Measuring in-situ UV intensity in UV cure tool
    11.
    发明授权
    Measuring in-situ UV intensity in UV cure tool 有权
    测量UV固化工具中的原位紫外线强度

    公开(公告)号:US07935940B1

    公开(公告)日:2011-05-03

    申请号:US12008149

    申请日:2008-01-08

    申请人: Eugene Smargiassi

    发明人: Eugene Smargiassi

    IPC分类号: H01J37/00

    摘要: Consistent ultraviolet (UV) intensity for a semiconductor UV cure chamber is measured in-situ with a hot pedestal in vacuum by measuring reflected UV light from a calibration substrate at a UV detector mounted in the lamp assembly. The measurement apparatus includes a UV detector, a cover that protects the detector from UV light while not in use, and a mirror disposed between the chamber window and the UV detector. Measured UV intensity from the substrate reflection and from the mirror reflection help determine a course of maintenance action to maintain wafer-to-wafer uniformity.

    摘要翻译: 通过在安装在灯组件中的UV检测器处测量来自校准基板的反射的UV光,在真空中通过热底座原位测量半导体UV固化室的一致的紫外(UV)强度。 测量装置包括UV检测器,在不使用时保护检测器免受UV光的盖以及设置在室窗和UV检测器之间的反射镜。 从基板反射和镜面反射测量的UV强度有助于确定保持晶片到晶片均匀性的维护过程。

    Detection of wafer fragments in a wafer processing apparatus
    13.
    发明授权
    Detection of wafer fragments in a wafer processing apparatus 失效
    晶片处理装置中晶片碎片的检测

    公开(公告)号:US06535628B2

    公开(公告)日:2003-03-18

    申请号:US09173665

    申请日:1998-10-15

    IPC分类号: G06K962

    摘要: During a wafer process, fragments can break away from a wafer. The wafer fragments can compromise the accuracy of the temperature signals generated by sensor probes in a rapid thermal process. In particular, the fragments can attenuate or otherwise interfere with the radiation received from the wafer. This interference can undermine the accuracy of the temperature measurement signal generated by the probes. If the temperature control function is compromised, excessive temperature gradients can result in damage to the wafer, reducing device yield and degrading device quality. To alleviate the effects of wafer fragments, the presence of a wafer fragment is detected. An image acquisition device acquires an image of an area adjacent the sensor probe. A processor analyzes the acquired image to determine whether a wafer fragment is present. One approach involves comparing the acquired image to a reference image taken in the absence of a wafer fragment quantifying the amount of deviation. Another approach involves analyzing the acquired image for optical density contrast changes indicative of the presence of a wafer fragment. Detection of a wafer fragment allows the rapid thermal process to be stopped so that the fragment can be cleared away, either manually or automatically, prior to insertion of the next wafer into the chamber.

    摘要翻译: 在晶片工艺期间,碎片可以从晶片脱离。 晶片碎片可能会影响传感器探头在快速热处理过程中产生的温度信号的精确度。 特别地,碎片可以衰减或以其他方式干扰从晶片接收的辐射。 这种干扰可能会破坏由探头产生的温度测量信号的精度。 如果温度控制功能受损,过度的温度梯度可能会导致晶片损坏,降低设备产量并降低设备质量。 为了减轻晶片碎片的影响,检测到晶片片段的存在。 图像采集装置获取与传感器探针相邻的区域的图像。 处理器分析所获取的图像以确定晶片碎片是否存在。 一种方法包括将所获取的图像与在不存在限制偏差量的晶片片段的情况下拍摄的参考图像进行比较。 另一种方法涉及分析所获得的图像以获得指示晶片片段存在的光密度对比度变化。 晶片片段的检测允许快速热处理被停止,使得在将下一个晶片插入腔室之前,片段可以手动或自动清除。