公开(公告)号：US20160042950A1

公开(公告)日：2016-02-11

申请号：US14818068

申请日：2015-08-04

Applicant: Applied Materials, Inc.

Inventor： Huixiong DAI ,  Christopher S. NGAI

IPC: H01L21/033

CPC classification number: H01L21/0337 ,  H01L21/0332

Abstract: Embodiments described herein generally relate to methods for device patterning. In various embodiments, a plurality of protrusions and gaps are formed on a substrate, and each gap is formed between adjacent protrusions. Each protrusion includes a first line, a second line and a third line. The first and third lines include a first material, and the second lines include a second material that is different from the first material. A fourth line is deposited in each gap and the fourth line includes a third material that is different than the first and second materials. Because the first, second and third materials are different, one or more lines can be removed by selective etching while adjacent lines that are made of a different material may not be covered by a mask. The critical dimensions (CD) and the edge displacement errors (EPE) of the mask are increased.

Abstract translation: 本文描述的实施例通常涉及用于器件图案化的方法。 在各种实施例中，在基板上形成多个突起和间隙，并且在相邻突起之间形成每个间隙。 每个突起包括第一线，第二线和第三线。 第一和第三线包括第一材料，第二线包括不同于第一材料的第二材料。 第四行沉积在每个间隙中，第四行包括与第一和第二材料不同的第三材料。 由于第一，第二和第三材料是不同的，可以通过选择性蚀刻去除一条或多条线，而由不同材料制成的相邻线可能不被掩模覆盖。 掩模的临界尺寸（CD）和边缘位移误差（EPE）增加。