公开(公告)号：US10782275B2

公开(公告)日：2020-09-22

申请号：US15736750

申请日：2017-04-27

Applicant: Boe Technology Group Co., Ltd.

Inventor： Changcheng Ju ,  Xiyuan Wang ,  Zhuo Chen ,  Long Wang

IPC: G01N33/00 ,  G01N27/12 ,  G01N27/00

Abstract: The present disclosure provides a semiconductor hydrogen sensor and a manufacturing method thereof. The semiconductor hydrogen sensor comprises: a substrate; a gas-sensitive material pattern and a metal electrode pattern arranged in a same layer and distributed alternatingly on a side of the substrate; and a two-dimensional material filter layer arranged on a side surface of the gas-sensitive material pattern and the metal electrode pattern facing away from the substrate.

公开(公告)号：US20190171924A1

公开(公告)日：2019-06-06

申请号：US16093266

申请日：2018-04-20

Applicant: BOE Technology Group Co., Ltd.

Inventor： Changcheng Ju

IPC: G06M1/10 ,  H01L49/02 ,  H01L51/05 ,  H01L51/10 ,  H01F38/14

Abstract: A charged particle counting device, a manufacturing method thereof, and a charged particle counting system are provided. The charged particle counting device includes: a bipolar transistor (10) and a magneto-electric induction coil (20), a gate (101) of the bipolar transistor is electrically connected to an end of the magneto-electric induction coil, and the other end of the magneto-electric induction coil is applied with a constant voltage, when a stream of positively charged particles passes through the magneto-electric induction coil and a first induced voltage generated by the magneto-electric induction coil is greater than a predetermined voltage threshold, a channel of the bipolar transistor is an N-type channel; and when a stream of negatively charged particles passes through the magneto-electric induction coil and a second induced voltage generated by the magneto-electric induction coil is less than the predetermined voltage threshold, the channel of the bipolar transistor is a P-type channel.

公开(公告)号：US10276820B2

公开(公告)日：2019-04-30

申请号：US15565352

申请日：2016-11-14

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Changcheng Ju ,  Zhuo Chen ,  Wenhai Mei

IPC: H01L51/50 ,  H01L51/52 ,  H01L51/56

Abstract: The present application discloses a method of fabricating a quantum dots light emitting diode, the method including co-depositing an electron transport material and an inorganic perovskite material on a base substrate to form a composite layer having the electron transport material and the inorganic perovskite material.

公开(公告)号：US09910335B1

公开(公告)日：2018-03-06

申请号：US15647563

申请日：2017-07-12

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Long Wang ,  Yanzhao Li ,  Changcheng Ju

IPC: G02F1/1333 ,  G02F1/139 ,  H01L51/00 ,  G02F1/1334 ,  G02F1/137

CPC classification number: G02F1/139 ,  G02B6/00 ,  G02F1/1333 ,  G02F1/13336 ,  G02F1/1334 ,  G02F1/133615 ,  G02F2001/13345 ,  G02F2001/13347 ,  G02F2001/13775 ,  H01L51/0034

Abstract: Embodiments of the present disclosure disclose a display panel, a method of manufacturing the display panel, and a display apparatus. The display panel includes: a first substrate and a second substrate opposite to each other; a liquid crystal layer between the first substrate and the second substrate; and a plurality of pixel electrodes on a side of the first substrate facing towards the liquid crystal layer. Liquid crystal molecules of the liquid crystal layer in a region corresponding to each of the plurality pixel electrodes are in a polymer network state, and the more a distance between the each of the plurality of pixel electrodes and a light source of an edge-lighting type light source module of the display panel is, the more an area occupied by a polymer network in the region corresponding to the each of the plurality of pixel electrodes is.