公开(公告)号：US08513712B2

公开(公告)日：2013-08-20

申请号：US12568575

申请日：2009-09-28

申请人： Chen-Liang Chu ,  Fei-Yuh Chen ,  Chih-Wen Yao

发明人： Chen-Liang Chu ,  Fei-Yuh Chen ,  Chih-Wen Yao

IPC分类号： H01L29/80 ,  H01L29/66

CPC分类号： H01L29/4238 ,  H01L29/0619 ,  H01L29/0653 ,  H01L29/401 ,  H01L29/42316 ,  H01L29/42376 ,  H01L29/66477 ,  H01L29/66659 ,  H01L29/78 ,  H01L29/7835

摘要： The present disclosure provides an apparatus and method for fabricating a semiconductor gate. The apparatus includes, a substrate having an active region and a dielectric region that forms an interface with the active region; a gate electrode located above a portion of the active region and a portion of the dielectric region; and a dielectric material disposed within the gate electrode, the dielectric material being disposed near the interface between the active region and the dielectric region. The method includes, providing a substrate having an active region and a dielectric region that forms an interface with the active region; forming a gate electrode over the substrate, the gate electrode having an opening near a region of the gate electrode that is above the interface; and filling the opening with a dielectric material.

公开(公告)号：US07977743B2

公开(公告)日：2011-07-12

申请号：US12392343

申请日：2009-02-25

申请人： Chen-Liang Chu ,  Chun-Ting Liao ,  Fei-Yuh Chen ,  Tsung-Yi Huang

发明人： Chen-Liang Chu ,  Chun-Ting Liao ,  Fei-Yuh Chen ,  Tsung-Yi Huang

IPC分类号： H01L29/06

CPC分类号： H01L29/0847 ,  H01L29/66659 ,  H01L29/7835

摘要： A semiconductor device is provided. In an embodiment, the device includes a substrate and a transistor formed on the substrate. The transistor may include a gate structure, a source region, and a drain region. The drain region includes an alternating-doping profile region. The alternating-doping profile region may include alternating regions of high and low concentrations of a dopant. In an embodiment, the transistor is a high voltage transistor.

摘要翻译： 提供半导体器件。 在一个实施例中，该器件包括衬底和形成在衬底上的晶体管。 晶体管可以包括栅极结构，源极区和漏极区。 漏极区域包括交替掺杂分布区域。 交变掺杂剖面区域可以包括掺杂剂的高浓度和低浓度的交替区域。 在一个实施例中，晶体管是高压晶体管。

公开(公告)号：US20100213542A1

公开(公告)日：2010-08-26

申请号：US12392343

申请日：2009-02-25

申请人： Chen-Liang Chu ,  Chun-Ting Liao ,  Fei-Yuh Chen ,  Tsung-Yi Huang

发明人： Chen-Liang Chu ,  Chun-Ting Liao ,  Fei-Yuh Chen ,  Tsung-Yi Huang

IPC分类号： H01L29/78

CPC分类号： H01L29/0847 ,  H01L29/66659 ,  H01L29/7835

摘要： A semiconductor device is provided. In an embodiment, the device includes a substrate and a transistor formed on the substrate. The transistor may include a gate structure, a source region, and a drain region. The drain region includes an alternating-doping profile region. The alternating-doping profile region may include alternating regions of high and low concentrations of a dopant. In an embodiment, the transistor is a high voltage transistor.

摘要翻译： 提供半导体器件。 在一个实施例中，该器件包括衬底和形成在衬底上的晶体管。 晶体管可以包括栅极结构，源极区和漏极区。 漏极区域包括交替掺杂分布区域。 交变掺杂剖面区域可以包括掺杂剂的高浓度和低浓度的交替区域。 在一个实施例中，晶体管是高压晶体管。

公开(公告)号：US07332387B2

公开(公告)日：2008-02-19

申请号：US11324454

申请日：2006-01-03

申请人： Chen-Liang Chu

发明人： Chen-Liang Chu

IPC分类号： H01L21/8234

CPC分类号： H01L21/28211 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/28176 ,  H01L29/42368 ,  H01L2924/0002 ,  H01L2924/00

摘要： A MOSFET structure and a method of forming it are described. The thickness of a portion of the gate dielectric layer of the MOSFET structure adjacent to the drain region is increased to form a bird's beak structure. The gate-to-drain overlap capacitance is reduced by the bird's beak structure.

摘要翻译： 描述MOSFET结构及其形成方法。 与漏极区相邻的MOSFET结构的栅极电介质层的一部分的厚度增加以形成鸟的喙结构。 通过鸟的喙结构减小了栅极到漏极的重叠电容。

公开(公告)号：US20050106823A1

公开(公告)日：2005-05-19

申请号：US10783258

申请日：2004-02-20

申请人： Chen-Liang Chu

发明人： Chen-Liang Chu

IPC分类号： H01L21/265 ,  H01L21/28 ,  H01L21/336 ,  H01L23/62 ,  H01L29/423

CPC分类号： H01L21/26506 ,  H01L21/26586 ,  H01L21/28176 ,  H01L21/28211 ,  H01L29/42368 ,  H01L2924/0002 ,  H01L2924/00

摘要： A MOSFET structure and a method of forming it are described. The thickness of a portion of the gate dielectric layer of the MOSFET structure adjacent to the drain region is increased to form a bird's beak structure. The gate-to-drain overlap capacitance is reduced by the bird's beak structure.

摘要翻译： 描述MOSFET结构及其形成方法。 与漏极区相邻的MOSFET结构的栅极电介质层的一部分的厚度增加以形成鸟的喙结构。 通过鸟的喙结构减小了栅极到漏极的重叠电容。

公开(公告)号：US20060110886A1

公开(公告)日：2006-05-25

申请号：US11324454

申请日：2006-01-03

申请人： Chen-Liang Chu

发明人： Chen-Liang Chu

IPC分类号： H01L21/336

CPC分类号： H01L21/28211 ,  H01L21/26506 ,  H01L21/26586 ,  H01L21/28176 ,  H01L29/42368 ,  H01L2924/0002 ,  H01L2924/00

摘要： A MOSFET structure and a method of forming it are described. The thickness of a portion of the gate dielectric layer of the MOSFET structure adjacent to the drain region is increased to form a bird's beak structure. The gate-to-drain overlap capacitance is reduced by the bird's beak structure.

摘要翻译： 描述MOSFET结构及其形成方法。 与漏极区相邻的MOSFET结构的栅极电介质层的一部分的厚度增加以形成鸟的喙结构。 通过鸟的喙结构减小了栅极到漏极的重叠电容。