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公开(公告)号:US20230097839A1
公开(公告)日:2023-03-30
申请号:US17442197
申请日:2021-01-29
Inventor: Zongmin LIU , Chunxin LI , Wei LI , Xichao FAN , Junwei GUO , Jijing HUANG , Mengjun HOU
Abstract: The disclosure provides a phase shifter, a manufacturing method thereof and an antenna, and belongs to the field of communication technology. The phase shifter includes a first substrate; a signal line and reference lines on the first substrate; a first insulating layer on the signal line; a plurality of electrode film bridges on a side of the first insulating layer distal to the signal line; and a first transmission structure on the first insulating layer and electrically connected to the signal line; and an orthographic projection of the first transmission structure on the first substrate is not overlapped with an orthographic projection of the plurality of electrode film bridges on the first substrate.
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公开(公告)号:US20240387967A1
公开(公告)日:2024-11-21
申请号:US18261517
申请日:2022-07-28
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Jianyun ZHAO , Jingwen GUO , Chunxin LI , Qianhong WU , Jianxing LIU , Zibo CAO , Feng QU
Abstract: A phase shifter and a method for preparing a phase shifter are provided. The phase shifter includes at least one phase shifter unit. The phase shifter unit includes a substrate; a first lead and a second lead on the substrate and spaced apart from each other; a bridging section on the first lead and the second lead, wherein the bridging section is connected to the first lead and the second lead; and a third lead on a side of the bridging section away from the substrate.
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公开(公告)号:US20230155265A1
公开(公告)日:2023-05-18
申请号:US17621219
申请日:2021-01-28
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Jingwen GUO , Qianhong WU , Chunxin LI , Feng QU
Abstract: The present disclosure provides a phase shifter and an antenna. The phase shifter includes: a substrate; a signal electrode, and a first reference electrode and a second reference electrode respectively on two sides of an extending direction of the signal electrode; an interlayer insulating layer on the signal electrode, the first reference electrode and the second reference electrode; and at least one phase control unit each including a film bridge. At least part of the at least one phase control unit further includes at least one driving structure including at least a driving electrode; at least part of the at least one driving structure has a different height from a height of the signal electrode in a direction away from the substrate; the driving structure in each phase control unit is at least partially overlapped an orthographic projection of the film bridge on the substrate.
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公开(公告)号:US20220302566A1
公开(公告)日:2022-09-22
申请号:US17514361
申请日:2021-10-29
Inventor: Jingwen GUO , Qianhong WU , Chunxin LI , Feng QU
Abstract: A MEMS phase shifter, including: a substrate; a coplanar waveguide signal structure on the substrate; two coplanar waveguide ground wires respectively at two sides of the coplanar waveguide signal structure; insulating isolation layers respectively on the two coplanar waveguide ground wires; and a metal film bridge across and over the coplanar waveguide signal structure and forming a gap with the coplanar waveguide signal structure, both ends of the metal film bridge respectively attached to the insulating isolation layers on the two coplanar waveguide ground wires, wherein an insulating dielectric layer is provided on the coplanar waveguide signal structure, and the insulating dielectric layer comprises at least one concave part, which is concave in the direction towards the substrate, on the surface facing the metal film bridge.
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公开(公告)号:US20220271432A1
公开(公告)日:2022-08-25
申请号:US17552735
申请日:2021-12-16
Inventor: Chunxin LI , Jingwen GUO , Qianhong WU , Feng QU
Abstract: The present disclosure provides an antenna and a communication device, the antenna includes a dielectric substrate, a first radiating element, a second radiating element and a switching element, the second radiating element surrounds the first radiating element, the second radiating element is of an open-loop structure, at least one first groove is provided in the first radiating element, each switching element corresponds to one first groove, the switching element includes a membrane bridge and a signal electrode, the signal electrode is arranged on the dielectric substrate, coupled to the second radiating element, and insulated from the first radiating element, the membrane bridge is arranged on a side of the first radiating element away from the dielectric substrate, each membrane bridge crosses over one first groove, and at least part of the signal electrode is located in a space defined by the membrane bridge and the first groove.
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公开(公告)号:US20220238974A1
公开(公告)日:2022-07-28
申请号:US17490592
申请日:2021-09-30
Inventor: Chunxin LI , Jingwen GUO , Qianhong WU , Feng QU
IPC: H01P1/18
Abstract: A phase shifter includes a substrate, a transmission line on the substrate and extending in a first direction, and first and second reference electrodes respectively on both sides of an extension direction of the transmission line. The transmission line includes signal line segments, any adjacent two of which have a gap therebetween to define a connection region. The phase shifter further includes at least one phase shifting unit each including: a film bridge extending in the first direction, a connection electrode extending in a second direction, and an interlayer insulating layer on a side of the connection electrode distal to the substrate. Both ends of the connection electrode are respectively connected with the first and second reference electrodes, and an orthogonal projection of the connection electrode on the substrate is in the connection region. Both ends of the film bridge are respectively connected with adjacent two signal line segments.
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公开(公告)号:US20220131247A1
公开(公告)日:2022-04-28
申请号:US17336448
申请日:2021-06-02
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Chunxin LI , Jingwen GUO , Qianhong WU , Kui LIANG , Tuo SUN
Abstract: A phase shifter and a method for manufacturing the same are provided. The phase shifter includes a substrate, a signal line on the substrate, ground lines in pairs and on the substrate, and at least one film bridge on the substrate and spaced apart from the signal line. Two adjacent ground lines of the ground lines are on both sides of the signal line and spaced apart from the signal line, respectively, and both ends of each film bridge are on the two adjacent ground lines, respectively. The signal line is in a space surrounded by each film bridge and the substrate. Each film bridge includes a metal layer opposite to the signal line, the metal layer has a plurality of openings therein, and the plurality of openings penetrate through the metal layer in a thickness direction of the metal layer.
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公开(公告)号:US20250076241A1
公开(公告)日:2025-03-06
申请号:US18557964
申请日:2023-02-23
Applicant: BOE Technology Group Co., Ltd.
Inventor: Jianxing LIU , Jingwen GUO , Qianhong WU , Chunxin LI , Jianyun ZHAO , Zibo CAO , Feng QU , Biqi LI
Abstract: A humidity sensor, a manufacturing method therefor and an electronic device are provided, and the humidity sensor includes: a base substrate, and at least one sensor unit arranged on the base substrate; the sensor unit includes: a first electrode and a support structure arranged on the base substrate, the support structure is located on at least one side of the first electrode; a second electrode located on a side of the first electrode away from the base substrate, an orthographic projection of the second electrode on the base substrate is overlapped with an orthographic projection of the first electrode on the base substrate, a space is arranged between the second electrode and the first electrode, and at least one end of the second electrode is fixed with the support structure; and an adsorption layer arranged on a side of the second electrode away from the base substrate.
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公开(公告)号:US20250019224A1
公开(公告)日:2025-01-16
申请号:US18280724
申请日:2022-10-27
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Jianxing LIU , Jingwen GUO , Qianhong WU , Chunxin LI , Zibo CAO , Jianyun ZHAO , Feng QU , Biqi LI
Abstract: A MEMS device includes: a dielectric substrate; a driving electrode, first and second reference electrodes on the dielectric substrate; a first dielectric layer covering the driving electrode; and a membrane bridge on a side of the first dielectric layer away from the dielectric substrate, where a first gap is between the first reference electrode and the driving electrode; a second gap is between the second reference electrode and the driving electrode; and a thickness of a part of the first dielectric layer at each of the first and second gaps is greater than a thickness of the driving electrode; and/or, a second dielectric layer is on a side of a bridge deck of the membrane bridge close to the dielectric substrate, and an orthographic projection of the second dielectric layer on the dielectric substrate covers at least an orthographic projection of the driving electrode on the dielectric substrate.
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公开(公告)号:US20240275009A1
公开(公告)日:2024-08-15
申请号:US18019553
申请日:2022-01-25
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Jianxing LIU , Jingwen GUO , Qianhong WU , Chunxin LI , Zibo CAO , Jianyun ZHAO , Feng QU
Abstract: A phase shifter includes: a first substrate; a signal electrode, a first reference electrode, and a second reference electrode which are on the first substrate; a first insulating layer covering at least a side of the signal electrode distal to the first substrate; and at least one film-bridge electrode group on a side of the first insulating layer distal to the signal electrode. Each film-bridge electrode group includes film-bridge electrodes insulated from each other, and an orthogonal projection of the signal electrode on the first substrate is between orthogonal projections of the first and second reference electrodes on the first substrate. An orthogonal projection of a bridge floor of each film-bridge electrode on the first substrate partially overlaps the orthogonal projection of the signal electrode. Distances between bridge floors of the film-bridge electrodes in a same film-bridge electrode group and the signal electrode are different from each other.
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