公开(公告)号：US20120246886A1

公开(公告)日：2012-10-04

申请号：US13512504

申请日：2009-11-30

Applicant: Satoshi Matsumoto ,  Chih Hung Lin ,  Ke Jyun Wu

Inventor： Satoshi Matsumoto ,  Chih Hung Lin ,  Ke Jyun Wu

IPC: A44B19/32 ,  B05D5/00 ,  A44B19/08 ,  B05D1/38

CPC classification number: A44B19/32 ,  A44B19/02 ,  Y10T24/25 ,  Y10T24/2505 ,  Y10T24/2514 ,  Y10T24/2539 ,  Y10T24/2543

Abstract: There is provided a liquid-tight slide fastener capable of sufficiently ensuring waterproof property regardless of where fastener elements are formed and capable of sufficiently ensuring attachment strength of the fastener elements to fastener tapes provided with liquid-tight layers. There is also provided a manufacturing method for the liquid-tight slide fastener. The liquid-tight slide fastener includes a pair of fastener tapes that include a pair of tape members, core sections respectively provided on opposing tape edges of the pair of tape members, and liquid-tight layers formed on one side of the pair of tape members; a pair of fastener element rows; and a slider. The liquid-tight layers are formed with gaps to the core sections in a width direction of the fastener tapes. The fastener elements are attached to the core sections.

Abstract translation: 提供了一种能够充分确保防水性能的液密拉链，而不管紧固件元件何时形成，并且能够充分确保拉链件与设置有液密层的拉链带的附接强度。 还提供了一种用于液密拉链的制造方法。 液密拉链包括一对拉链带，其包括一对带构件，分别设置在一对带构件的相对带边缘上的芯部分，以及形成在一对带构件的一侧上的液密层 ; 一对拉链牙列; 和滑块。 液密层在拉链带的宽度方向上与芯部分形成间隙。 紧固件元件附接到芯部分。

公开(公告)号：US5920091A

公开(公告)日：1999-07-06

申请号：US15448

申请日：1998-01-29

Applicant: Chih Hung Lin

Inventor： Chih Hung Lin

IPC: H01L27/144 ,  H01L31/105 ,  H01L29/04

CPC classification number: H01L27/144 ,  H01L31/1055

Abstract: An improved structure of a photo sensor is disclosed. Its structural feature is that a PIN photo diode is allocated in a MOSFET, by means of enlarging the detected small photo current from PIN photo diode by the MOSFET; so as to avoid the shortcoming of conventional PIN photo diode, and enhance the sensitivity of photo sensing.

Abstract translation: 公开了一种改进的光传感器的结构。 其结构特征是通过MOSFET从PIN光电二极管放大检测到的小光电流，在MOSFET中分配PIN光电二极管; 以避免常规PIN光电二极管的缺点，提高光感测灵敏度。