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1.发明授权Gutter and splash-guard for protecting a wafer during transfer from a single wafer cleaning chamber 失效沟槽和防溅罩，用于在从单个晶片清洁室传输过程中保护晶片公开(公告)号：US06807972B2
公开(公告)日：2004-10-26
申请号：US10113495
申请日：2002-03-29
IPC分类号： B08B302
CPC分类号： H01L21/67051 , B08B3/02 , B08B17/00 , Y10S134/902
摘要： A single wafer cleaning chamber that includes a rotatable bracket that can place a wafer beneath an upper end of a catch cup during a wafer cleaning process, a gutter positioned above a wafer transfer slit; where the catch cup can mate with the gutter to create a gap, and with the upper end of the catch cup positioned at a height equal to or higher than the gutter.
摘要翻译： 单晶片清洗室，其包括可旋转支架，其可在晶片清洁过程中将晶片放置在捕捉杯的上端下方，位于晶片转移狭缝上方的沟槽; 捕捉杯可以与沟槽匹配以产生间隙，并且捕捉杯的上端位于等于或高于沟槽的高度。
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2.发明授权公开(公告)号：US08183132B2
公开(公告)日：2012-05-22
申请号：US12751692
申请日：2010-03-31
申请人： Sandeep Nijhawan , Brian H. Burrows , Tetsuya Ishikawa , Olga Kryliouk , Anand Vasudev , Jie Su , David H. Quach , Anzhong Chang , Yuriy Melnik , Harsukhdeep S. Ratia , Son T. Nguyen , Lily Pang
发明人： Sandeep Nijhawan , Brian H. Burrows , Tetsuya Ishikawa , Olga Kryliouk , Anand Vasudev , Jie Su , David H. Quach , Anzhong Chang , Yuriy Melnik , Harsukhdeep S. Ratia , Son T. Nguyen , Lily Pang
CPC分类号： H01L21/67109 , C30B25/02 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/67115 , H01L21/67167 , H01L21/67207 , H01L33/007
摘要： The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure comprising forming a first layer comprising a first group-III element and nitrogen on substrates in a first processing chamber by a hydride vapor phase epitaxial (HVPE) process or a metal organic chemical vapor deposition (MOCVD) process, forming a second layer comprising a second group-III element and nitrogen over the first layer in a second processing chamber by a MOCVD process, and forming a third layer comprising a third group-III element and nitrogen over the second layer by a MOCVD process.
摘要翻译： 本发明总体上提供了用于形成LED结构的装置和方法。 本发明的一个实施方案提供了一种用于制造氮化物复合结构的方法，其包括通过氢化物气相外延（HVPE）工艺或金属有机物在第一处理室中在衬底上形成包含第一III族元素的氮和氮 化学气相沉积（MOCVD）工艺，通过MOCVD工艺在第二处理室中在第一层上形成包含第二组III元素的第二层和氮，并且形成包含第三族III族元素和氮的第三层 第二层通过MOCVD过程。
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公开(公告)号：US20100215854A1
公开(公告)日：2010-08-26
申请号：US12776351
申请日：2010-05-07
申请人： Brian H. Burrows , Alexander Tam , Ronald Stevens , Jacob Grayson , Kenric T. Choi , Sumedh Acharya , Sandeep Nijhawan , Olga Kryliouk , Yuriy Melnik
发明人： Brian H. Burrows , Alexander Tam , Ronald Stevens , Jacob Grayson , Kenric T. Choi , Sumedh Acharya , Sandeep Nijhawan , Olga Kryliouk , Yuriy Melnik
IPC分类号： C23C16/455 , C23C16/00 , C23C16/08
CPC分类号： C23C16/4488 , C23C16/45502 , C23C16/45512 , C23C16/45565 , C23C16/4557 , C23C16/45574 , C23C16/45578 , C30B25/14 , C30B29/403 , Y10T117/10
摘要： A method and apparatus that may be utilized in deposition processes, such as hydride vapor phase epitaxial (HVPE) deposition of metal nitride films, are provided. A first set of passages may introduce a metal containing precursor gas. A second set of passages may provide a nitrogen-containing precursor gas. The first and second sets of passages may be interspersed in an effort to separate the metal containing precursor gas and nitrogen-containing precursor gas until they reach a substrate. An inert gas may also be flowed down through the passages to help keep separation and limit reaction at or near the passages, thereby preventing unwanted deposition on the passages.
摘要翻译： 提供了可用于沉积工艺的方法和装置，例如金属氮化物膜的氢化物气相外延（HVPE）沉积。 第一组通道可以引入含金属的前体气体。 第二组通道可以提供含氮前体气体。 第一组和第二组通道可以散布，以分离含金属的前体气体和含氮前体气体，直到它们到达基底。 惰性气体也可以通过通道向下流动，以帮助保持分离并限制通道处或附近的反应，从而防止通道上的不希望的沉积。
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公开(公告)号：US07976631B2
公开(公告)日：2011-07-12
申请号：US11873132
申请日：2007-10-16
申请人： Brian H. Burrows , Alexander Tam , Ronald Stevens , Kenric T. Choi , James D. Felsch , Jacob Grayson , Sumedh Acharya , Sandeep Nijhawan , Lori D. Washington , Nyi O. Myo
发明人： Brian H. Burrows , Alexander Tam , Ronald Stevens , Kenric T. Choi , James D. Felsch , Jacob Grayson , Sumedh Acharya , Sandeep Nijhawan , Lori D. Washington , Nyi O. Myo
IPC分类号： C23C16/00 , C23C16/455 , H01L21/306 , H01L21/3065
CPC分类号： C23C16/45565 , C23C16/45514 , C23C16/45519 , C23C16/45574 , C23C16/45578 , C30B25/14 , C30B29/403 , Y10T137/0318 , Y10T137/87153
摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.
摘要翻译： 提供了可用于化学气相沉积和/或氢化物气相外延（HVPE）沉积的方法和装置。 在一个实施例中，使用金属有机化学气相沉积（MOCVD）工艺在多个基板上沉积III族氮化物膜。 将III族前体，例如三甲基镓，三甲基铝或三甲基铟，以及含氮前体，例如氨，被输送到多个分离前体气体的直通道。 将前体气体注入到混合通道中，在混合通道中气体被混合，然后进入含有底物的处理体积。 提供热交换通道用于混合通道的温度控制，以防止不希望的前体的冷凝和反应。
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公开(公告)号：US20110049779A1
公开(公告)日：2011-03-03
申请号：US12871143
申请日：2010-08-30
申请人： GLEN ERIC EGAMI , Brian H. Burrows , Kyawwin Maung
发明人： GLEN ERIC EGAMI , Brian H. Burrows , Kyawwin Maung
CPC分类号： H01L21/6875 , C23C16/4583 , C23C16/46 , H01L21/68735 , H01L21/68771 , Y10T29/49998
摘要： Embodiments of the present invention relate to methods and apparatus for supporting substrates during processing. One embodiment of the present invention provides a substrate carrier comprising a body configured to provide structure support to one or more substrates. One or more pockets are formed in the body from a top surface. Each pocket is configured to retain one substrate by contacting only a portion of a back side of the substrate. Each pocket has a bottom surface and sidewalls surrounding the bottom surface. The sidewalls define an opening larger than a surface area of the substrate so that at least a majority portion of a bevel edge of the substrate is not in contact with the sidewalls.
摘要翻译： 本发明的实施例涉及在处理过程中支撑衬底的方法和装置。 本发明的一个实施例提供了一种衬底载体，其包括被配置为向一个或多个衬底提供结构支撑的主体。 从顶面在身体中形成一个或多个口袋。 每个袋被构造成通过仅接触基板的背面的一部分来保持一个基板。 每个口袋具有底表面和围绕底表面的侧壁。 侧壁限定大于衬底的表面积的开口，使得衬底的斜边缘的至少大部分部分不与侧壁接触。
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公开(公告)号：US20100261340A1
公开(公告)日：2010-10-14
申请号：US12751692
申请日：2010-03-31
申请人： SANDEEP NIJHAWAN , Brian H. Burrows , Tetsuya Ishikawa , Olga Kryliouk , Anand Vasudev , Jie Su , David H. Quach , Anzhong Chang , Yuriy Melnik , Harsukhdeep S. Ratia , Son T. Nguyen , Lily Pang
发明人： SANDEEP NIJHAWAN , Brian H. Burrows , Tetsuya Ishikawa , Olga Kryliouk , Anand Vasudev , Jie Su , David H. Quach , Anzhong Chang , Yuriy Melnik , Harsukhdeep S. Ratia , Son T. Nguyen , Lily Pang
IPC分类号： H01L21/205
CPC分类号： H01L21/67109 , C30B25/02 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/67115 , H01L21/67167 , H01L21/67207 , H01L33/007
摘要： The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure comprising forming a first layer comprising a first group-III element and nitrogen on substrates in a first processing chamber by a hydride vapor phase epitaxial (HVPE) process or a metal organic chemical vapor deposition (MOCVD) process, forming a second layer comprising a second group-III element and nitrogen over the first layer in a second processing chamber by a MOCVD process, and forming a third layer comprising a third group-III element and nitrogen over the second layer by a MOCVD process.
摘要翻译： 本发明总体上提供了用于形成LED结构的装置和方法。 本发明的一个实施方案提供了一种用于制造氮化物复合结构的方法，其包括通过氢化物气相外延（HVPE）工艺或金属有机物在第一处理室中在衬底上形成包含第一III族元素的氮和氮 化学气相沉积（MOCVD）工艺，通过MOCVD工艺在第二处理室中在第一层上形成包含第二组III元素的第二层和氮，并且形成包含第三族III族元素和氮的第三层 第二层通过MOCVD过程。
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7.发明申请公开(公告)号：US20110076400A1
公开(公告)日：2011-03-31
申请号：US12888302
申请日：2010-09-22
申请人： Olga Kryliouk , Yuriy Melnik , Brian H. Burrows , Ronald Stevens , Jacob Grayson , Sandeep Nijhawan
发明人： Olga Kryliouk , Yuriy Melnik , Brian H. Burrows , Ronald Stevens , Jacob Grayson , Sandeep Nijhawan
CPC分类号： C23C16/4404
摘要： One embodiment of the forming a nanocrystalline diamond-structured carbon layer on a silicon carbide layer comprises providing a silicon carbide layer in a reaction chamber and exposing the silicon carbide layer to a chlorine containing gas for an exposure time period to form a nanocrystalline diamond-structured carbon layer from the silicon carbide layer.
摘要翻译： 在碳化硅层上形成纳米晶体金刚石结构碳层的一个实施例包括在反应室中提供碳化硅层，并将碳化硅层暴露于含氯气体的曝光时间段以形成纳米晶体金刚石结构 碳层从碳化硅层。
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公开(公告)号：US07704327B2
公开(公告)日：2010-04-27
申请号：US10261391
申请日：2002-09-30
CPC分类号： C23C16/4585
摘要： A method including removing an impurity from a gas stream to a processing chamber at a point of use. An apparatus with a point of use purifier on a gas stream. An apparatus including a shelf having dimensions suitable for placement within a thermal processing including a body of a material that renders the body opaque to radiation frequency range used for a temperature measurement of a substrate in a thermal processing chamber.
摘要翻译： 一种方法，包括在使用点从气流中除去杂质至处理室。 在气流上具有使用点净化器的装置。 一种装置，其包括适于放置在热处理中的尺寸的搁板，该热处理包括使得身体不透明于用于在热处理室中的基板的温度测量的辐射频率范围的材料的主体。
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公开(公告)号：US5864595A
公开(公告)日：1999-01-26
申请号：US853280
申请日：1997-05-09
CPC分类号： G21C19/00 , G21C17/01 , G21C19/207 , G21Y2002/202 , G21Y2002/203 , G21Y2002/204 , G21Y2002/205 , G21Y2002/208 , G21Y2002/304 , G21Y2002/401 , G21Y2002/501 , G21Y2004/501 , G21Y2004/504
摘要： An actuator for performing work in a nuclear reactor is described. In one embodiment, the actuator includes an x-axis linear slide assembly, a y-axis linear slide assembly, and a z-axis linear slide assembly. The x-axis linear slide assembly is mounted to a junction box, the y-axis linear slide assembly is mounted on a carriage of the x-axis assembly, and the z-axis linear slide assembly is mounted on a carriage of the y-axis assembly. The actuator also includes motor assemblies coupled to respective linear slide assemblies. Each motor assembly includes a motor and a resolver sealed in a leakproof can. Pulley-timing belt assemblies couple each motor to a respective lead screw. Specifically, a drive pulley is connected to a rotor shaft of each motor, and a lead screw pulley is secured to an end of each lead screw. Each pulley-timing belt assembly also includes an idler pulley, and a belt extends around the lead screw pulley, the idler pulley, and the drive pulley. The motor assemblies are mounted so that the axis of each motor is substantially parallel to the axis the respective lead screw. By mounting motor assemblies in this configuration, the overall dimensions of the actuator are believed to be minimized when each slide assembly is fully retracted. The actuator further includes a delivery system interface for firmly attaching the actuator to a delivery system, and a tool mounting platform attached to the z-axis linear slide assembly. Threaded openings are located on the platform face and are used to secure various attachments to the platform. Many different attachments, such as an ultrasonic inspection unit, a brushing unit, and an electrical discharge machine (EDM) unit, can be secured to the platform.
摘要翻译： 描述了用于在核反应堆中进行工作的致动器。 在一个实施例中，致动器包括x轴线性滑动组件，y轴线性滑动组件和z轴线性滑动组件。 x轴线性滑动组件安装到接线盒，y轴线性滑块组件安装在x轴组件的滑架上，z轴线性滑块组件安装在y轴线性滑块组件的滑架上， 轴组件。 致动器还包括联接到相应的线性滑动组件的马达组件。 每个电动机组件包括电动机和密封在防漏罐中的旋转变压器。 皮带轮定时皮带组件将每个电机连接到相应的导螺杆。 具体地说，驱动皮带轮连接到每个马达的转子轴上，并且导螺杆滑轮固定在每个导螺杆的端部。 每个滑轮同步皮带组件还包括惰轮，并且皮带围绕导螺杆滑轮，惰轮和驱动皮带轮延伸。 马达组件被安装成使得每个马达的轴线基本上平行于相应导螺杆的轴线。 通过将电机组件安装在这种构造中，当每个滑动组件完全缩回时，认为致动器的总体尺寸被最小化。 致动器还包括用于将致动器牢固地附接到输送系统的输送系统接口，以及附接到z轴线性滑动组件的工具安装平台。 螺纹开口位于平台面上，用于将各种附件固定在平台上。 许多不同的附件，例如超声波检查单元，刷洗单元和放电机（EDM）单元可以固定到平台上。
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公开(公告)号：US08481118B2
公开(公告)日：2013-07-09
申请号：US13181431
申请日：2011-07-12
申请人： Brian H. Burrows , Alexander Tam , Ronald Stevens , Kenric T. Choi , James D. Felsch , Jacob Grayson , Sumedh Acharya , Sandeep Nijhawan , Lori D. Washington , Nyi O. Myo
发明人： Brian H. Burrows , Alexander Tam , Ronald Stevens , Kenric T. Choi , James D. Felsch , Jacob Grayson , Sumedh Acharya , Sandeep Nijhawan , Lori D. Washington , Nyi O. Myo
IPC分类号： C23C16/00 , C23C16/06 , C23C16/08 , C23C16/455
CPC分类号： C23C16/45565 , C23C16/45514 , C23C16/45519 , C23C16/45574 , C23C16/45578 , C30B25/14 , C30B29/403 , Y10T137/0318 , Y10T137/87153
摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.
摘要翻译： 提供了可用于化学气相沉积和/或氢化物气相外延（HVPE）沉积的方法和装置。 在一个实施例中，使用金属有机化学气相沉积（MOCVD）工艺在多个基板上沉积III族氮化物膜。 将III族前体，例如三甲基镓，三甲基铝或三甲基铟，以及含氮前体，例如氨，被输送到多个分离前体气体的直通道。 将前体气体注入到混合通道中，在混合通道中气体被混合，然后进入含有底物的处理体积。 提供热交换通道用于混合通道的温度控制，以防止不希望的前体的冷凝和反应。
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