中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

11 records (took 0.015 seconds)

    METHOD FOR FORMING A LAYER
    3.
    发明申请
    METHOD FOR FORMING A LAYER 审中-公开

    公开(公告)号：US20200161181A1

    公开(公告)日：2020-05-21

    申请号：US16669082

    申请日：2019-10-30

    Applicant: Applied Materials, Inc.

    Inventor： Wenhui WANG ,  Huixiong DAI ,  Christopher S. NGAI ,  Liqi WU ,  Wenyu ZHANG ,  Yongmei CHEN ,  Hao CHEN ,  Keith Tatseun WONG ,  Ke CHANG

    IPC: H01L21/768 ,  H01L23/535 ,  H01L21/033 ,  H01L21/02

    Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits, and more particularly, to methods for forming a layer. The layer may be a mask used in lithography process to pattern and form a trench. The mask is formed over a substrate having at least two distinct materials by a selective deposition process. The edges of the mask are disposed on an intermediate layer formed on at least one of the two distinct materials. The method includes removing the intermediate layer to form a gap between edges of the mask and the substrate and filling the gap with a different material than the mask or with the same material as the mask. By filling the gap with the same or different material as the mask, electrical paths are improved.

    ROLL TO ROLL WAFER BACKSIDE PARTICLE AND CONTAMINATION REMOVAL
    8.
    发明申请
    ROLL TO ROLL WAFER BACKSIDE PARTICLE AND CONTAMINATION REMOVAL 有权
    滚动滚筒后面的颗粒和污染物去除

    公开(公告)号：US20150371879A1

    公开(公告)日：2015-12-24

    申请号：US14476398

    申请日：2014-09-03

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Christopher S. NGAI ,  Huixiong DAI ,  Ludovic GODET ,  Ellie Y. YIEH

    IPC: H01L21/67 ,  B08B1/00

    CPC classification number: B08B1/001 ,  B08B1/00 ,  B08B1/008 ,  B08B6/00 ,  B08B7/0028 ,  H01L21/67028 ,  H01L21/67253 ,  H01L21/6831 ,  H01L21/68742

    Abstract: Particulate cleaning assemblies and methods for cleaning are disclosed. In one example, a device for removing particles from a backside surface of a substrate is described. The device includes a chamber body with a substrate chucking device, a particulate cleaning article positioned over the substrate supporting surface, an optical sensing device positioned under the particulate cleaning article and a substrate positioning device separates the particulate cleaning article and a substrate. In another example, a method for removing particles from a substrate is disclosed. The method includes positioning a substrate with a processing surface and a supporting surface in a process chamber. At least a portion of the substrate can be chucked to a substrate chucking device, the substrate chucking device having a substrate supporting surface with a particulate cleaning article positioned thereon. The substrate is then separated from the particulate cleaning article leaving particles behind.

    Abstract translation: 公开了微粒清洁组件和清洁方法。 在一个实例中，描述了用于从基板的背面去除颗粒的装置。 该装置包括具有衬底夹持装置的腔室主体，位于衬底支撑表面上方的微粒清洁制品，位于微粒清洁制品下方的光学感测装置和分离颗粒清洁制品和衬底的基板定位装置。 在另一个实例中，公开了一种从衬底去除颗粒的方法。 该方法包括将具有处理表面和支撑表面的基板定位在处理室中。 衬底的至少一部分可以被夹持到衬底夹紧装置，衬底夹持装置具有衬底支撑表面，其上定位有微粒清洁制品。 然后将基底与颗粒清洁制品分离，留下颗粒。

    METHOD FOR CRITICAL DIMENSION REDUCTION USING CONFORMAL CARBON FILMS
    10.
    发明申请
    METHOD FOR CRITICAL DIMENSION REDUCTION USING CONFORMAL CARBON FILMS 有权
    使用一致的碳膜减少关键尺寸的方法

    公开(公告)号：US20160049305A1

    公开(公告)日：2016-02-18

    申请号：US14799374

    申请日：2015-07-14

    Applicant: Applied Materials, Inc.

    Inventor： Bencherki MEBARKI ,  Bok Hoen KIM ,  Deenesh PADHI ,  Li Yan MIAO ,  Pramit MANNA ,  Christopher Dennis BENCHER ,  Mehul B. NAIK ,  Huixiong DAI ,  Christopher S. NGAI ,  Daniel Lee DIEHL

    IPC: H01L21/308 ,  H01L21/02 ,  H01L21/027 ,  H01L21/311

    CPC classification number: H01L21/3088 ,  H01L21/02115 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/31144

    Abstract: Embodiments of the disclosure generally provide a method of forming a reduced dimension pattern in a hardmask that is optically matched to an overlying photoresist layer. The method generally comprises of application of a dimension shrinking conformal carbon layer over the field region, sidewalls, and bottom portion of the patterned photoresist and the underlying hardmask at temperatures below the decomposition temperature of the photoresist. The methods and embodiments herein further involve removal of the conformal carbon layer from the bottom portion of the patterned photoresist and the hardmask by an etch process to expose the hardmask, etching the exposed hardmask substrate at the bottom portion, followed by the simultaneous removal of the conformal carbon layer, the photoresist, and other carbonaceous components. A hardmask with reduced dimension features for further pattern transfer is thus yielded.

    Abstract translation: 本公开的实施例通常提供在与上覆光致抗蚀剂层光学匹配的硬掩模中形成减小尺寸图案的方法。 该方法通常包括在低于光致抗蚀剂的分解温度的温度下，在图案化的光致抗蚀剂和下面的硬掩模的场区域，侧壁和底部上施加尺寸收缩的保形碳层。 本文的方法和实施例还涉及通过蚀刻工艺从图案化的光致抗蚀剂和硬掩模的底部部分去除保形碳层，以暴露硬掩模，在底部蚀刻暴露的硬掩模基板，随后同时去除 保形碳层，光致抗蚀剂等碳质成分。 因此产生了用于进一步模式转移的尺寸减小特征的硬掩模。

Patent Agency Ranking