公开(公告)号：US20240153782A1

公开(公告)日：2024-05-09

申请号：US17775714

申请日：2021-05-28

Applicant: Beijing BOE Technology Development Co., Ltd. ,  BOE Technology Group Co., Ltd.

Inventor： Jiangbo CHEN ,  Hai YU ,  Tuo SUN ,  Shuo ZHANG ,  Zeyuan LI ,  Kui LIANG ,  Fanli MENG ,  Yanzhao LI

IPC: H01L21/3213 ,  H01L21/768 ,  H01L23/528

CPC classification number: H01L21/32139 ,  H01L21/7688 ,  H01L23/5283

Abstract: The present disclosure provides a metal wire and a method for manufacturing the same. The method for manufacturing the metal wire includes: forming a metal bar on a substrate; forming a mask above the metal bar, a width of the mask being smaller than a width of the metal bar, and an orthographic projection of the mask on the substrate is within an orthographic projection of the metal bar on the substrate; and wet etching the metal bar to a saturation state under a protection of the mask to form a metal wire, a width of the metal wire being smaller than the width of the mask. The above method can form the metal wire with a high thickness and a narrow line width.

公开(公告)号：US20230178675A1

公开(公告)日：2023-06-08

申请号：US17921605

申请日：2021-05-24

Applicant: BOE Technology Group Co., Ltd.

Inventor： Fanli MENG ,  Jiangbo CHEN ,  Zeyuan LI

IPC: H01L31/107 ,  H01L27/144

CPC classification number: H01L31/107 ,  H01L27/1446

Abstract: Provided are a detection substrate and a manufacturing method therefor, and a ray detection apparatus. The detection substrate includes: a driving back plate, wherein the driving back plate is provided with a plurality of detection regions, and each detection region includes a thin-film transistor located on a base substrate, and a first bonding electrode that is located on the thin-film transistor and is electrically connected to a source electrode of the thin-film transistor; and a plurality of avalanche photodiodes, wherein the plurality of avalanche photodiodes are arranged in the detection regions one by one, and a second bonding electrode that is fixedly connected to the first bonding electrode is arranged on the side of each avalanche photodiode that faces the driving back plate.

公开(公告)号：US20230168396A1

公开(公告)日：2023-06-01

申请号：US17921589

申请日：2021-05-25

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiangbo CHEN ,  Fanli MENG ,  Tuo SUN ,  Zeyuan LI ,  Liye DUAN

IPC: G01T1/24 ,  H01L27/146

CPC classification number: G01T1/246 ,  G01T1/247 ,  H01L27/14659

Abstract: A photoelectric detection circuit and a driving method therefor, and a detection substrate and a ray detector. The photoelectric detection circuit includes a storage circuit (101), an amplification circuit (102), a first reading circuit (103) and a second reading circuit (104), where the storage circuit (101), the amplification circuit (102) and the first reading circuit (103) cooperate with one another to realize a photoelectric detection function in an active mode; and the storage circuit (101) and the second reading circuit (104) cooperate with each other to realize a photoelectric detection function in a passive mode.

公开(公告)号：US20220375974A1

公开(公告)日：2022-11-24

申请号：US17764435

申请日：2021-05-12

Applicant: BOE Technology Group Co., Ltd.

Inventor： Fanli MENG ,  Jiangbo CHEN ,  Zeyuan LI

IPC: H01L27/146

Abstract: The embodiments of the present disclosure provide a detection substrate and a ray detector, comprising a base substrate; a direct-conversion photosensitive device located on the base substrate; an indirect-conversion photosensitive device located between the base substrate and the layer where the direct-conversion photosensitive device is located; and a reading transistor located between the base substrate and the layer where the indirect-conversion photosensitive device is located. The reading transistor is electrically connected to the direct-conversion photosensitive device and the indirect-conversion photosensitive device respectively.

公开(公告)号：US20220146697A1

公开(公告)日：2022-05-12

申请号：US17352962

申请日：2021-06-21

Applicant: BOE Technology Group Co., Ltd.

Inventor： Zeyuan LI ,  Jiangbo CHEN ,  Fanli MENG

IPC: G01T1/24 ,  H01L27/146

Abstract: The present disclosure provides a flat panel detector and a driving method thereof. A detection unit includes: a first transistor, a second transistor, a storage capacitor and a photoelectric detection device, and because an active layer of the second transistor is made of amorphous silicon semiconductor materials and an active layer of the first transistor is made of low-temperature poly-silicon semiconductor materials or metallic oxide semiconductor materials, transmission delay of an electric signal generated by the photoelectric detection device may be reduced by controlling conduction and cut-off of the first transistor and controlling conduction and cut-off of the second transistor.

公开(公告)号：US20210149063A1

公开(公告)日：2021-05-20

申请号：US16641708

申请日：2019-06-21

Applicant: BEIJING BOE TECHNOLOGY DEVELOPMENT CO., LTD. ,  BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Kui LIANG ,  Xiaohui LIU ,  Jiangbo CHEN ,  Da LI ,  Shuo ZHANG ,  Zeyuan LI ,  Fanli MENG ,  Fan LI

IPC: G01T1/24 ,  H01L27/146

Abstract: A ray detector and a ray detection panel. The ray detector includes a base substrate, a thin film transistor, a scintillator, and a photodetector; the scintillator is located on aside of the photodetector that is away from the base substrate; the photodetector includes: a first conductive structure; a semiconductor layer; a second conductive structure; a first dielectric layer; and a second dielectric layer, the second conductive structure is electrically connected with source electrode; the thin film transistor is located between the base substrate and the photodetector; and an orthographic projection of the thin film transistor on the base substrate at least partially falls into an orthographic projection of the photodetector on the base substrate.