公开(公告)号：US20100181619A1

公开(公告)日：2010-07-22

申请号：US12752487

申请日：2010-04-01

申请人： Andy Wei ,  Thorsten Kammler ,  Jan Hoentschel ,  Manfred Horstmann

发明人： Andy Wei ,  Thorsten Kammler ,  Jan Hoentschel ,  Manfred Horstmann

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/66621 ,  H01L29/165 ,  H01L29/66583 ,  H01L29/7834 ,  H01L29/7848

摘要： A method of forming a field effect transistor comprises providing a substrate comprising a biaxially strained layer of a semiconductor material. A gate electrode is formed on the biaxially strained layer of semiconductor material. A raised source region and a raised drain region are formed adjacent the gate electrode. Ions of a dopant material are implanted into the raised source region and the raised drain region to form an extended source region and an extended drain region. Moreover, in methods of forming a field effect transistor according to embodiments of the present invention, a gate electrode can be formed in a recess of a layer of semiconductor material. Thus, a field effect transistor wherein a source side channel contact region and a drain side channel contact region located adjacent a channel region are subject to biaxial strain can be obtained.

摘要翻译： 形成场效应晶体管的方法包括提供包括半导体材料的双轴应变层的衬底。 在半导体材料的双轴应变层上形成栅电极。 在栅电极附近形成凸起的源区和升高的漏极区。 将掺杂剂材料的离子注入到凸起的源极区域和隆起的漏极区域中，以形成扩展的源极区域和延伸的漏极区域。 此外，在形成根据本发明的实施例的场效应晶体管的方法中，可以在半导体材料层的凹部中形成栅电极。 因此，可以获得其中位于沟道区附近的源极侧沟道接触区域和漏极侧沟道接触区域受到双轴应变的场效应晶体管。

公开(公告)号：US07579262B2

公开(公告)日：2009-08-25

申请号：US11562001

申请日：2006-11-21

申请人： Jan Hoentschel ,  Andy Wei ,  Manfred Horstmann ,  Thorsten Kammler

发明人： Jan Hoentschel ,  Andy Wei ,  Manfred Horstmann ,  Thorsten Kammler

IPC分类号： H01L21/20 ,  H01L21/76 ,  H01L21/336

CPC分类号： H01L21/823814 ,  H01L21/28097 ,  H01L21/823807 ,  H01L29/4975 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7848

摘要： By omitting a growth mask or by omitting lithographical patterning processes for forming growth masks, a significant reduction in process complexity may be obtained for the formation of different strained semiconductor materials in different transistor types. Moreover, the formation of individually positioned semiconductor materials in different transistors may be accomplished on the basis of a differential disposable spacer approach, thereby combining high efficiency with low process complexity even for highly advanced SOI transistor devices.

摘要翻译： 通过省略生长掩模或通过省略用于形成生长掩模的光刻图案化工艺，可以获得在不同晶体管类型中形成不同应变半导体材料的工艺复杂性的显着降低。 此外，可以基于差分一次性间隔物方法来实现在不同晶体管中形成单独定位的半导体材料，从而即使对于高度先进的SOI晶体管器件也可以组合高效率和低工艺复杂性。

公开(公告)号：US20080090349A1

公开(公告)日：2008-04-17

申请号：US11562001

申请日：2006-11-21

申请人： Jan Hoentschel ,  Andy Wei ,  Manfred Horstmann ,  Thorsten Kammler

发明人： Jan Hoentschel ,  Andy Wei ,  Manfred Horstmann ,  Thorsten Kammler

IPC分类号： H01L21/8238

CPC分类号： H01L21/823814 ,  H01L21/28097 ,  H01L21/823807 ,  H01L29/4975 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7848

摘要： By omitting a growth mask or by omitting lithographical patterning processes for forming growth masks, a significant reduction in process complexity may be obtained for the formation of different strained semiconductor materials in different transistor types. Moreover, the formation of individually positioned semiconductor materials in different transistors may be accomplished on the basis of a differential disposable spacer approach, thereby combining high efficiency with low process complexity even for highly advanced SOI transistor devices.

摘要翻译： 通过省略生长掩模或通过省略用于形成生长掩模的光刻图案化工艺，可以获得在不同晶体管类型中形成不同应变半导体材料的工艺复杂性的显着降低。 此外，可以基于差分一次性间隔物方法来实现在不同晶体管中形成单独定位的半导体材料，从而即使对于高度先进的SOI晶体管器件也可以组合高效率和低工艺复杂性。

公开(公告)号：US20070254461A1

公开(公告)日：2007-11-01

申请号：US11566840

申请日：2006-12-05

申请人： Andy Wei ,  Thorsten Kammler ,  Jan Hoentschel ,  Manfred Horstmann

发明人： Andy Wei ,  Thorsten Kammler ,  Jan Hoentschel ,  Manfred Horstmann

IPC分类号： H01L21/425

CPC分类号： C23C8/20 ,  C23C8/80 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7843 ,  H01L29/7848

摘要： By incorporating carbon by means of ion implantation and a subsequent flash-based or laser-based anneal process, strained silicon/carbon material with tensile strain may be positioned in close proximity to the channel region, thereby enhancing the strain-inducing mechanism. The carbon implantation may be preceded by a pre-amorphization implantation, for instance on the basis of silicon. Moreover, by removing a spacer structure used for forming deep drain and source regions, the degree of lateral offset of the strained silicon/carbon material with respect to the gate electrode may be determined substantially independently from other process requirements. Moreover, an additional sidewall spacer used for forming metal silicide regions may be provided with reduced permittivity, thereby additionally contributing to an overall performance enhancement.

摘要翻译： 通过离子注入和随后的基于闪光或基于激光的退火工艺引入碳，具有拉伸应变的应变硅/碳材料可以紧邻通道区域定位，从而增强应变诱导机制。 可以在碳注入之前进行预非晶化注入，例如基于硅。 此外，通过去除用于形成深漏极和源极区的间隔结构，应变硅/碳材料相对于栅极的横向偏移程度可以基本上独立于其它工艺要求来确定。 此外，用于形成金属硅化物区域的附加侧壁间隔物可以具有降低的介电常数，从而另外有助于整体性能提高。

公开(公告)号：US20070252204A1

公开(公告)日：2007-11-01

申请号：US11563986

申请日：2006-11-28

申请人： Andy Wei ,  Thorsten Kammler ,  Jan Hoentschel ,  Manfred Horstmann

发明人： Andy Wei ,  Thorsten Kammler ,  Jan Hoentschel ,  Manfred Horstmann

IPC分类号： H01L27/12

CPC分类号： H01L29/78612 ,  H01L21/26513 ,  H01L21/823807 ,  H01L21/823878 ,  H01L21/84 ,  H01L29/1045 ,  H01L29/41783 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/66772 ,  H01L29/7833 ,  H01L29/7843 ,  H01L29/7848 ,  H01L29/78621 ,  H01L29/78684

摘要： By forming a portion of a PN junction within strained silicon/germanium material in SOI transistors with a floating body architecture, the junction leakage may be significantly increased, thereby reducing floating body effects. The positioning of a portion of the PN junction within the strained silicon/germanium material may be accomplished on the basis of implantation and anneal techniques, contrary to conventional approaches in which in situ doped silicon/germanium is epitaxially grown so as to form the deep drain and source regions. Consequently, high drive current capability may be combined with a reduction of floating body effects.

摘要翻译： 通过在具有浮体结构的SOI晶体管中形成应变硅/锗材料中的PN结的一部分，结点泄漏可能显着增加，从而减少浮体效应。 PN结在应变硅/锗材料中的一部分的定位可以基于注入和退火技术来实现，这与常规方法相反，其中原位掺杂的硅/锗被外延生长以便形成深漏极 和源区。 因此，高驱动电流能力可以与减少浮体效应相结合。

公开(公告)号：US20070228357A1

公开(公告)日：2007-10-04

申请号：US11558982

申请日：2006-11-13

申请人： Andy Wei ,  Thorsten Kammler ,  Jan Hoentschel ,  Manfred Horstmann

发明人： Andy Wei ,  Thorsten Kammler ,  Jan Hoentschel ,  Manfred Horstmann

IPC分类号： H01L31/00

CPC分类号： H01L29/66636 ,  H01L29/165 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/7834 ,  H01L29/7843 ,  H01L29/7848

摘要： A strained semiconductor material may be positioned in close proximity to the channel region of a transistor, such as an SOI transistor, while reducing or avoiding undue relaxation effects of metal silicides and extension implantations, thereby providing enhanced efficiency for the strain generation.

摘要翻译： 应变半导体材料可以位于诸如SOI晶体管的晶体管的沟道区域附近，同时减少或避免金属硅化物和延伸注入的不适当的松弛效应，从而为应变产生提供增强的效率。

公开(公告)号：US07723195B2

公开(公告)日：2010-05-25

申请号：US11566287

申请日：2006-12-04

申请人： Andy Wei ,  Thorsten Kammler ,  Jan Hoentschel ,  Manfred Horstmann

发明人： Andy Wei ,  Thorsten Kammler ,  Jan Hoentschel ,  Manfred Horstmann

IPC分类号： H01L21/336

CPC分类号： H01L29/66621 ,  H01L29/165 ,  H01L29/66583 ,  H01L29/7834 ,  H01L29/7848

摘要： A method of forming a field effect transistor comprises providing a substrate comprising a biaxially strained layer of a semiconductor material. A gate electrode is formed on the biaxially strained layer of semiconductor material. A raised source region and a raised drain region are formed adjacent the gate electrode. Ions of a dopant material are implanted into the raised source region and the raised drain region to form an extended source region and an extended drain region. Moreover, in methods of forming a field effect transistor according to embodiments of the present invention, a gate electrode can be formed in a recess of a layer of semiconductor material. Thus, a field effect transistor wherein a source side channel contact region and a drain side channel contact region located adjacent a channel region are subject to biaxial strain can be obtained.

摘要翻译： 形成场效应晶体管的方法包括提供包括半导体材料的双轴应变层的衬底。 在半导体材料的双轴应变层上形成栅电极。 在栅电极附近形成凸起的源区和升高的漏极区。 将掺杂剂材料的离子注入到凸起的源极区域和隆起的漏极区域中，以形成扩展的源极区域和延伸的漏极区域。 此外，在形成根据本发明的实施例的场效应晶体管的方法中，可以在半导体材料层的凹部中形成栅电极。 因此，可以获得其中位于沟道区附近的源极侧沟道接触区域和漏极侧沟道接触区域受到双轴应变的场效应晶体管。

公开(公告)号：US07399663B2

公开(公告)日：2008-07-15

申请号：US11466572

申请日：2006-08-23

申请人： Jan Hoentschel ,  Andy Wei ,  Manfred Horstmann ,  Thorsten Kammler

发明人： Jan Hoentschel ,  Andy Wei ,  Manfred Horstmann ,  Thorsten Kammler

IPC分类号： H01L21/00 ,  H01L21/336

CPC分类号： H01L29/78684 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/165 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848

摘要： By forming a deep recess through the buried insulating layer and re-growing a strained semiconductor material, an enhanced strain generation mechanism may be provided in SOI-like transistors. Consequently, the strain may also be efficiently created by the embedded strained semiconductor material across the entire active layer, thereby significantly enhancing the performance of transistor devices, in which two channel regions may be defined.

摘要翻译： 通过形成通过掩埋绝缘层的深凹槽并重新生长应变半导体材料，可以在SOI类晶体管中提供增强的应变产生机制。 因此，也可以通过整个有源层上的嵌入的应变半导体材料有效地产生应变，从而显着提高可以限定两个沟道区的晶体管器件的性能。

公开(公告)号：US20070254441A1

公开(公告)日：2007-11-01

申请号：US11566287

申请日：2006-12-04

申请人： Andy Wei ,  Thorsten Kammler ,  Jan Hoentschel ,  Manfred Horstmann

发明人： Andy Wei ,  Thorsten Kammler ,  Jan Hoentschel ,  Manfred Horstmann

IPC分类号： H01L21/336

CPC分类号： H01L29/66621 ,  H01L29/165 ,  H01L29/66583 ,  H01L29/7834 ,  H01L29/7848

摘要： A method of forming a field effect transistor comprises providing a substrate comprising a biaxially strained layer of a semiconductor material. A gate electrode is formed on the biaxially strained layer of semiconductor material. A raised source region and a raised drain region are formed adjacent the gate electrode. Ions of a dopant material are implanted into the raised source region and the raised drain region to form an extended source region and an extended drain region. Moreover, in methods of forming a field effect transistor according to embodiments of the present invention, a gate electrode can be formed in a recess of a layer of semiconductor material. Thus, a field effect transistor wherein a source side channel contact region and a drain side channel contact region located adjacent a channel region are subject to biaxial strain can be obtained.

摘要翻译： 形成场效应晶体管的方法包括提供包括半导体材料的双轴应变层的衬底。 在半导体材料的双轴应变层上形成栅电极。 在栅电极附近形成凸起的源区和升高的漏极区。 将掺杂剂材料的离子注入到凸起的源极区域和隆起的漏极区域中，以形成扩展的源极区域和延伸的漏极区域。 此外，在形成根据本发明的实施例的场效应晶体管的方法中，可以在半导体材料层的凹部中形成栅电极。 因此，可以获得其中位于沟道区附近的源极侧沟道接触区域和漏极侧沟道接触区域受到双轴应变的场效应晶体管。

公开(公告)号：US08440516B2

公开(公告)日：2013-05-14

申请号：US12752487

申请日：2010-04-01

申请人： Andy Wei ,  Thorsten Kammler ,  Jan Hoentschel ,  Manfred Horstmann

发明人： Andy Wei ,  Thorsten Kammler ,  Jan Hoentschel ,  Manfred Horstmann

IPC分类号： H01L21/8234

CPC分类号： H01L29/66621 ,  H01L29/165 ,  H01L29/66583 ,  H01L29/7834 ,  H01L29/7848

摘要： A method of forming a field effect transistor comprises providing a substrate comprising a biaxially strained layer of a semiconductor material. A gate electrode is formed on the biaxially strained layer of semiconductor material. A raised source region and a raised drain region are formed adjacent the gate electrode. Ions of a dopant material are implanted into the raised source region and the raised drain region to form an extended source region and an extended drain region. Moreover, in methods of forming a field effect transistor according to embodiments of the present invention, a gate electrode can be formed in a recess of a layer of semiconductor material. Thus, a field effect transistor wherein a source side channel contact region and a drain side channel contact region located adjacent a channel region are subject to biaxial strain can be obtained.

摘要翻译： 形成场效应晶体管的方法包括提供包括半导体材料的双轴应变层的衬底。 在半导体材料的双轴应变层上形成栅电极。 在栅电极附近形成凸起的源区和升高的漏极区。 将掺杂剂材料的离子注入到凸起的源极区域和隆起的漏极区域中，以形成扩展的源极区域和延伸的漏极区域。 此外，在形成根据本发明的实施例的场效应晶体管的方法中，可以在半导体材料层的凹部中形成栅电极。 因此，可以获得其中位于沟道区附近的源极侧沟道接触区域和漏极侧沟道接触区域受到双轴应变的场效应晶体管。