公开(公告)号：US11538677B2

公开(公告)日：2022-12-27

申请号：US17009002

申请日：2020-09-01

Applicant: Applied Materials, Inc.

Inventor： Chuanxi Yang ,  Hang Yu ,  Yu Yang ,  Chuan Ying Wang ,  Allison Yau ,  Xinhai Han ,  Sanjay G. Kamath ,  Deenesh Padhi

IPC: H01L21/02 ,  C23C16/34

Abstract: Exemplary methods of semiconductor processing may include flowing a silicon-containing precursor, a nitrogen-containing precursor, and diatomic hydrogen into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may also include forming a plasma of the silicon-containing precursor, the nitrogen-containing precursor, and the diatomic hydrogen. The plasma may be formed at a frequency above 15 MHz. The methods may also include depositing a silicon nitride material on the substrate.

公开(公告)号：US20220084809A1

公开(公告)日：2022-03-17

申请号：US17018173

申请日：2020-09-11

Applicant: Applied Materials, Inc.

Inventor： Chuanxi Yang ,  Hang Yu ,  Deenesh Padhi

IPC: H01L21/02 ,  C23C8/24 ,  C23C8/36 ,  C23C16/38

Abstract: Methods for forming a SiBN film comprising depositing a film on a feature on a substrate. The method comprises in a first cycle, depositing a SiB layer on a substrate in a chamber using a chemical vapor deposition process, the substrate having at least one feature thereon, the at least one feature comprising an upper surface, a bottom surface and sidewalls, the SiB layer formed on the upper surface, the bottom surface and the sidewalls. In a second cycle, the SiB layer is treated with a plasma comprising a nitrogen-containing gas to form a conformal SiBN film.