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公开(公告)号：US20240365474A1
公开(公告)日：2024-10-31
申请号：US18291913
申请日：2022-08-10
发明人： Fanli MENG , Shuo ZHANG , Zeyuan LI , Tuo SUN , Hai YU , Yanzhao LI
CPC分类号： H05K3/064 , H01Q1/38 , H05K3/182 , H05K2201/10098
摘要： A method for preparing a sensing device is provided, the method includes: forming, on a surface of a transparent substrate, a first auxiliary patterning layer having a trench; and forming a mesh structure in the trench of the first auxiliary patterning layer by means of an electroplating process, or forming a conductive layer in the trench of the first auxiliary patterning layer by means of an electroplating process and then etching the conductive layer to form a mesh structure. The mesh structure has a line width of less than or equal to 1.5 microns and a thickness of greater than or equal to 2 microns.
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公开(公告)号：US20240345447A1
公开(公告)日：2024-10-17
申请号：US18682120
申请日：2022-06-30
发明人： Jiangbo CHEN , Fanli MENG , Zeyuan LI , Qiuyun TAN
CPC分类号： G02F1/155 , G02F1/13324
摘要： A dimming structure and a dimming device are provided. The dimming structure includes a positive current collector layer, a positive pole, an electrolyte layer, and a negative current collector layer; the positive current collector layer is connected to a first positive pole of a power supply; the positive pole is provided on a side of the positive current collector layer; the electrolyte layer is provided on a side of the positive pole away from the positive current collector layer; the negative current collector layer is provided on a side of the electrolyte layer away from the positive current collector layer and is connected to a first negative pole of the power supply; the positive current collector layer and the negative current collector layer are conductors; the positive current collector layer, the positive pole, the electrolyte layer, and the negative current collector layer are all light-transmissive layers.
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公开(公告)号：US20240170505A1
公开(公告)日：2024-05-23
申请号：US17777422
申请日：2021-05-31
发明人： Fanli MENG , Zeyuan LI , Jiangbo CHEN , Ding DING
IPC分类号： H01L27/144 , H01L23/31 , H01L27/092 , H01L27/12
CPC分类号： H01L27/1443 , H01L23/3171 , H01L27/0922 , H01L27/1259
摘要： The present disclosure relates to an X-RAY detector including a base substrate and a plurality of detection units arranged on the base substrate. Each detection unit includes a light conversion element and a switching transistor, the light conversion element is configured to convert an optical signal into an electrical signal, and the switching transistor is configured to output the electrical signal to a reading signal line. Each detection unit further includes a radiation shielding structure located at a light-entering side of the detection unit, and an orthogonal projection of the radiation shielding structure onto the base substrate fully covers an orthogonal projection of the switching transistor onto the base substrate. The present disclosure further relates to a method for forming the X-RAY detector.
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公开(公告)号：US20240153782A1
公开(公告)日：2024-05-09
申请号：US17775714
申请日：2021-05-28
发明人： Jiangbo CHEN , Hai YU , Tuo SUN , Shuo ZHANG , Zeyuan LI , Kui LIANG , Fanli MENG , Yanzhao LI
IPC分类号： H01L21/3213 , H01L21/768 , H01L23/528
CPC分类号： H01L21/32139 , H01L21/7688 , H01L23/5283
摘要： The present disclosure provides a metal wire and a method for manufacturing the same. The method for manufacturing the metal wire includes: forming a metal bar on a substrate; forming a mask above the metal bar, a width of the mask being smaller than a width of the metal bar, and an orthographic projection of the mask on the substrate is within an orthographic projection of the metal bar on the substrate; and wet etching the metal bar to a saturation state under a protection of the mask to form a metal wire, a width of the metal wire being smaller than the width of the mask. The above method can form the metal wire with a high thickness and a narrow line width.
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公开(公告)号：US20210149063A1
公开(公告)日：2021-05-20
申请号：US16641708
申请日：2019-06-21
发明人： Kui LIANG , Xiaohui LIU , Jiangbo CHEN , Da LI , Shuo ZHANG , Zeyuan LI , Fanli MENG , Fan LI
IPC分类号： G01T1/24 , H01L27/146
摘要： A ray detector and a ray detection panel. The ray detector includes a base substrate, a thin film transistor, a scintillator, and a photodetector; the scintillator is located on aside of the photodetector that is away from the base substrate; the photodetector includes: a first conductive structure; a semiconductor layer; a second conductive structure; a first dielectric layer; and a second dielectric layer, the second conductive structure is electrically connected with source electrode; the thin film transistor is located between the base substrate and the photodetector; and an orthographic projection of the thin film transistor on the base substrate at least partially falls into an orthographic projection of the photodetector on the base substrate.
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公开(公告)号：US20220231086A1
公开(公告)日：2022-07-21
申请号：US17476343
申请日：2021-09-15
发明人： Fanli MENG , Jiangbo CHEN , Zeyuan LI
摘要： A detection substrate and a flat-panel detector, and relates to the technical field of photoelectric detection. The detection substrate can improve radiation resistance and prolong a service life without increasing the thickness of a scintillator layer. The detection substrate includes a plurality of detection pixel units arranged in an array. Each of the detection pixel units includes: a transistor, a photoelectric conversion section, and a scintillator layer, with the photoelectric conversion section disposed between the transistor and the scintillator layer, the photoelectric conversion section includes a radiation sensitive layer and a photosensitive unit, which are laminated in arrangement; the radiation sensitive layer is configured to absorb rays and convert the rays into carriers; and the photosensitive unit is configured to at least absorb visible light and convert the visible light into carriers. The present disclosure is applicable to the production of the detection substrates.
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公开(公告)号：US20220262834A1
公开(公告)日：2022-08-18
申请号：US17630651
申请日：2021-03-12
发明人： Fanli MENG , Jiangbo CHEN , Fan LI , Kui LIANG , Da LI , Shuo ZHANG , Zeyuan LI
IPC分类号： H01L27/146 , H04N5/3745
摘要： The disclosure provides a light detection substrate, a manufacturing method thereof and a light detection apparatus. The light detection substrate includes a plurality of light detection units, each of the light detection units includes a first electrode, a second electrode and a photoelectric conversion layer, a spacer region exists between orthographic projections of the first electrode and the second electrode on a substrate, the photoelectric conversion layer is provided with at least one opening, and an orthographic projection of the at least one opening on the substrate is located in the spacer region.
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公开(公告)号：US20220229194A1
公开(公告)日：2022-07-21
申请号：US17488259
申请日：2021-09-28
发明人： Jiangbo CHEN , Fanli MENG , Zeyuan LI , Yao LU , Tuo SUN , Yanzhao LI , Ding DING
IPC分类号： G01T1/20 , H04N5/32 , H04N5/378 , H01L27/146
摘要： The present disclosure provides an active pixel sensor and a flat panel detector. The active pixel sensor includes: a light sensing device configured to convert light sensed by the light sensing device into charges and supply the charges to a floating diffusion node; an amplification sub-circuit configured to amplify a signal according to a potential at the floating diffusion node and output the amplified signal through the output terminal; an adjustment sub-circuit configured to adjust, in response to a first control signal, a conversion gain from an amount of the light sensed by the light sensing device to the potential at the floating diffusion node; and a read sub-circuit configured to transmit a voltage of the input terminal of the read sub-circuit to the output terminal of the read sub-circuit according to a scan signal provided by the scan line.
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公开(公告)号：US20210313357A1
公开(公告)日：2021-10-07
申请号：US17204057
申请日：2021-03-17
发明人： Jiangbo CHEN , Fanli MENG , Fan LI , Shuo ZHANG , Da LI , Zeyuan LI , Yanzhao LI
IPC分类号： H01L27/144
摘要： A photodetector, includes a photosensitive layer, a thin film transistor, and a sensing electrode, the sensing electrode connected to one of source/drain electrodes of the thin film transistor to transmit a signal generated by the photosensitive layer to the thin film transistor; wherein the photodetector further i a hydrogen barrier layer which is disposed between the photosensitive layer and the thin film transistor and is configured to inhibit hydrogen of the photosensitive layer from entering the thin film transistor. A method of manufacturing a photodetector is further provided.
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公开(公告)号：US20220165900A1
公开(公告)日：2022-05-26
申请号：US17356194
申请日：2021-06-23
发明人： Fanli MENG , Jiangbo CHEN , Zeyuan LI , Yao LU , Ning DANG
IPC分类号： H01L31/08 , H01L31/0224 , A61B6/00
摘要： The present disclosure provides a flat panel detector and a medical image detection device. The flat panel detector includes a base substrate, wherein the base substrate is divided into a plurality of detection units, each detection unit includes a first absorbing layer and a second absorbing layer, both of which are arranged on the base substrate in a laminating manner, the second absorbing layer is located on one side, away from the base substrate, of the first absorbing layer, and an energy level of rays absorbed by the second absorbing layer is smaller than that of rays absorbed by the first absorbing layer; a voltage supply electrode structure; and an output circuit, electrically connected to the voltage supply electrode structure and configured to output a first detection signal of the first absorbing layer and a second detection signal of the second absorbing layer.
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