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公开(公告)号：US20220406822A1
公开(公告)日：2022-12-22
申请号：US17898761
申请日：2022-08-30
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
IPC: H01L27/12 , H01L21/02 , H01L29/66 , H01L29/786
Abstract: The present disclosure provides a method for preparing an interlayer insulating layer and a method for manufacturing a thin film transistor, and a thin film transistor, belongs to the field of display technology, and can solve the problem of poor resistance to breakdown of the interlayer insulating layer in the related art. The method for preparing an interlayer insulating layer includes the following steps: forming a silicon oxide layer with a first reaction gas and forming a silicon nitride layer with a second reaction gas such that hydrogen content in the silicon nitride layer is less than or equal to hydrogen content in the silicon oxide layer.
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公开(公告)号：US20220173125A1
公开(公告)日：2022-06-02
申请号：US17349164
申请日：2021-06-16
Inventor： Haitao WANG , Jun CHENG , Ming WANG , Qinghe WANG , Jun WANG , Tongshang SU
Abstract: The disclosure discloses an array substrate and a preparation method thereof, a display panel and a display device. The array substrate includes: a substrate, and a first metal layer, a metal oxide layer and a second metal layer which are sequentially stacked and isolated from each other on the substrate; the first metal layer includes a light shading metal, a first electrode, and an anti-static line; the metal oxide layer includes a first active layer; the second metal layer includes a gate line and a second electrode; the gate line is connected with the anti-static line through a first TFT, one of the first electrode and the second electrode forms the source and drain electrodes of the first TFT, and the other forms the gate electrode of the first TFT; and the source is electrically connected with the gate line, and the drain is electrically connected with the anti-static line.
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公开(公告)号：US20210257428A1
公开(公告)日：2021-08-19
申请号：US16959114
申请日：2020-02-26
Inventor： Wei SONG , Ce ZHAO , Yuankui DING , Heekyu KIM , Ming WANG , Ning LIU , Yingbin HU
Abstract: The present disclosure provides a display substrate and a manufacturing method thereof, and a display device, and relates to the field of display technology. The display substrate includes a base substrate and a thin film transistor array. The thin film transistor array includes a plurality of thin film transistors. A first electrode in each thin film transistor includes a first portion and a second portion having a height difference therebetween, and a height of the second portion is greater than a height of the first portion in a direction perpendicular to the base substrate.
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公开(公告)号：US20200273995A1
公开(公告)日：2020-08-27
申请号：US16706160
申请日：2019-12-06
Inventor： Wei SONG , Ce ZHAO , Yuankui DING , Ming WANG , Jun LIU , Yingbin HU , Wei LI , Liusong NI
IPC: H01L29/786 , H01L27/12
Abstract: The present disclosure provides a transistor and a manufacturing method thereof, a display substrate and a display device. The transistor includes: a base structure; an active layer on the base structure; and a gate electrode, a source electrode and a drain electrode that are all located on a side of the active layer distal to the base structure. The active layer includes a first region corresponding to an orthographic projection of the gate electrode on the base structure and a second region outside the orthographic projection. A surface of the base structure in contact with the active layer in the first region is not in the same plane as a surface of the base structure in contact with the active layer in the second region. The active layer in the first region has substantially the same thickness as a thickness of the active layer in the second region.
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15.发明申请公开(公告)号：US20190157629A1
公开(公告)日：2019-05-23
申请号：US16192309
申请日：2018-11-15
Applicant: BOE Technology Group Co., Ltd.
Inventor： Ming WANG
Abstract: A display substrate including: a base substrate; a thin film transistor provided on a side of the base substrate; a planarization layer provided on a side of the thin film transistor away from the base substrate; a pixel defining layer provided on a side of the planarization layer away from the base substrate, defining a plurality of pixel regions arranged in a matrix, an orthographic projection of the pixel defining layer on the base substrate covering an orthographic projection of the thin film transistor on the base substrate; an organic light emitting diode provided in the pixel region, a recess being provided at a side of the planarization layer away from the base substrate, located at a boundary between the pixel defining layer and the pixel region and located between the thin film transistor and the organic light emitting diode, and a light blocking structure being provided in the recess.
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Patent Agency Ranking
公开(公告)号：US20250126986A1
公开(公告)日：2025-04-17
申请号：US18032281
申请日：2022-06-21
IPC: H10K59/131 , H10K59/121 , H10K59/126 , H10K59/80 , H10K102/00
Abstract: Provided is a display panel, including: a substrate; an auxiliary electrode on a side of the substrate; an insulating layer on a side, distal from the substrate, of the auxiliary electrode and a first via running through the insulating layer, the first via exposing the auxiliary electrode and being in an undercut shape; an anode layer on a side, distal from the substrate, of the insulating layer; a light emitting layer on a side, distal from the substrate, of the anode layer, the light emitting layer being broken at an opening in a side, distal from the substrate, of the first via into a first part and a second part; and a cathode layer on a side, distal from the substrate, of the light emitting layer, the cathode layer being coupled with the auxiliary electrode along a side wall of the first part of the light emitting layer.
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公开(公告)号：US20240353608A1
公开(公告)日：2024-10-24
申请号：US18246413
申请日：2022-06-29
Inventor： Nan WANG , Yong SHU , Qi CAO , Xian WANG , Ming WANG , Quan TONG , Yinggang LIU , Chengyi XU , Xiaofei ZHU , Junjie JIANG
IPC: F21V8/00
CPC classification number: G02B6/0038 , G02B6/0028 , G02B6/0073
Abstract: A backlight module includes a rear housing, a light guide plate and a light source. The rear housing includes a bottom wall and a side wall that are connected to each other; the bottom wall and the side wall enclose an accommodation cavity. The light guide plate is located in the accommodation cavity. The light source is located in the accommodation cavity and located between the side wall and a side surface of the light guide plate. The light source includes a circuit board and a plurality of light-emitting devices that are mounted on the circuit board. A surface of the circuit board away from the plurality of light-emitting devices faces the side wall, and light-emitting surfaces of the plurality of light-emitting devices face the side surface of the light guide plate.
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18.发明公开公开(公告)号：US20240304684A1
公开(公告)日：2024-09-12
申请号：US18028221
申请日：2022-03-28
Inventor： Ming WANG , Liusong NI , Kangkang WU , Yingbin HU , Chen XU
IPC: H01L29/417 , H01L29/66 , H01L29/786
CPC classification number: H01L29/41733 , H01L29/66969 , H01L29/7869
Abstract: Disclosed are a thin film transistor and preparation method thereof, display substrate and display apparatus. The thin film transistor includes a base substrate, a shielding layer, buffer layer, active layer, gate insulating layer and conductive layer stacked on the base substrate; the conductive layer includes a gate electrode, source electrode and drain electrode; the active layer includes a channel region, source transition region and drain transition region at two sides of the channel region, source connection region and drain connection region; the source transition region and drain transition region each include a first sub-region, second sub-region and third sub-region connected sequentially, first sub-region is located on a side of second sub-region away from the channel region, third sub-region is located on a side of second sub-region close to the channel region, a thickness of second sub-region is k times that of the channel region, k is 0.8 to 1.5.
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公开(公告)号：US20240213278A1
公开(公告)日：2024-06-27
申请号：US17913808
申请日：2021-10-26
Inventor： Haitao WANG , Ming WANG , Jun CHENG , Bin ZHOU , Jun WANG , Yongchao HUANG , Tongshang SU , Qinghe WANG
IPC: H01L27/12
CPC classification number: H01L27/1288 , H01L27/124
Abstract: The present disclosure provides a method for manufacturing a display panel, a display panel and a to-be-cut display panel, and relates to the field of display technologies. The method includes: forming a first electrostatic protective circuit and a source and drain conductive pattern on a base substrate; removing the source and drain conductive pattern within the target cutting region; forming a to-be-cut display panel by forming a superstructure on the base substrate; and cutting the to-be-cut display panel in the target cutting region. When manufacturing the internal structure of the display panel, only the source and drain conductive pattern in the target cutting region is removed, while the electrostatic protective circuit in the target cutting region is retained. In this way, the electrostatic protective circuit can always play the function of electrostatic protective during the formation of the internal structure of the display panel, such that the internal structure of the display panel is avoided from being damaged by electrostatic, the manufacturing yield of the display panel improved, the problem of low manufacturing yield of the display panel in the related technology is solved, and the effect of improving the manufacturing yield of the display panel is achieved.
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20.发明公开公开(公告)号：US20230363227A1
公开(公告)日：2023-11-09
申请号：US18354218
申请日：2023-07-18
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Dongfang WANG , Tongshang SU , Ming WANG , Ce ZHAO , Bin ZHOU
IPC: H10K59/35 , H10K59/126 , H10K59/121
CPC classification number: H10K59/351 , H10K59/126 , H10K59/1213 , H10K2102/103
Abstract: An OLED display substrate, a manufacturing method and a display device are provided. The OLED display substrate includes a base substrate and a plurality of pixel units arranged on the base substrate, each pixel unit includes a plurality of subpixel units, and each subpixel unit includes a switching TFT and a bottom-emission OLED, the OLED display substrate further includes a light-shielding layer arranged between the OLED and the switching TFT, and an orthogonal projection of the light-shielding layer onto the base substrate completely covers an orthogonal projection of a semiconductor region of the switching TFT onto the base substrate.
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