公开(公告)号：US20250101578A1

公开(公告)日：2025-03-27

申请号：US18975559

申请日：2024-12-10

Applicant: Applied Materials, Inc.

Inventor： Xinhai Han ,  Hang Yu ,  Kesong Hu ,  Kristopher R. Enslow ,  Masaki Ogata ,  Wenjiao Wang ,  Chuan Ying Wang ,  Chuanxi Yang ,  Joshua Maher ,  Phaik Lynn Leong ,  Grace Qi En Teong ,  Alok Jain ,  Nagarajan Rajagopalan ,  Deenesh Padhi ,  SeoYoung Lee

IPC: C23C16/34 ,  C23C16/40 ,  H10B41/20 ,  H10B41/35 ,  H10B43/20 ,  H10B43/35

Abstract: Exemplary semiconductor structures may include a stack of layers overlying a substrate. The stack of layers may include a first portion of layers, a second portion of layers overlying the first portion of layers, and a third portion of layers overlying the second portion of layers. The first portion of layers, the second portion of layers, and the third portion of layers may include alternating layers of a silicon oxide material and a silicon nitride material. One or more apertures may be formed through the stack of layers. A lateral notch in each individual layer of silicon nitride material at an interface of the individual layer of silicon nitride material and an overlying layer of silicon oxide material may extend a distance less than or about 100% of a distance corresponding to a thickness of the individual layer of silicon nitride material.

公开(公告)号：US11935751B2

公开(公告)日：2024-03-19

申请号：US17330013

申请日：2021-05-25

Applicant: Applied Materials, Inc.

Inventor： Siyu Zhu ,  Chuanxi Yang ,  Hang Yu ,  Deenesh Padhi ,  Yeonju Kwak ,  Jeong Hwan Kim ,  Qian Fu ,  Xiawan Yang

IPC: H01L21/033 ,  C23C16/04 ,  C23C16/34 ,  C23C16/458 ,  C23C16/50 ,  H01J37/32 ,  H01L21/311

CPC classification number: H01L21/0337 ,  C23C16/042 ,  C23C16/342 ,  C23C16/4584 ,  C23C16/50 ,  H01J37/32449 ,  H01L21/0332 ,  H01L21/31144 ,  H01J2237/332

Abstract: Exemplary deposition methods may include delivering a boron-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the boron-containing precursor and the nitrogen-containing precursor. A flow rate ratio of the hydrogen-containing precursor to either of the boron-containing precursor or the nitrogen-containing precursor may be greater than or about 2:1. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a boron-and-nitrogen material on a substrate disposed within the processing region of the semiconductor processing chamber.

公开(公告)号：US20220384189A1

公开(公告)日：2022-12-01

申请号：US17330013

申请日：2021-05-25

Applicant: Applied Materials, Inc.

Inventor： Siyu Zhu ,  Chuanxi Yang ,  Hang Yu ,  Deenesh Padhi ,  Yeonju Kwak ,  Jeong Hwan Kim ,  Qian Fu ,  Xiawan Yang

IPC: H01L21/033 ,  H01L21/311 ,  H01J37/32 ,  C23C16/34 ,  C23C16/50 ,  C23C16/458 ,  C23C16/04

Abstract: Exemplary deposition methods may include delivering a boron-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the boron-containing precursor and the nitrogen-containing precursor. A flow rate ratio of the hydrogen-containing precursor to either of the boron-containing precursor or the nitrogen-containing precursor may be greater than or about 2:1. The methods may include forming a plasma of all precursors within the processing region of the semiconductor processing chamber. The methods may include depositing a boron-and-nitrogen material on a substrate disposed within the processing region of the semiconductor processing chamber.

公开(公告)号：US20220068630A1

公开(公告)日：2022-03-03

申请号：US17009002

申请日：2020-09-01

Applicant: Applied Materials, Inc.

Inventor： Chuanxi Yang ,  Hang Yu ,  Yu Yang ,  Chuan Ying Wang ,  Allison Yau ,  Xinhai Han ,  Sanjay G. Kamath ,  Deenesh Padhi

IPC: H01L21/02 ,  C23C16/34

Abstract: Exemplary methods of semiconductor processing may include flowing a silicon-containing precursor, a nitrogen-containing precursor, and diatomic hydrogen into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may also include forming a plasma of the silicon-containing precursor, the nitrogen-containing precursor, and the diatomic hydrogen. The plasma may be formed at a frequency above 15 MHz. The methods may also include depositing a silicon nitride material on the substrate.

公开(公告)号：US20210040607A1

公开(公告)日：2021-02-11

申请号：US16986632

申请日：2020-08-06

Applicant: Applied Materials, Inc.

Inventor： Xinhai Han ,  Hang Yu ,  Kesong Hu ,  Kristopher Enslow ,  Masaki Ogata ,  Wenjiao Wang ,  Chuan Ying Wang ,  Chuanxi Yang ,  Joshua Maher ,  Phaik Lynn Leong ,  Qi En Teong ,  Alok Jain ,  Nagarajan Rajagopalan ,  Deenesh Padhi

IPC: C23C16/34 ,  H01L27/11524 ,  H01L27/11551 ,  H01L27/1157 ,  H01L27/11578 ,  C23C16/40

Abstract: Exemplary methods of forming semiconductor structures may include forming a silicon oxide layer from a silicon-containing precursor and an oxygen-containing precursor. The methods may include forming a silicon nitride layer from a silicon-containing precursor, a nitrogen-containing precursor, and an oxygen-containing precursor. The silicon nitride layer may be characterized by an oxygen concentration greater than or about 5 at. %. The methods may also include repeating the forming a silicon oxide layer and the forming a silicon nitride layer to produce a stack of alternating layers of silicon oxide and silicon nitride.

公开(公告)号：US20240014039A1

公开(公告)日：2024-01-11

申请号：US17861691

申请日：2022-07-11

Applicant: Applied Materials, Inc.

Inventor： Jeong Hwan Kim ,  Yeonju Kwak ,  Qian Fu ,  Siyu Zhu ,  Chuanxi Yang ,  Hang Yu

IPC: H01L21/033

CPC classification number: H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/0338

Abstract: Exemplary semiconductor processing methods may include providing an oxygen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include forming a plasma of the oxygen-containing precursor to produce oxygen-containing plasma effluents. The methods may include contacting a substrate housed in the processing region with the oxygen-containing plasma effluents. The substrate may include a boron-and-nitrogen-containing material overlying a carbon-containing material. The boron-and-nitrogen-containing material comprises a plurality of openings. The methods may include etching the carbon-containing material.

公开(公告)号：US20220415651A1

公开(公告)日：2022-12-29

申请号：US17361925

申请日：2021-06-29

Applicant: Applied Materials, Inc.

Inventor： Qixin Shen ,  Chuanxi Yang ,  Hang Yu ,  Deenesh Padhi ,  Gill Yong Lee ,  Sung-Kwan Kang ,  Abdul Wahab Mohammed ,  Hailing Liu

IPC: H01L21/02 ,  H01L21/033 ,  H01L27/108

Abstract: Memory devices and methods of forming memory devices are described. The memory devices comprise a silicon nitride hard mask layer on a ruthenium layer. Forming the silicon nitride hard mask layer on the ruthenium comprises pre-treating the ruthenium layer with a plasma to form an interface layer on the ruthenium layer; and forming a silicon nitride layer on the interface layer by plasma-enhanced chemical vapor deposition (PECVD). Pre-treating the ruthenium layer, in some embodiments, results in the interface layer having a reduced roughness and the memory device having a reduced resistivity compared to a memory device that does not include the interface layer.

公开(公告)号：US11515145B2

公开(公告)日：2022-11-29

申请号：US17018173

申请日：2020-09-11

Applicant: Applied Materials, Inc.

Inventor： Chuanxi Yang ,  Hang Yu ,  Deenesh Padhi

IPC: H01L21/02 ,  C23C16/38 ,  C23C8/36 ,  C23C8/24 ,  H01L21/033

Abstract: Methods for forming a SiBN film comprising depositing a film on a feature on a substrate. The method comprises in a first cycle, depositing a SiB layer on a substrate in a chamber using a chemical vapor deposition process, the substrate having at least one feature thereon, the at least one feature comprising an upper surface, a bottom surface and sidewalls, the SiB layer formed on the upper surface, the bottom surface and the sidewalls. In a second cycle, the SiB layer is treated with a plasma comprising a nitrogen-containing gas to form a conformal SiBN film.

公开(公告)号：US12195846B2

公开(公告)日：2025-01-14

申请号：US16986632

申请日：2020-08-06

Applicant: Applied Materials, Inc.

Inventor： Xinhai Han ,  Hang Yu ,  Kesong Hu ,  Kristopher R. Enslow ,  Masaki Ogata ,  Wenjiao Wang ,  Chuan Ying Wang ,  Chuanxi Yang ,  Joshua Maher ,  Phaik Lynn Leong ,  Grace Qi En Teong ,  Alok Jain ,  Nagarajan Rajagopalan ,  Deenesh Padhi ,  SeoYoung Lee

IPC: C23C16/00 ,  C23C16/34 ,  C23C16/40 ,  H10B41/20 ,  H10B41/35 ,  H10B43/20 ,  H10B43/35

Abstract: Exemplary methods of forming semiconductor structures may include forming a silicon oxide layer from a silicon-containing precursor and an oxygen-containing precursor. The methods may include forming a silicon nitride layer from a silicon-containing precursor, a nitrogen-containing precursor, and an oxygen-containing precursor. The silicon nitride layer may be characterized by an oxygen concentration greater than or about 5 at. %. The methods may also include repeating the forming a silicon oxide layer and the forming a silicon nitride layer to produce a stack of alternating layers of silicon oxide and silicon nitride.

公开(公告)号：US20240332009A1

公开(公告)日：2024-10-03

申请号：US18616689

申请日：2024-03-26

Applicant: Applied Materials, Inc.

Inventor： Qixin Shen ,  Chuanxi Yang ,  Hang Yu ,  Deenesh Padhi ,  Prashanthi Para ,  Miguel S. Fung ,  Rajesh Prasad ,  Fenglin Wang ,  Shan Tang ,  Kyu-Ha Shim

IPC: H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02321 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/67213

Abstract: Exemplary methods of semiconductor processing may include forming a layer of silicon nitride on a semiconductor substrate. The layer of silicon nitride may be characterized by a first roughness. The methods may include performing a post-deposition treatment on the layer of silicon nitride. The methods may include reducing a roughness of the layer of silicon nitride such that the layer of silicon nitride may be characterized by a second roughness less than the first roughness.