摘要:
Consistent ultraviolet (UV) intensity for a semiconductor UV cure chamber is measured in-situ with a hot pedestal in vacuum by measuring reflected UV light from a calibration substrate at a UV detector mounted in the lamp assembly. The measurement apparatus includes a UV detector, a cover that protects the detector from UV light while not in use, and a mirror disposed between the chamber window and the UV detector. Measured UV intensity from the substrate reflection and from the mirror reflection help determine a course of maintenance action to maintain wafer-to-wafer uniformity.
摘要:
A single wafer cleaning chamber that includes a rotatable bracket that can place a wafer beneath an upper end of a catch cup during a wafer cleaning process, a gutter positioned above a wafer transfer slit; where the catch cup can mate with the gutter to create a gap, and with the upper end of the catch cup positioned at a height equal to or higher than the gutter.
摘要:
During a wafer process, fragments can break away from a wafer. The wafer fragments can compromise the accuracy of the temperature signals generated by sensor probes in a rapid thermal process. In particular, the fragments can attenuate or otherwise interfere with the radiation received from the wafer. This interference can undermine the accuracy of the temperature measurement signal generated by the probes. If the temperature control function is compromised, excessive temperature gradients can result in damage to the wafer, reducing device yield and degrading device quality. To alleviate the effects of wafer fragments, the presence of a wafer fragment is detected. An image acquisition device acquires an image of an area adjacent the sensor probe. A processor analyzes the acquired image to determine whether a wafer fragment is present. One approach involves comparing the acquired image to a reference image taken in the absence of a wafer fragment quantifying the amount of deviation. Another approach involves analyzing the acquired image for optical density contrast changes indicative of the presence of a wafer fragment. Detection of a wafer fragment allows the rapid thermal process to be stopped so that the fragment can be cleared away, either manually or automatically, prior to insertion of the next wafer into the chamber.