确定抛光工具的臂振荡长度的第一调整输入。 接口适于提供第一调整输入到抛光工具以抛光第二批晶片。

公开(公告)号：US06350179B2

公开(公告)日：2002-02-26

申请号：US09749112

申请日：2000-12-26

申请人： William Jarrett Campbell ,  Jeremy Lansford

发明人： William Jarrett Campbell ,  Jeremy Lansford

IPC分类号： B24B100

CPC分类号： B24B49/02 ,  B24B37/005 ,  B24B37/042 ,  H01L22/26

摘要： The present invention is directed to the field of semiconductor processing and, more particularly, to a method of planarizing or polishing process layers formed above a surface of a semiconducting substrate. In one illustrative embodiment, the method comprises determining the thickness of a process layer formed above a semiconducting substrate and determining a polishing recipe for said process layer based upon the measured thickness of said process layer.

摘要翻译： 本发明涉及半导体处理领域，更具体地，涉及一种在半导体衬底的表面上形成的工艺层的平面化或抛光方法。 在一个说明性实施例中，该方法包括确定在半导体衬底上形成的工艺层的厚度，并且基于所测量的所述工艺层的厚度来确定所述工艺层的抛光配方。

公开(公告)号：US06335286B1

公开(公告)日：2002-01-01

申请号：US09568867

申请日：2000-05-09

申请人： Jeremy Lansford

发明人： Jeremy Lansford

IPC分类号： H01L2100

CPC分类号： B24B37/345 ,  B24B29/02 ,  B24B49/03 ,  H01L21/3212 ,  H01L22/20

摘要： A method includes providing a first wafer having at least one process layer formed thereon. A portion of a first process layer is removed using a polishing process. A portion of at least one of the first process layer and a second process layer is removed using a buffing process for a pre-selected duration of time. A buffed surface of at least one of the first process layer and the second process layer is inspected to determine a post-buff defect density for the inspected process layer. The duration of the buffing process is adjusted for a second wafer based on the determined post-buff defect density of the inspected process layer. A system includes a processing tool, at least one metrology tool, and a process controller. The processing tool is adapted to remove at least a portion of a first process layer of a first wafer using a buffing process for a pre-selected duration of time. The at least one metrology tool is adapted to determine a post-buff defect density of at least one of the first process layer and a second process layer. The process controller is coupled to at least one of the processing tool and the at least one metrology tool. The process controller is adapted to receive the determined post-buff defect density from the at least one metrology tool, and adjust the duration of the buffing process for a second wafer based on the determined post-buff defect density of the first wafer.

摘要翻译： 一种方法包括提供其上形成有至少一个处理层的第一晶片。 使用抛光工艺去除第一工艺层的一部分。 第一处理层和第二处理层中的至少一个的一部分使用抛光处理去除预选的持续时间。 检查第一处理层和第二处理层中的至少一个的抛光表面以确定被检查处理层的后抛光体缺陷密度。 基于所检测的处理层的后抛光体缺陷密度，对第二晶片调整抛光过程的持续时间。 系统包括处理工具，至少一个计量工具和过程控制器。 处理工具适于使用预选持续时间的抛光过程去除第一晶片的第一处理层的至少一部分。 所述至少一个计量工具适用于确定所述第一处理层和所述第二处理层中的至少一个的后抛光体缺陷密度。 过程控制器耦合到处理工具和至少一个计量工具中的至少一个。 过程控制器适于从至少一个计量工具接收所确定的后抛光体缺陷密度，并且基于所确定的第一晶片的后抛光体缺陷密度来调整第二晶片的抛光过程的持续时间。

公开(公告)号：US06567718B1

公开(公告)日：2003-05-20

申请号：US09627874

申请日：2000-07-28

申请人： William J. Campbell ,  Jeremy Lansford ,  Michael R. Conboy

发明人： William J. Campbell ,  Jeremy Lansford ,  Michael R. Conboy

IPC分类号： G06F1900

CPC分类号： G05B19/4184 ,  G05B2219/32234 ,  G05B2219/45031 ,  Y02P90/14 ,  Y10T70/5628

摘要： A method for monitoring consumable performance in a processing tool comprises storing a performance model of the processing tool; receiving a consumable item characteristic of a consumable item in the processing tool; determining a predicted processing rate for the processing tool based on the consumable item characteristic and the performance model; determining an actual processing rate of the processing tool; and determining a replacement interval for the consumable item based on at least the actual processing rate. A processing system includes a processing tool and an automatic process controller. The processing tool is adapted to process wafers and includes a consumable item.

摘要翻译： 一种用于监视处理工具中的消耗性能的方法，包括存储处理工具的性能模型; 在所述处理工具中接收消耗品特征的消耗品; 基于消耗品特征和性能模型确定处理工具的预测处理速率; 确定所述处理工具的实际处理速率; 以及至少基于所述实际处理速率确定所述消耗品的替换间隔。 处理系统包括处理工具和自动过程控制器。 处理工具适于处理晶片并且包括消耗品。

公开(公告)号：US06217412B1

公开(公告)日：2001-04-17

申请号：US09372017

申请日：1999-08-11

申请人： William Jarrett Campbell ,  Jeremy Lansford

发明人： William Jarrett Campbell ,  Jeremy Lansford

IPC分类号： B24B4900

CPC分类号： B24B49/03 ,  B24B37/042 ,  H01L21/30625

摘要： The present invention is directed to semiconductor processing operations, and, more particularly, chemical mechanical polishing operations. The present invention is comprised of a method for qualifying new polishing pads used in a polishing tool without the necessity of polishing test wafers.

摘要翻译： 本发明涉及半导体加工操作，特别是化学机械抛光操作。 本发明包括用于对抛光工具中使用的新抛光垫进行鉴定的方法，而不需要抛光测试晶片。

公开(公告)号：US06511898B1

公开(公告)日：2003-01-28

申请号：US09577769

申请日：2000-05-24

申请人： Thomas Sonderman ,  Jeremy Lansford ,  Anthony J. Toprac

发明人： Thomas Sonderman ,  Jeremy Lansford ,  Anthony J. Toprac

IPC分类号： H01L2120

CPC分类号： H01L22/26 ,  H01L22/14

摘要： A processing line includes a deposition tool, a metrology tool and a controller. The deposition tool is adapted to form a polysilicon layer on a wafer in accordance with a recipe. The metrology tool is adapted to measure a grain size of the polysilicon layer. The controller is adapted to modify the recipe for subsequently formed polysilicon layers based on the measured grain size. A method for controlling a deposition process includes forming a polysilicon layer on a wafer in accordance with a recipe; measuring a grain size of the polysilicon layer; and changing the recipe for subsequently formed polysilicon layers based on the measured grain size.

摘要翻译： 处理线包括沉积工具，计量工具和控制器。 沉积工具适于根据配方在晶片上形成多晶硅层。 测量工具适于测量多晶硅层的晶粒尺寸。 控制器适于基于测量的晶粒尺寸修改随后形成的多晶硅层的配方。 控制沉积工艺的方法包括根据配方在晶片上形成多晶硅层; 测量多晶硅层的晶粒尺寸; 并根据测得的晶粒尺寸改变随后形成的多晶硅层的配方。

公开(公告)号：US06485990B1

公开(公告)日：2002-11-26

申请号：US09476875

申请日：2000-01-04

申请人： Jeremy Lansford

发明人： Jeremy Lansford

IPC分类号： H01L2100

CPC分类号： H01L22/26 ,  H01L22/20

摘要： A method includes measuring a surface non-uniformity of a wafer. A current state of an etch processing tool is determined. The surface non-uniformity of the wafer is compared with the current state of the processing tool. An operating parameter of the processing tool is adjusted based on the comparison of the surface non-uniformity of the wafer with the current state of the processing tool. A system includes a processing tool, a plurality of measuring devices, and a process controller. The processing tool is adapted for etch processing of a wafer. The plurality of measuring devices measure a surface non-uniformity of the wafer and determine a current state of the processing tool. The process controller compares the surface non-uniformity of the wafer with the current state of the processing tool and adjusts an operating parameter of the processing tool based on the comparison.

摘要翻译： 一种方法包括测量晶片的表面不均匀性。 确定蚀刻处理工具的当前状态。 将晶片的表面不均匀性与加工工具的当前状态进行比较。 基于晶片的表面不均匀性与处理工具的当前状态的比较来调整处理工具的操作参数。 一种系统包括处理工具，多个测量装置和过程控制器。 处理工具适用于晶片的蚀刻处理。 多个测量装置测量晶片的表面不均匀性并确定处理工具的当前状态。 过程控制器将晶片的表面不均匀性与处理工具的当前状态进行比较，并且基于该比较来调整处理工具的操作参数。

公开(公告)号：US06213848B1

公开(公告)日：2001-04-10

申请号：US09372515

申请日：1999-08-11

申请人： William Jarrett Campbell ,  Jeremy Lansford

发明人： William Jarrett Campbell ,  Jeremy Lansford

IPC分类号： B24B100

CPC分类号： B24B49/02 ,  B24B37/005 ,  B24B37/042 ,  H01L22/26

摘要： The present invention is directed to the field of semiconductor processing and, more particularly, to a method of planarizing or polishing process layers formed above a surface of a semiconducting substrate. In one illustrative embodiment, the method comprises determining the thickness of a process layer formed above a semiconducting substrate and determining a polishing recipe for said process layer based upon the measured thickness of said process layer.

摘要翻译： 本发明涉及半导体处理领域，更具体地，涉及一种在半导体衬底的表面上形成的工艺层的平面化或抛光方法。 在一个说明性实施例中，该方法包括确定在半导体衬底上形成的工艺层的厚度，并且基于所测量的所述工艺层的厚度来确定所述工艺层的抛光配方。

公开(公告)号：US20050098535A1

公开(公告)日：2005-05-12

申请号：US10996034

申请日：2004-11-23

申请人： Jeremy Lansford ,  Laura Faulk

发明人： Jeremy Lansford ,  Laura Faulk

IPC分类号： H01L21/3065 ,  H01L21/00 ,  C23F1/00

CPC分类号： H01L21/67253

摘要： A method for controlling an etch process comprises providing a wafer having at least a first layer and a second layer formed over the first layer. The thickness of the second layer is measured. An etch selectivity parameter is determined based on the measured thickness of the second layer. An operating recipe of an etch tool is modified based on the etch selectivity parameter. A processing line includes an etch tool, a first metrology tool, and a process controller. The etch tool is adapted to etch a plurality of wafers based on an operating recipe, each wafer having at least a first layer and a second layer formed over the first layer. The first metrology tool is adapted to measure a pre-etch thickness of the second layer. The process controller is adapted to determine an etch selectivity parameter based on the measured pre-etch thickness of the second layer and modify the operating recipe of the etch tool based on the etch selectivity parameter.

摘要翻译： 一种用于控制蚀刻工艺的方法包括提供具有形成在第一层上的至少第一层和第二层的晶片。 测量第二层的厚度。 基于测量的第二层的厚度来确定蚀刻选择性参数。 基于蚀刻选择性参数修改蚀刻工具的操作配方。 处理线包括蚀刻工具，第一计量工具和过程控制器。 蚀刻工具适于基于操作配方蚀刻多个晶片，每个晶片具有至少第一层和形成在第一层上的第二层。 第一计量工具适于测量第二层的预蚀刻厚度。 过程控制器适于基于测量的第二层的预蚀刻厚度来确定蚀刻选择性参数，并且基于蚀刻选择性参数修改蚀刻工具的操作配方。

公开(公告)号：US06746616B1

公开(公告)日：2004-06-08

申请号：US09818666

申请日：2001-03-27

申请人： H. Jim Fulford ,  Jeremy Lansford

发明人： H. Jim Fulford ,  Jeremy Lansford

IPC分类号： C23F100

CPC分类号： H01L21/67253 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137 ,  H01L22/20

摘要： In one illustrative embodiment, a system is comprised of a semiconductor processing tool, an etcher, a metrology tool, and a controller. The semiconductor processing tool is capable of forming a process layer above a semiconducting substrate. The etcher is capable of removing at least a portion of the process layer. The metrology tool is capable of measuring a first depth of the etch at a first location in a first preselected region of the semiconducting substrate. The controller is capable of comparing the first depth to a desired depth, and varying the temperature of a subsequently processed semiconducting substrate in a region corresponding to the first preselected region in response to the first depth being different from the desired depth.

摘要翻译： 在一个说明性实施例中，系统由半导体处理工具，蚀刻器，计量工具和控制器组成。 半导体处理工具能够在半导体衬底上形成工艺层。 蚀刻器能够去除工艺层的至少一部分。 测量工具能够测量半导体衬底的第一预选区域中的第一位置处的蚀刻的第一深度。 控制器能够将第一深度与期望的深度进行比较，并且响应于第一深度不同于期望深度，改变随后处理的半导体衬底在对应于第一预选区域的区域中的温度。