公开(公告)号：US08404551B2

公开(公告)日：2013-03-26

申请号：US12960289

申请日：2010-12-03

申请人： Pushkar Ranade ,  Lucian Shifren ,  Sachin R. Sonkusale

发明人： Pushkar Ranade ,  Lucian Shifren ,  Sachin R. Sonkusale

IPC分类号： H01L21/336 ,  H01L21/70 ,  H01L29/02

CPC分类号： H01L29/7816 ,  H01L27/085 ,  H01L27/088 ,  H01L29/105 ,  H01L29/1083 ,  H01L29/165 ,  H01L29/66537 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7833 ,  H01L29/7835 ,  H01L29/7848

摘要： A planar transistor with improved performance has a source and a drain on a semiconductor substrate that includes a substantially undoped channel extending between the source and the drain. A gate is positioned over the substantially undoped channel on the substrate. Implanted source/drain extensions contact the source and the drain, with the implanted source/drain extensions having a dopant concentration of less than about 1×1019 atoms/cm3, or alternatively, less than one-quarter the dopant concentration of the source and the drain.

公开(公告)号：US20130161743A1

公开(公告)日：2013-06-27

申请号：US13770313

申请日：2013-02-19

申请人： Pushkar Ranade ,  Lucian Shifren ,  Sachin R. Sonkusale

发明人： Pushkar Ranade ,  Lucian Shifren ,  Sachin R. Sonkusale

IPC分类号： H01L29/78 ,  H01L27/085

CPC分类号： H01L29/7816 ,  H01L27/085 ,  H01L27/088 ,  H01L29/105 ,  H01L29/1083 ,  H01L29/165 ,  H01L29/66537 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7833 ,  H01L29/7835 ,  H01L29/7848

摘要： A planar transistor with improved performance has a source and a drain on a semiconductor substrate that includes a substantially undoped channel extending between the source and the drain. A gate is positioned over the substantially undoped channel on the substrate. Implanted source/drain extensions contact the source and the drain, with the implanted source/drain extensions having a dopant concentration of less than about 1×1019 atoms/cm3′, or alternatively, less than one-quarter the dopant concentration of the source and the drain.

摘要翻译： 具有改进性能的平面晶体管在半导体衬底上具有源极和漏极，其包括在源极和漏极之间延伸的基本上未掺杂的沟道。 栅极位于衬底上的基本上未掺杂的沟道上。 注入源极/漏极延伸部接触源极和漏极，注入源极/漏极延伸部的掺杂剂浓度小于约1×1019原子/ cm3'，或者可选地，小于源极的掺杂剂浓度的四分之一，以及 排水。

公开(公告)号：US20120139051A1

公开(公告)日：2012-06-07

申请号：US12960289

申请日：2010-12-03

申请人： Pushkar Ranade ,  Lucian Shifren ,  Sachin R. Sonkusale

发明人： Pushkar Ranade ,  Lucian Shifren ,  Sachin R. Sonkusale

IPC分类号： H01L21/336 ,  H01L29/10

CPC分类号： H01L29/7816 ,  H01L27/085 ,  H01L27/088 ,  H01L29/105 ,  H01L29/1083 ,  H01L29/165 ,  H01L29/66537 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7833 ,  H01L29/7835 ,  H01L29/7848

摘要： A planar transistor with improved performance has a source and a drain on a semiconductor substrate that includes a substantially undoped channel extending between the source and the drain. A gate is positioned over the substantially undoped channel on the substrate. Implanted source/drain extensions contact the source and the drain, with the implanted source/drain extensions having a dopant concentration of less than about 1×1019 atoms/cm3, or alternatively, less than one-quarter the dopant concentration of the source and the drain.

摘要翻译： 具有改进性能的平面晶体管在半导体衬底上具有源极和漏极，其包括在源极和漏极之间延伸的基本上未掺杂的沟道。 栅极位于衬底上的基本上未掺杂的沟道上。 注入源极/漏极延伸部接触源极和漏极，注入源极/漏极延伸部的掺杂剂浓度小于约1×1019原子/ cm3，或者可选地，小于源极的掺杂剂浓度的四分之一 排水。

公开(公告)号：US20110309450A1

公开(公告)日：2011-12-22

申请号：US12960266

申请日：2010-12-03

申请人： Lucian Shifren ,  Pushkar Ranade ,  Sachin R. Sonkusale

发明人： Lucian Shifren ,  Pushkar Ranade ,  Sachin R. Sonkusale

IPC分类号： H01L27/092 ,  H01L21/8238

CPC分类号： H01L27/092 ,  H01L21/823807 ,  H01L21/823842 ,  H01L27/0922

摘要： A semiconductor structure includes a first PMOS transistor element having a gate region with a first gate metal associated with a PMOS work function and a first NMOS transistor element having a gate region with a second metal associated with a NMOS work function. The first PMOS transistor element and the first NMOS transistor element form a first CMOS device. The semiconductor structure also includes a second PMOS transistor that is formed in part by concurrent deposition with the first NMOS transistor element of the second metal associated with a NMOS work function to form a second CMOS device with different operating characteristics than the first CMOS device.

摘要翻译： 半导体结构包括具有栅极区域的第一PMOS晶体管元件，栅极区域与PMOS功能相关联的第一栅极金属和具有与NMOS功能相关联的第二金属的栅极区域的第一NMOS晶体管元件。 第一PMOS晶体管元件和第一NMOS晶体管元件形成第一CMOS器件。 该半导体结构还包括第二PMOS晶体管，该第二PMOS晶体管部分地通过与NMOS功能相关联的第二金属的第一NMOS晶体管元件并行形成，以形成具有与第一CMOS器件不同的工作特性的第二CMOS器件。