公开(公告)号：US09310629B2

公开(公告)日：2016-04-12

申请号：US14266397

申请日：2014-04-30

Applicant: Cisco Technology, Inc.

Inventor： Vipulkumar Patel ,  Prakash Gothoskar

IPC: G02F1/01 ,  G02F1/035 ,  G02F1/225 ,  G02F1/025 ,  B82Y20/00 ,  G02F1/21

CPC classification number: G02F1/025 ,  G02B6/132 ,  G02B6/136 ,  G02F1/011 ,  G02F1/2257 ,  G02F2001/0152

Abstract: An optical modulator may include a leftmost waveguide, a rightmost waveguide, and a dielectric layer disposed therebetween. In one embodiment, the waveguides may be disposed on the same plane. When a voltage potential is created between the rightmost and leftmost waveguides, these layers form a silicon-insulator-silicon capacitor (also referred to as SISCAP) structure that provides efficient, high-speed optical modulation of an optical signal passing through the modulator. As opposed to a horizontal SISCAP structure where the dielectric layer is disposed between upper and lower waveguides, arranging the dielectric layer between waveguides disposed on the same plane results in a vertical SISCAP structure. In one embodiment, the leftmost and rightmost waveguide are both made from crystalline silicon.

Abstract translation: 光调制器可以包括最左边的波导，最右边的波导和介于它们之间的电介质层。 在一个实施例中，波导可以设置在同一平面上。 当在最右侧和最左侧的波导之间产生电压电位时，这些层形成硅 - 绝缘体 - 硅电容器（也称为SISCAP）结构，其提供通过调制器的光信号的有效的高速光调制。 与水平SISCAP结构相反，其中介电层设置在上和下波导之间，将介质层布置在同一平面上的波导之间，导致垂直SISCAP结构。 在一个实施例中，最左侧和最右侧的波导均由晶体硅制成。