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    4,7-PHENANTHROLINE CONTAINING POLYMER AND ORGANIC ELECTRONIC DEVICE
    1.
    发明申请
    4,7-PHENANTHROLINE CONTAINING POLYMER AND ORGANIC ELECTRONIC DEVICE 审中-公开
    含有聚合物和有机电子器件的4,7-苯并三唑

    公开(公告)号：US20160315265A1

    公开(公告)日：2016-10-27

    申请号：US15101561

    申请日：2014-11-25

    Applicant: CAMBRIDGE DISPLAY TECHNOLOGY LIMITED

    Inventor： Jeremy Burroughes ,  Tania Zuberi ,  Rajesh Kumar Janarthanan ,  Kandasamy Shanmugasundaram

    IPC: H01L51/00 ,  C09K11/06 ,  C09K11/02 ,  C08G61/12 ,  C07D471/04

    CPC classification number: H01L51/0035 ,  C07D471/04 ,  C08G61/12 ,  C08G61/122 ,  C08G2261/3241 ,  C09K11/025 ,  C09K11/06 ,  C09K2211/1466 ,  H01L51/5004 ,  H01L51/5016 ,  H01L51/5056 ,  H01L51/56 ,  H01L2251/552

    Abstract: A polymer comprises repeat units of formula (I): wherein: R1 independently in each occurrence is a substituent, and two substituents R1 may be linked to form a ring; R2 in each occurrence independently is H or a substituent, and two substituents R2 may be linked to form a ring; R3 independently in each occurrence is a substituent; Ar1 independently in each occurrence is an aryl or heteroaryl group that may be unsubstituted or substituted with one or more substituents; x is 0, 1 or 2; y is 0, 1 or 2; and z independently in each occurrence is 0, 1 or 2. Such repeat units have a relatively deep LUMO level that may reduce the barrier to transport of electrons from the electron-transporting layer to the light-emitting layer of an organic light emitting diode having an active layer comprising such a polymer.

    Abstract translation: 聚合物包含式（I）的重复单元：其中：R 1在每次出现时独立地为取代基，并且两个取代基R 1可以连接形成环; R2各自独立地为H或取代基，两个取代基R2可以连接形成环; R3各自独立地为取代基; Ar1各自独立地为可以是未取代的或被一个或多个取代基取代的芳基或杂芳基; x是0,1或2; y为0,1或2; 并且z在每次出现时独立地为0,1或2.这样的重复单元具有相对较深的LUMO能级，其可以减少电子从电子传输层传输到具有有机发光二极管的有机发光二极管的发光层的障碍， 包含这种聚合物的活性层。

    Optoelectronic device
    2.
    发明授权
    Optoelectronic device 有权
    光电器件

    公开(公告)号：US09461262B2

    公开(公告)日：2016-10-04

    申请号：US14385486

    申请日：2013-03-13

    Applicant: CAMBRIDGE DISPLAY TECHNOLOGY LIMITED

    Inventor： Surama Malik ,  Julian Carter ,  Laurence Scullion ,  Colin Baker ,  Arne Fleissner ,  Jeremy Burroughes

    IPC: H01L29/08 ,  H01L51/50 ,  H01L51/44 ,  H01L51/52 ,  H01L51/56 ,  H01L51/00

    CPC classification number: H01L51/5088 ,  H01L51/0035 ,  H01L51/0037 ,  H01L51/0038 ,  H01L51/0039 ,  H01L51/441 ,  H01L51/445 ,  H01L51/5212 ,  H01L51/5275 ,  H01L51/56 ,  H01L2251/5361 ,  Y02E10/549

    Abstract: This invention generally relates to an optoelectronic device and a method of fabricating such a device, and more particularly to an optoelectronic device comprising an anode layer, a semiconductive layer provided over the anode layer, and a cathode layer provided over the semiconductive layer, the anode layer comprising a plurality of electrically conductive tracks connected together and spaced apart from one another with gaps therebetween, the device further comprising a first and one or more further hole injection layers provided between the anode layer and the semiconductive layer and extending across said gaps, wherein the first hole injection layer has a conductivity greater than the conductivity of the one or more further hole injection layers.

    Abstract translation: 本发明一般涉及一种制造这种器件的光电子器件及其制造方法，尤其涉及一种包括阳极层，设在阳极层上的半导体层和设置在半导体层上的阴极层的光电器件，阳极 层包括连接在一起并且彼此间隔开的多个导电轨道，该装置还包括设置在阳极层和半导体层之间并延伸穿过所述间隙的第一和一个或多个另外的空穴注入层，其中 第一空穴注入层的导电率大于一个或多个其它空穴注入层的导电率。

    Doping organic semiconductors
    5.
    发明授权
    Doping organic semiconductors 有权

    公开(公告)号：US10559753B2

    公开(公告)日：2020-02-11

    申请号：US15508619

    申请日：2015-08-27

    Applicant: Cambridge Display Technology Limited

    Inventor： Jeremy Burroughes ,  Christopher Newsome ,  Daniel Tobjörk ,  Mark Dowling

    IPC: H01L51/00 ,  H01L51/10 ,  H01L51/05 ,  H01L27/28

    Abstract: We describe a method for reducing a parasitic resistance at an interface between a conducting electrode region and an organic semiconductor in a thin film transistor, the method comprising: providing a solution comprising a dopant for doping said semiconductor, and depositing said solution onto said semiconductor and/or said conducting electrode region to selectively dope said semiconductor adjacent said interface between said conducting electrode region and said semiconductor, wherein depositing said solution comprises inkjet-printing said solution.

    LIGHT FILTER AND SENSOR
    6.
    发明申请
    LIGHT FILTER AND SENSOR 审中-公开

    公开(公告)号：US20190219750A1

    公开(公告)日：2019-07-18

    申请号：US16324362

    申请日：2017-07-28

    Applicant: Cambridge Display Technology Limited ,  Sumitomo Chemical Company Limited

    Inventor： Jeremy Burroughes ,  Andrew Lee ,  Jonathan Behrendt

    IPC: G02B5/22 ,  G01N21/64

    CPC classification number: G02B5/223 ,  G01N21/645 ,  G01N2021/6471 ,  G02B5/22

    Abstract: A sensor comprising a light source (103); a photodetector (105); a sample receptacle such as a microfluidic device (101) between the light source and the photodetector; and one or both of a first light filter (107) and a second light filter (109) wherein the first light filter is provided between the sample receptacle and the photodetector and the second light filter is provided between the sample receptacle and the light source. The first light filter may comprise tartrazine. The second light filter may comprise Coomassie violet R200, Victoria Blue B or acid fuchsin. In use, light hν1 emitted from the light source is absorbed by a luminescent indicator in the sample receptacle which then emits light hν2 detected by the photodetector.

    ORGANIC ELECTRONIC DEVICE MANUFACTURING TECHNIQUES
    10.
    发明申请
    ORGANIC ELECTRONIC DEVICE MANUFACTURING TECHNIQUES 审中-公开
    有机电子设备制造技术

    公开(公告)号：US20150188052A1

    公开(公告)日：2015-07-02

    申请号：US14410859

    申请日：2013-06-27

    Applicant: Cambridge Display Technology Limited

    Inventor： Jeremy Burroughes

    IPC: H01L51/00 ,  H01L51/56

    CPC classification number: H01L51/0026 ,  H01L51/0013 ,  H01L51/0014 ,  H01L51/0015 ,  H01L51/0021 ,  H01L51/0096 ,  H01L51/0508 ,  H01L51/0558 ,  H01L51/105 ,  H01L51/42 ,  H01L51/4253 ,  H01L51/442 ,  H01L51/5012 ,  H01L51/504 ,  H01L51/5206 ,  H01L51/56 ,  Y02E10/549 ,  Y02P70/521

    Abstract: We describe method of manufacturing an organic electronic device, the method comprising: providing an intermediate stage substrate (200), the substrate bearing a plurality of layers of material of said organic electronic device, the layers including at least one conducting layer in thermal contact with at least one organic layer of said organic electronic device; processing said intermediate stage substrate by inductive heating of said conducting material to heat said at least one organic layer to produce a processed substrate; and using said processed substrate to provide said organic electronic device.

    Abstract translation: 我们描述了制造有机电子器件的方法，所述方法包括：提供中间级衬底（200），所述衬底承载所述有机电子器件的多层材料层，所述层包括至少一个与所述有机电子器件热接触的导电层 所述有机电子器件的至少一个有机层; 通过所述导电材料的感应加热来处理所述中间级基底，以加热所述至少一个有机层以产生经处理的基底; 并使用所述处理过的衬底提供所述有机电子器件。

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