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Patent Agency Ranking
公开(公告)号：US20190128939A1
公开(公告)日：2019-05-02
申请号：US15801132
申请日：2017-11-01
Applicant: Analog Devices Global
Inventor： Alan J. O'Donnell , David Aherne , Javier Alejandro Salcedo , David J. Clarke , John A. Cleary , Patrick Martin McGuinness , Albert C. O'Grady
Abstract: Aspects of this disclosure relate to detecting and recording information associated with electrical overstress (EOS) events, such as electrostatic discharge (ESD) events. For example, in one embodiment, an apparatus includes an electrical overstress protection device, a detection circuit configured to detect an occurrence of the EOS event, and a memory configured to store information indicative of the EOS event.
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公开(公告)号：US20180059044A1
公开(公告)日：2018-03-01
申请号：US15251833
申请日：2016-08-30
Applicant: Analog Devices Global
Inventor： Alfonso Berduque , Helen Berney , William Allan Lane , Raymond J. Speer , Brendan Cawley , Donal Mcauliffe , Patrick Martin McGuinness
IPC: G01N27/403
CPC classification number: G01N27/403 , G01N27/4045
Abstract: An electrochemical sensor is provided which may be formed using micromachining techniques commonly used in the manufacture of integrated circuits. This is achieved by forming microcapillaries in a silicon substrate and forming an opening in an insulating layer to allow environmental gases to reach through to the top side of the substrate. A porous electrode is printed on the top side of the insulating layer such that the electrode is formed in the opening in the insulating layer. The sensor also comprises at least one additional electrode. The electrolyte is then formed on top of the electrodes. A cap is formed over the electrodes and electrolyte. This arrangement may easily be produced using micromachining techniques.
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公开(公告)号：US09871373B2
公开(公告)日：2018-01-16
申请号：US14671767
申请日：2015-03-27
Applicant: Analog Devices Global
Inventor： Alan J. O'Donnell , David Aherne , Javier Alejandro Salcedo , David J. Clarke , John A. Cleary , Patrick Martin McGuinness , Albert C. O'Grady
CPC classification number: H02H9/04 , H01L27/0248 , H01L2224/32145 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/181 , H02H9/02 , H02H9/042 , H02H9/046 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
Abstract: Aspects of this disclosure relate to detecting and recording information associated with electrical overstress (EOS) events, such as electrostatic discharge (ESD) events. For example, in one embodiment, an apparatus includes an electrical overstress protection device, a detection circuit configured to detect an occurrence of the EOS event, and a memory configured to store information indicative of the EOS event.
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14.发明授权Magnetic core for use in an integrated circuit, an integrated circuit including such a magnetic core, a transformer and an inductor fabricated as part of an integrated circuit 有权用于集成电路的磁芯，包括这种磁芯的集成电路，变压器和作为集成电路的一部分制造的电感器公开(公告)号：US09484136B2
公开(公告)日：2016-11-01
申请号：US13927459
申请日：2013-06-26
Applicant: ANALOG DEVICES GLOBAL
Inventor： Michael Noel Morrissey , Jan Kubik , Shane Patrick Geary , Patrick Martin McGuinness , Catriona Marie O'Sullivan
CPC classification number: H01F3/00 , H01F27/24 , H01F27/245 , H01F27/2804 , H01F2027/2809 , H01L43/02 , H01L43/12
Abstract: A magnetic core is provided for an integrated circuit, the magnetic core comprising: a plurality of layers of magnetically functional material; a plurality of layers of a first insulating material; and at least one layer of an secondary insulating material; wherein layers of the first insulating material are interposed between layers of the magnetically functional material to form subsections of the magnetic core, and the at least one layer of second insulating material is interposed between adjacent subsections.
Abstract translation: 为集成电路提供磁芯，该磁芯包括：多层磁性功能材料; 多层第一绝缘材料; 和至少一层次级绝缘材料; 其中所述第一绝缘材料的层插入在所述磁性功能材料的层之间以形成所述磁芯的子部分，并且所述至少一层第二绝缘材料插入在相邻的子部分之间。
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公开(公告)号：US20160285255A1
公开(公告)日：2016-09-29
申请号：US14671767
申请日：2015-03-27
Applicant: Analog Devices Global
Inventor： Alan J. O'Donnell , David Aherne , Javier Alejandro Salcedo , David J. Clarke , John A. Cleary , Patrick Martin McGuinness , Albert C. O'Grady
CPC classification number: H02H9/04 , H01L27/0248 , H01L2224/32145 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/181 , H02H9/02 , H02H9/042 , H02H9/046 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
Abstract: Aspects of this disclosure relate to detecting and recording information associated with electrical overstress (EOS) events, such as electrostatic discharge (ESD) events. For example, in one embodiment, an apparatus includes an electrical overstress protection device, a detection circuit configured to detect an occurrence of the EOS event, and a memory configured to store information indicative of the EOS event.
Abstract translation: 本公开的方面涉及检测和记录与电应力（EOS）事件相关的信息，例如静电放电（ESD）事件。 例如，在一个实施例中，一种装置包括电过压保护装置，被配置为检测EOS事件的发生的检测电路，以及被配置为存储指示EOS事件的信息的存储器。
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