公开(公告)号：US20170141332A1

公开(公告)日：2017-05-18

申请号：US15322402

申请日：2015-06-26

Applicant: Cambridge Display Technology Limited

Inventor： Jeremy Burroughes ,  Christopher Newsome ,  Daniel Tobjork

IPC: H01L51/05 ,  H01L51/10

CPC classification number: H01L51/0562 ,  H01L51/0039 ,  H01L51/0043 ,  H01L51/0074 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/105

Abstract: An organic thin film transistor comprising source and drain electrodes (103, 105); a semiconducting region between the source and drain electrodes; a charge-transporting layer (107) comprising a charge-transporting material extending across the semiconducting region and in electrical contact with the source and drain electrodes; an organic semiconducting layer (109) comprising an organic semiconductor extending across the semiconducting region; a gate electrode (113); and a gate dielectric (111) between the gate electrode and the organic semiconducting layer.

公开(公告)号：US09620718B2

公开(公告)日：2017-04-11

申请号：US14409804

申请日：2013-06-17

Applicant: Cambridge Display Technology Limited

Inventor： Christopher Newsome

IPC: H01L51/00 ,  H01L21/02 ,  H01L51/05

CPC classification number: H01L51/0039 ,  H01L21/02118 ,  H01L51/0007 ,  H01L51/0026 ,  H01L51/0035 ,  H01L51/0043 ,  H01L51/0074 ,  H01L51/0512 ,  H01L51/0566

Abstract: A method for preparing a semiconducting layer of an organic electronic device comprising: (i) depositing said semiconducting layer from a solution comprising a polymeric semiconductor, a non-polymeric semiconductor, a first aromatic solvent and a second aromatic solvent, wherein said second aromatic solvent has a boiling point that is at least 15° C. higher than the boiling point of said first aromatic solvent; and (ii) heating said deposited layer to evaporate said solvent, wherein said first aromatic solvent is of formula (I): wherein R1 is selected from C1-6 alkyl and OC1-6 alkyl; and R2 and R3 are each independently selected from H and CC1-6 alkyl.