公开(公告)号：US20050169806A1

公开(公告)日：2005-08-04

申请号：US10850163

申请日：2004-05-21

申请人： Makiko Katano ,  Kazuhiro Nishiki

发明人： Makiko Katano ,  Kazuhiro Nishiki

IPC分类号： G01N1/18 ,  G01N1/22 ,  G01N30/06 ,  G01N31/00

CPC分类号： G01N31/005 ,  G01N1/18 ,  G01N2001/2217 ,  Y10T436/18

摘要： According to the present invention, there is provided an air impurity measurement apparatus having, a collector which collects an impurity in the air into pure water; a divider which divides a collecting liquid obtained by said collector into at least two portions; an oxidizer addition unit which adds an oxidizer to at least one of divided collecting liquids obtained by said divider; and an analyzer which analyzes at least one of the collecting liquid to which the oxidizer is added and the collecting liquid to which the oxidizer is not added.

摘要翻译： 根据本发明，提供了一种空气杂质测量装置，具有将空气中的杂质收集到纯水中的收集器; 分隔器，其将由所述收集器获得的收集液体分成至少两部分; 氧化剂添加单元，其将氧化剂添加到由所述分隔器获得的分割收集液中的至少一种; 以及分析器，其分析添加有氧化剂的收集液中的至少一种和未添加氧化剂的收集液。

公开(公告)号：US20130244349A1

公开(公告)日：2013-09-19

申请号：US13593563

申请日：2012-08-24

申请人： Yuji Yamada ,  Makiko Katano ,  Chikashi Takeuchi ,  Tomoyo Naito

发明人： Yuji Yamada ,  Makiko Katano ,  Chikashi Takeuchi ,  Tomoyo Naito

IPC分类号： H01L21/66 ,  C23C16/46

CPC分类号： H01L22/12

摘要： According to one embodiment, an impurity analysis method comprises performing vapor-phase decomposition on a silicon-containing film formed on a substrate, heating the substrate at a first temperature after vapor phase decomposition, heating the substrate at a second temperature higher than the first temperature after heating at the first temperature, to remove a silicon compound deposited on the surface of the silicon-containing film, dropping a recovery solution onto the substrate surface after heating at the second temperature and moving the substrate surface, to recover metal into the recovery solution, and drying the recovery solution, to perform X-ray fluorescence spectrometry on a dried mark.

摘要翻译： 根据一个实施例，杂质分析方法包括对形成在基板上的含硅膜进行气相分解，在气相分解后的第一温度下加热基板，在高于第一温度的第二温度下加热基板 在第一温度下加热后，除去沉积在含硅膜表面上的硅化合物，在第二温度下加热后将回收溶液滴加到基板表面上并移动基板表面，以将金属回收到回收溶液中 ，并干燥回收溶液，对干标记进行X射线荧光光谱法。

公开(公告)号：US20070268467A1

公开(公告)日：2007-11-22

申请号：US11802291

申请日：2007-05-22

申请人： Makiko Katano ,  Takuya Kono

发明人： Makiko Katano ,  Takuya Kono

IPC分类号： G03B27/52

CPC分类号： G03F7/70933 ,  G03F7/70916

摘要： According to an aspect of the invention, there is provided an exposure apparatus including a chemical filter disposed in an air conditioning system to reduce a concentration of impurities in a gas, an optical component arranged to be exposed to the gas on a downstream side of the chemical filter, an irradiation section which irradiates the optical component with light of a wavelength equal to that of light for an exposure process, and a measurement section which measures a transmittance of the light applied from the irradiation section and transmitted through the optical component.

摘要翻译： 根据本发明的一个方面，提供了一种曝光装置，包括设置在空调系统中的化学过滤器，以减少气体中杂质的浓度;布置成暴露于气体的下游侧的气体的光学部件 化学过滤器，用于对光学部件照射波长相等于用于曝光处理的光的照射部分的测量部分，以及测量从照射部分施加并透射通过光学部件的光的透射率的测量部分。

公开(公告)号：US08932954B2

公开(公告)日：2015-01-13

申请号：US13593563

申请日：2012-08-24

申请人： Yuji Yamada ,  Makiko Katano ,  Chikashi Takeuchi ,  Tomoyo Naito

发明人： Yuji Yamada ,  Makiko Katano ,  Chikashi Takeuchi ,  Tomoyo Naito

IPC分类号： H01L21/311 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L22/12

摘要： According to one embodiment, an impurity analysis method comprises performing vapor-phase decomposition on a silicon-containing film formed on a substrate, heating the substrate at a first temperature after vapor phase decomposition, heating the substrate at a second temperature higher than the first temperature after heating at the first temperature, to remove a silicon compound deposited on the surface of the silicon-containing film, dropping a recovery solution onto the substrate surface after heating at the second temperature and moving the substrate surface, to recover metal into the recovery solution, and drying the recovery solution, to perform X-ray fluorescence spectrometry on a dried mark.

摘要翻译： 根据一个实施例，杂质分析方法包括对形成在基板上的含硅膜进行气相分解，在气相分解后的第一温度下加热基板，在高于第一温度的第二温度下加热基板 在第一温度下加热后，除去沉积在含硅膜表面上的硅化合物，在第二温度下加热后将回收溶液滴加到基板表面上并移动基板表面，以将金属回收到回收溶液中 ，并干燥回收溶液，对干标记进行X射线荧光光谱法。