公开(公告)号：US06535628B2

公开(公告)日：2003-03-18

申请号：US09173665

申请日：1998-10-15

申请人： Eugene Smargiassi ,  Wayez R. Ahmad

发明人： Eugene Smargiassi ,  Wayez R. Ahmad

IPC分类号： G06K962

CPC分类号： G06T7/0008 ,  G06T7/001 ,  G06T2207/30148

摘要： During a wafer process, fragments can break away from a wafer. The wafer fragments can compromise the accuracy of the temperature signals generated by sensor probes in a rapid thermal process. In particular, the fragments can attenuate or otherwise interfere with the radiation received from the wafer. This interference can undermine the accuracy of the temperature measurement signal generated by the probes. If the temperature control function is compromised, excessive temperature gradients can result in damage to the wafer, reducing device yield and degrading device quality. To alleviate the effects of wafer fragments, the presence of a wafer fragment is detected. An image acquisition device acquires an image of an area adjacent the sensor probe. A processor analyzes the acquired image to determine whether a wafer fragment is present. One approach involves comparing the acquired image to a reference image taken in the absence of a wafer fragment quantifying the amount of deviation. Another approach involves analyzing the acquired image for optical density contrast changes indicative of the presence of a wafer fragment. Detection of a wafer fragment allows the rapid thermal process to be stopped so that the fragment can be cleared away, either manually or automatically, prior to insertion of the next wafer into the chamber.

摘要翻译： 在晶片工艺期间，碎片可以从晶片脱离。 晶片碎片可能会影响传感器探头在快速热处理过程中产生的温度信号的精确度。 特别地，碎片可以衰减或以其他方式干扰从晶片接收的辐射。 这种干扰可能会破坏由探头产生的温度测量信号的精度。 如果温度控制功能受损，过度的温度梯度可能会导致晶片损坏，降低设备产量并降低设备质量。 为了减轻晶片碎片的影响，检测到晶片片段的存在。 图像采集装置获取与传感器探针相邻的区域的图像。 处理器分析所获取的图像以确定晶片碎片是否存在。 一种方法包括将所获取的图像与在不存在限制偏差量的晶片片段的情况下拍摄的参考图像进行比较。 另一种方法涉及分析所获得的图像以获得指示晶片片段存在的光密度对比度变化。 晶片片段的检测允许快速热处理被停止，使得在将下一个晶片插入腔室之前，片段可以手动或自动清除。

公开(公告)号：US08629068B1

公开(公告)日：2014-01-14

申请号：US13886694

申请日：2013-05-03

申请人： Krishnan Shrinivasan ,  Michael Rivkin ,  Eugene Smargiassi ,  Mohamed Sabri

发明人： Krishnan Shrinivasan ,  Michael Rivkin ,  Eugene Smargiassi ,  Mohamed Sabri

IPC分类号： H01L21/00 ,  H01L21/331 ,  C08F2/46 ,  B05D3/06

CPC分类号： H01L21/02348 ,  C23C16/345 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/0217 ,  H01L21/02203 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/3105 ,  H01L21/67115 ,  H01L21/68764 ,  H01L21/68771

摘要： The present invention addresses provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multiple operation ultraviolet curing processes in which UV intensity, wafer substrate temperature and other conditions may be independently modulated in each operation. In certain embodiments, a film containing a structure former and a porogen is exposed to UV radiation in a first operation to facilitate removal of the porogen and create a porous dielectric film. In a second operation, the film is exposed to UV radiation to increase cross-linking within the porous film. In certain embodiments, the curing takes place in a multi-station UV chamber wherein UV intensity and substrate temperature may be independently controlled at each station.

摘要翻译： 本发明提供了在衬底上制备低k电介质材料的改进方法。 该方法涉及多次操作紫外线固化过程，其中UV强度，晶片衬底温度和其它条件可在每次操作中独立调制。 在某些实施方案中，在第一操作中将包含结构形成剂和致孔剂的膜暴露于UV辐射以便于去除致孔剂并产生多孔介电膜。 在第二操作中，该膜暴露于UV辐射以增加多孔膜内的交联。 在某些实施例中，固化发生在多工位UV室中，其中UV强度和衬底温度可以在每个工位单独控制。

公开(公告)号：US08518210B2

公开(公告)日：2013-08-27

申请号：US13562421

申请日：2012-07-31

申请人： Eugene Smargiassi ,  Stephen Yu-Hong Lau ,  George D. Kamian ,  Ming Xi

发明人： Eugene Smargiassi ,  Stephen Yu-Hong Lau ,  George D. Kamian ,  Ming Xi

IPC分类号： C23F1/00 ,  H01L21/306

CPC分类号： H01L21/67115 ,  H01L21/02041 ,  H01L21/02203 ,  H01L21/02348 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67207

摘要： An apparatus for purging a space in a processing chamber comprises a source of a purge gas; an inlet portion of a purge ring; an inlet baffle located in the inlet portion and fluidically connected to the source of purge gas; and an exhaust portion of the purge ring. The inlet portion and the exhaust portion define a ring hole space having a 360° periphery. The inlet baffle preferably surrounds not less than 180° of said periphery. The inlet baffle is operable to convey purge gas into the ring hole space. The exhaust portion is operable to convey purge gas and other matter out of the ring hole space. Cleaning of the purge ring and other structures in a processing chamber is conducted by flowing a cleaning gas through the inlet baffle. Some embodiments include a gas inlet plenum and an exhaust channel but not a purge ring.

摘要翻译： 用于清洗处理室中的空间的装置包括净化气体源; 清洗环的入口部分; 入口挡板，其位于入口部分中并且流体连接到吹扫气体源; 和净化环的排气部分。 入口部分和排气部分限定具有360°周边的环孔空间。 入口挡板优选地围绕所述周边不小于180°。 入口挡板可操作以将清洗气体输送到环孔空间中。 排气部分可操作以将净化气体和其它物质输送出环孔空间。 通过使清洁气体流过入口挡板来进行清洁环和处理室中的其它结构的清洁。 一些实施例包括气体入口增压室和排气通道，但不包括净化环。

公开(公告)号：US08282768B1

公开(公告)日：2012-10-09

申请号：US12586175

申请日：2009-09-18

申请人： Eugene Smargiassi ,  Stephen Yu-Hong Lau ,  George D. Kamian ,  Ming Xi

发明人： Eugene Smargiassi ,  Stephen Yu-Hong Lau ,  George D. Kamian ,  Ming Xi

IPC分类号： C23F1/00 ,  H01L21/306

CPC分类号： H01L21/67115 ,  H01L21/02041 ,  H01L21/02203 ,  H01L21/02348 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67207

摘要： An apparatus for purging a space in a processing chamber comprises a source of a purge gas; an inlet portion of a purge ring; an inlet baffle located in the inlet portion and fluidically connected to the source of purge gas; and an exhaust portion of the purge ring. The inlet portion and the exhaust portion define a ring hole space having a 360° periphery. The inlet baffle preferably surrounds not less than 180° of said periphery. The inlet baffle is operable to convey purge gas into the ring hole space. The exhaust portion is operable to convey purge gas and other matter out of the ring hole space. Cleaning of the purge ring and other structures in a processing chamber is conducted by flowing a cleaning gas through the inlet baffle. Methods and systems using a purge ring are particularly useful for purging and cleaning porogens from a UV curing chamber. Some embodiments include a gas inlet plenum and an exhaust channel but not a purge ring.

摘要翻译： 用于清洗处理室中的空间的装置包括净化气体源; 清洗环的入口部分; 入口挡板，其位于入口部分中并且流体连接到吹扫气体源; 和净化环的排气部分。 入口部分和排气部分限定具有360°周边的环孔空间。 入口挡板优选地围绕所述周边不小于180°。 入口挡板可操作以将清洗气体输送到环孔空间中。 排气部分可操作以将净化气体和其它物质输送出环孔空间。 通过使清洁气体流过入口挡板来进行清洁环和处理室中的其它结构的清洁。 使用清洗环的方法和系统特别适用于清洗和清洁紫外线固化室中的致孔剂。 一些实施例包括气体入口增压室和排气通道，但不包括净化环。

公开(公告)号：US06231716B1

公开(公告)日：2001-05-15

申请号：US09188872

申请日：1998-11-09

申请人： Anthony White ,  Eugene Smargiassi

发明人： Anthony White ,  Eugene Smargiassi

IPC分类号： B65G4907

CPC分类号： H01L21/67748 ,  Y10S414/135 ,  Y10S414/137 ,  Y10S414/139

摘要： An apparatus for processing substrates includes a chamber, a substrate transfer element for transferring a substrate to and from the chamber, and a substrate support for receiving and holding a substrate within the chamber. The apparatus also includes multiple pins positioned and configured to be received by respective holes in the chamber bottom and moveable between a retracted position and an extended position. A pin actuation system is provided for moving the pins between the retracted position and the extended position. The pin actuation system controls the velocity at which the pins move and varies the speed of the pins by accelerating or decelerating at particular points during the pin cycle. A reduction in the cycle time is facilitated by accelerating the lift pins to relatively high speeds and then slowing the pins down prior to their arrival at locations where the substrate or wafer may be damaged. The throughput of the chamber can be increased, the likelihood of damage to the substrate can be reduced, and bouncing of the substrate while supported by the pins can be reduced.

摘要翻译： 一种用于处理衬底的设备包括：室，用于将衬底传送到腔室的衬底传送元件和用于在腔室内接收和保持衬底的衬底支撑件。 该装置还包括定位和构造成由腔室底部中的相应孔容纳并且可在缩回位置和延伸位置之间移动的多个销。 提供销致动系统，用于在缩回位置和伸出位置之间移动销。 引脚驱动系统控制引脚移动的速度，并通过在引脚周期内的特定点加速或减速来改变引脚的速度。 通过将提升销加速到相对较高的速度，然后在它们到达衬底或晶片可能被损坏的位置之前将销降低速度来减轻循环时间的减少。 可以提高室的通过量，可以减少对基板的损坏的可能性，并且可以减少由引脚支撑的基板的弹跳。

公开(公告)号：US08980769B1

公开(公告)日：2015-03-17

申请号：US11977792

申请日：2007-10-25

申请人： Jason Haverkamp ,  Dennis Hausmann ,  Kevin McLaughlin ,  Krishnan Shrinivasan ,  Michael Rivkin ,  Eugene Smargiassi ,  Mohamed Sabri

发明人： Jason Haverkamp ,  Dennis Hausmann ,  Kevin McLaughlin ,  Krishnan Shrinivasan ,  Michael Rivkin ,  Eugene Smargiassi ,  Mohamed Sabri

IPC分类号： H01L21/00 ,  H01L21/331

CPC分类号： C23C16/56 ,  C23C16/345 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/0217 ,  H01L21/02203 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/67115 ,  H01L21/68764 ,  H01L21/68771

摘要： The present invention provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multiple operation ultraviolet curing processes in which UV intensity, wafer substrate temperature, UV spectral distribution, and other conditions may be independently modulated in each operation. Operations may be pulsed or even be concurrently applied to the same wafer. In certain embodiments, a film containing a structure former and a porogen is exposed to UV radiation in a first operation to facilitate removal of the porogen and create a porous dielectric film. In a second operation, the film is exposed to UV radiation to increase cross-linking within the porous film.

摘要翻译： 本发明提供了在衬底上制备低k介电材料的改进方法。 该方法涉及多种操作紫外线固化方法，其中UV强度，晶片衬底温度，UV光谱分布和其它条件可以在每个操作中独立调制。 可以将脉冲或甚至同时施​​加到同一晶片上。 在某些实施方案中，在第一操作中将包含结构形成剂和致孔剂的膜暴露于UV辐射以便于去除致孔剂并产生多孔介电膜。 在第二操作中，该膜暴露于UV辐射以增加多孔膜内的交联。

公开(公告)号：US20130160946A1

公开(公告)日：2013-06-27

申请号：US13562421

申请日：2012-07-31

申请人： Eugene Smargiassi ,  Stephen Yu-Hong Lau ,  George D. Kamian ,  Ming Xi

发明人： Eugene Smargiassi ,  Stephen Yu-Hong Lau ,  George D. Kamian ,  Ming Xi

IPC分类号： H01L21/02

CPC分类号： H01L21/67115 ,  H01L21/02041 ,  H01L21/02203 ,  H01L21/02348 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67207

摘要： An apparatus for purging a space in a processing chamber comprises a source of a purge gas; an inlet portion of a purge ring; an inlet baffle located in the inlet portion and fluidically connected to the source of purge gas; and an exhaust portion of the purge ring. The inlet portion and the exhaust portion define a ring hole space having a 360° periphery. The inlet baffle preferably surrounds not less than 180° of said periphery. The inlet baffle is operable to convey purge gas into the ring hole space. The exhaust portion is operable to convey purge gas and other matter out of the ring hole space. Cleaning of the purge ring and other structures in a processing chamber is conducted by flowing a cleaning gas through the inlet baffle. Some embodiments include a gas inlet plenum and an exhaust channel but not a purge ring.

摘要翻译： 用于清洗处理室中的空间的装置包括净化气体源; 清洗环的入口部分; 入口挡板，其位于入口部分中并且流体连接到吹扫气体源; 和净化环的排气部分。 入口部分和排气部分限定具有360°周边的环孔空间。 入口挡板优选地围绕所述周边不小于180°。 入口挡板可操作以将清洗气体输送到环孔空间中。 排气部分可操作以将净化气体和其它物质输送出环孔空间。 通过使清洁气体流过入口挡板来进行清洁环和处理室中的其它结构的清洁。 一些实施例包括气体入口增压室和排气通道，但不包括净化环。

公开(公告)号：US08283644B2

公开(公告)日：2012-10-09

申请号：US13070306

申请日：2011-03-23

申请人： Eugene Smargiassi ,  Boaz Kenane ,  James Lee ,  Xiaolan Chen

发明人： Eugene Smargiassi ,  Boaz Kenane ,  James Lee ,  Xiaolan Chen

IPC分类号： H01L21/30 ,  G03F7/00

CPC分类号： G01N21/33 ,  H01L21/67115 ,  H01L21/67248

摘要： Provided are improved apparatus and methods for radiative treatment. In some embodiments, a semiconductor processing apparatus for radiative cure includes a process chamber and a radiation assembly external to the process chamber. The radiation assembly transmits radiation into the chamber on a substrate holder through a chamber window. A radiation detector measures radiation intensity from time to time. The assembly includes a gas inlet and exhaust operable to flow a radiation-activatable cooling gas through the radiation assembly.

摘要翻译： 提供了用于辐射治疗的改进的装置和方法。 在一些实施例中，用于辐射固化的半导体处理装置包括处理室和处理室外部的辐射组件。 辐射组件通过腔室窗口将辐射传播到衬底保持器上的腔室中。 辐射探测器不时地测量辐射强度。 组件包括可操作以使可辐射致冷的冷却气体流过辐射组件的气体入口和排气口。

公开(公告)号：US20120161021A1

公开(公告)日：2012-06-28

申请号：US13070306

申请日：2011-03-23

申请人： Eugene Smargiassi ,  Boaz Kenane ,  James Lee ,  Xiaolan Chen

发明人： Eugene Smargiassi ,  Boaz Kenane ,  James Lee ,  Xiaolan Chen

IPC分类号： G01J1/42

CPC分类号： G01N21/33 ,  H01L21/67115 ,  H01L21/67248

摘要： Provided are improved apparatus and methods for radiative treatment. In some embodiments, a semiconductor processing apparatus for radiative cure includes a process chamber and a radiation assembly external to the process chamber. The radiation assembly transmits radiation into the chamber on a substrate holder through a chamber window. A radiation detector measures radiation intensity from time to time. The assembly includes a gas inlet and exhaust operable to flow a radiation-activatable cooling gas through the radiation assembly.

摘要翻译： 提供了用于辐射治疗的改进的装置和方法。 在一些实施例中，用于辐射固化的半导体处理装置包括处理室和处理室外部的辐射组件。 辐射组件通过腔室窗口将辐射传播到衬底保持器上的腔室中。 辐射探测器不时地测量辐射强度。 组件包括可操作以使可辐射致冷的冷却气体流过辐射组件的气体入口和排气口。

公开(公告)号：US06515261B1

公开(公告)日：2003-02-04

申请号：US10093275

申请日：2002-03-06

申请人： Eugene Smargiassi ,  Aaron Hunter

发明人： Eugene Smargiassi ,  Aaron Hunter

IPC分类号： F27B514

CPC分类号： H01L21/67248 ,  C23C16/4586 ,  C23C16/481 ,  C30B25/12

摘要： An apparatus and method for thermally processing a substrate employs lift pin for supporting or contacting the substrate while conveying radiation from the substrate to a detector and/or processor through a hollow member. The lift pin comprises a contact member flexibly mounted on the hollow member to adjust to the angle of the substrate. By conforming the orientation of the contact member to the angle of the substrate, accurate detection and processing of the substrate may be performed.

摘要翻译： 用于热处理衬底的装置和方法使用提升销来支撑或接触衬底，同时通过中空构件将辐射从衬底传送到检测器和/或处理器。 提升销包括柔性地安装在中空构件上的接触构件以适应基板的角度。 通过使接触部件的取向与基板的角度一致，可以进行基板的精确的检测和处理。