公开(公告)号：US20180102393A1

公开(公告)日：2018-04-12

申请号：US15707423

申请日：2017-09-18

Applicant: InnoLux Corporation

Inventor： Yu-Tsung LIU ,  Te-Yu LEE

IPC: H01L27/146 ,  H01L31/0376

CPC classification number: H01L27/14643 ,  H01L27/14636 ,  H01L27/14692 ,  H01L31/03762 ,  H01L31/1055

Abstract: A photo detector device is provided. The photo detector device includes a substrate, a first metal layer, a first interlayer dielectric layer, an active layer, a photodiode, and a second metal layer. The first metal layer is disposed on the substrate, wherein the first metal layer includes a gate line and a gate, and the gate is electrically connected to the gate line. The first interlayer dielectric layer is disposed on the first metal layer. The active layer is electrically insulated from the gate and partially overlaps the gate. The photodiode is disposed on the substrate. The second metal layer is disposed on the first interlayer dielectric layer, wherein the second metal layer includes a data line and a bias line, and the bias line is disposed on the photodiode.

公开(公告)号：US09939586B2

公开(公告)日：2018-04-10

申请号：US15419694

申请日：2017-01-30

Applicant: Erman Timurdogan ,  Michael R. Watts ,  Zhan Su ,  Ehsan Shah Hosseini ,  Jie Sun

Inventor： Erman Timurdogan ,  Michael R. Watts ,  Zhan Su ,  Ehsan Shah Hosseini ,  Jie Sun

IPC: G02B6/12 ,  G02B6/293 ,  G02B6/122 ,  H01L31/105 ,  H01L31/0352

CPC classification number: G02B6/29338 ,  G02B6/122 ,  G02B6/29395 ,  G02B2006/12061 ,  G02B2006/12123 ,  H01L31/035281 ,  H01L31/105 ,  H01L31/1055 ,  Y02E10/50

Abstract: A photodetector includes a germanium layer evanescently coupled to a ring resonator. The ring resonator increases the interaction length between light guided by the ring resonator and the germanium layer without increasing the size of the photodetector, thereby keeping the photodetector's dark current at a low level. The germanium layer absorbs the guided light and converts the absorbed light into electrical signals for detection. The increased interaction length in the resonator allows efficient transfer of light from the resonator to the germanium layer via evanescently coupling. In addition, the internal and external quality factors (Q) of the ring resonator can be matched to achieve (nearly) full absorption of light in the germanium with high quantum efficiency.

公开(公告)号：US20180090636A1

公开(公告)日：2018-03-29

申请号：US15656212

申请日：2017-07-21

Applicant: Renesas Electronics Corporation

Inventor： Tomoo NAKAYAMA

IPC: H01L31/105 ,  H01L31/028 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/02

CPC classification number: H01L31/1055 ,  G02B6/12002 ,  G02B6/43 ,  G02B2006/12061 ,  H01L31/02005 ,  H01L31/02161 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/035272 ,  H01L31/1804

Abstract: A provided semiconductor device includes a Ge photodiode having proper diode characteristics. A groove is provided on a germanium growth protective film, a p-type silicon layer, and a first insulating film from the top surface of the germanium growth protective film without reaching the major surface of a semiconductor substrate. An i-type germanium layer and an n-type germanium layer are embedded in the groove with a seed layer interposed between the layers and the groove, the seed layer being made of amorphous silicon, polysilicon, or silicon germanium. The i-type germanium layer and the n-type germanium layer do not protrude from the top surface of the germanium growth protective film, thereby forming a flat second insulating film having a substantially even thickness on the n-type germanium layer and the germanium growth protective film.

公开(公告)号：US09564549B2

公开(公告)日：2017-02-07

申请号：US14429131

申请日：2013-09-19

Applicant: IHP GmbH—Innovations for High Performance Microelectronics/Leibniz-Institut Fur Innovative Mikroelektro

Inventor： Dieter Knoll ,  Stefan Lischke ,  Lars Zimmermann ,  Yuji Yamamoto ,  Andreas Trusch

IPC: H01L31/105 ,  H01L31/0224 ,  H01L31/0232 ,  H01L31/028

CPC classification number: H01L31/105 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/1055 ,  Y02E10/547

Abstract: A diode comprising a light-sensitive germanium region which is totally embedded in silicon and forms with the silicon a lower interface and lateral interfaces, wherein the lateral interfaces do not extend perpendicularly, but obliquely to the lower interface and therefore produce a faceted form.

Abstract translation: 一种二极管，其包括完全嵌入硅中并与硅形成下界面和侧界面的光敏锗区，其中侧向界面不垂直地延伸，而是倾斜地延伸到下界面，因此产生刻面形式。

公开(公告)号：US09484486B2

公开(公告)日：2016-11-01

申请号：US14806844

申请日：2015-07-23

Applicant: Hydis Technologies Co., Ltd.

Inventor： Sung Jin Choi

IPC: H01L21/00 ,  H01L31/18 ,  H01L31/115 ,  H01L31/105 ,  H01L31/20

CPC classification number: H01L31/1888 ,  H01L31/1055 ,  H01L31/115 ,  H01L31/1884 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

Abstract: Provided herein is a PIN diode, a manufacturing method thereof, an x-ray detector using the PIN diode, and a manufacturing method thereof, the PIN diode manufacturing method according to an embodiment of the present disclosure including forming a lower electrode layer, and forming a lower electrode by etching the lower electrode layer; depositing a PIN layer for formation of a PIN structure above the lower electrode, and depositing an upper electrode layer for formation of the upper electrode above the PIN layer; forming a photo resist pattern above the upper electrode layer, and forming the upper electrode by etching the upper electrode layer having the photo resist pattern as a mask; forming the PIN structure by etching the PIN layer; etching an edge area of the upper electrode having the photo resist pattern as a mask; and removing the photo resist pattern.

Abstract translation: 本发明提供一种PIN二极管及其制造方法，使用PIN二极管的x射线检测器及其制造方法，根据本公开的实施方式的PIN二极管制造方法，包括形成下电极层，以及形成 通过蚀刻下电极层来形成下电极; 沉积用于在下电极上形成PIN结构的PIN层，以及沉积用于在PIN层上形成上电极的上电极层; 在上电极层上形成光致抗蚀剂图案，并通过蚀刻具有光致抗蚀剂图案的上电极层作为掩模来形成上电极; 通过蚀刻PIN层形成PIN结构; 蚀刻具有光刻胶图案的上电极的边缘区域作为掩模; 并去除光刻胶图案。

公开(公告)号：US20160293649A1

公开(公告)日：2016-10-06

申请号：US15177460

申请日：2016-06-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiyuki KUROKAWA ,  Takayuki IKEDA ,  Hikaru TAMURA ,  Munehiro KOZUMA ,  Masataka IKEDA ,  Takeshi AOKI

IPC: H01L27/146 ,  H04N5/361 ,  H04N5/374 ,  H04N5/378 ,  H01L29/786 ,  H01L31/105

CPC classification number: H01L27/14616 ,  H01L27/14603 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643 ,  H01L29/7869 ,  H01L31/1055 ,  H04N5/361 ,  H04N5/374 ,  H04N5/378

Abstract: In a CMOS image sensor in which a plurality of pixels is arranged in a matrix, a transistor in which a channel formation region includes an oxide semiconductor is used for each of a charge accumulation control transistor and a reset transistor which are in a pixel portion. After a reset operation of the signal charge accumulation portion is performed in all the pixels arranged in the matrix, a charge accumulation operation by the photodiode is performed in all the pixels, and a read operation of a signal from the pixel is performed per row. Accordingly, an image can be taken without a distortion.

公开(公告)号：US20160254407A1

公开(公告)日：2016-09-01

申请号：US14947718

申请日：2015-11-20

Applicant: Shih-Yuan WANG ,  Shih-Ping WANG

Inventor： Shih-Yuan WANG ,  Shih-Ping WANG

IPC: H01L31/107 ,  H01L31/0236 ,  H01L31/0232 ,  H01L31/024 ,  G02B6/122 ,  H01L31/054 ,  H01L23/66 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/0304 ,  H01L31/0745 ,  H01L31/028 ,  H01L31/02

CPC classification number: H01L31/035272 ,  G02B6/122 ,  G02B6/136 ,  G02B2006/12097 ,  G02B2006/12176 ,  H01L23/66 ,  H01L31/02005 ,  H01L31/02019 ,  H01L31/022408 ,  H01L31/02327 ,  H01L31/02363 ,  H01L31/024 ,  H01L31/028 ,  H01L31/0284 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/035227 ,  H01L31/035281 ,  H01L31/054 ,  H01L31/0745 ,  H01L31/075 ,  H01L31/105 ,  H01L31/1055 ,  H01L31/107 ,  H01L31/1075 ,  H01L31/1804 ,  H01L31/184 ,  H01L31/1844 ,  H01L2223/6627 ,  Y02E10/52 ,  Y02E10/548

Abstract: Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

Abstract translation: 描述了使用微结构增强半导体中的光子吸收的技术。 诸如支柱和/或孔的微结构有效地增加了有效的吸收长度，导致光子的更大的吸收。 对于硅光电二极管和硅雪崩光电二极管，使用微结构进行吸收增强可以在波长为850 nm的光子上产生超过10 Gb / s的带宽，量子效率约为90％以上。

公开(公告)号：US20160027952A1

公开(公告)日：2016-01-28

申请号：US14806844

申请日：2015-07-23

Applicant: Hydis Technologies Co., Ltd.

Inventor： Sung Jin Choi

IPC: H01L31/18 ,  H01L31/115

CPC classification number: H01L31/1888 ,  H01L31/1055 ,  H01L31/115 ,  H01L31/1884 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

Abstract: Provided herein is a PIN diode, a manufacturing method thereof, an x-ray detector using the PIN diode, and a manufacturing method thereof, the PIN diode manufacturing method according to an embodiment of the present disclosure including forming a lower electrode layer, and forming a lower electrode by etching the lower electrode layer; depositing a PIN layer for formation of a PIN structure above the lower electrode, and depositing an upper electrode layer for formation of the upper electrode above the PIN layer; forming a photo resist pattern above the upper electrode layer, and forming the upper electrode by etching the upper electrode layer having the photo resist pattern as a mask; forming the PIN structure by etching the PIN layer; etching an edge area of the upper electrode having the photo resist pattern as a mask; and removing the photo resist pattern.

Abstract translation: 本发明提供一种PIN二极管及其制造方法，使用PIN二极管的x射线检测器及其制造方法，根据本公开的实施方式的PIN二极管制造方法，包括形成下电极层，以及形成 通过蚀刻下电极层来形成下电极; 沉积用于在下电极上形成PIN结构的PIN层，以及沉积用于在PIN层上形成上电极的上电极层; 在上电极层上形成光致抗蚀剂图案，并通过蚀刻具有光致抗蚀剂图案的上电极层作为掩模来形成上电极; 通过蚀刻PIN层形成PIN结构; 蚀刻具有光刻胶图案的上电极的边缘区域作为掩模; 并去除光刻胶图案。

公开(公告)号：US09190446B1

公开(公告)日：2015-11-17

申请号：US14551091

申请日：2014-11-24

Applicant: Au Optronics Corporation

Inventor： Tsung-Han Chen ,  Chin-Mao Lin

IPC: H01L27/146 ,  H01L29/786 ,  H01L31/028 ,  H01L31/0376 ,  H01L31/105 ,  H01L31/0224

CPC classification number: H01L31/03762 ,  H01L27/14603 ,  H01L27/14616 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14692 ,  H01L29/78669 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/1055 ,  Y02E10/547

Abstract: A sensing apparatus that includes a plurality of sensing pixels is provided. The sensing pixels are arranged in an array, and each of the sensing pixels includes an active device and a sensing device. The sensing device is electrically connected to the active device, and the sensing device includes a first electrode layer, an amorphous silicon layer, a second electrode layer, and a graphene layer. The amorphous silicon layer is located on the first electrode layer. The second electrode layer is located on the amorphous silicon layer and has an opening. The graphene layer is in contact with the second electrode layer and the amorphous silicon layer.

Abstract translation: 提供了包括多个感测像素的感测装置。 感测像素被布置成阵列，并且每个感测像素包括有源装置和感测装置。 感测装置电连接到有源器件，并且感测装置包括第一电极层，非晶硅层，第二电极层和石墨烯层。 非晶硅层位于第一电极层上。 第二电极层位于非晶硅层上并具有开口。 石墨烯层与第二电极层和非晶硅层接触。

公开(公告)号：US09159866B2

公开(公告)日：2015-10-13

申请号：US13916790

申请日：2013-06-13

Applicant: Won-Kyu Lee ,  Jae-Hwan Oh ,  Seong-Hyun Jin ,  Young-Jin Chang ,  Jae-Beom Choi

Inventor： Won-Kyu Lee ,  Jae-Hwan Oh ,  Seong-Hyun Jin ,  Young-Jin Chang ,  Jae-Beom Choi

IPC: H01L21/00 ,  H01L31/18 ,  H01L31/105 ,  G02F1/133 ,  H01L27/32

CPC classification number: H01L31/1872 ,  G02F1/13318 ,  H01L27/3269 ,  H01L31/1055 ,  Y02E10/50 ,  Y02P70/521

Abstract: A photo sensor, a method of manufacturing the photo sensor, and a display apparatus, the photo sensor including a substrate; a light receiving unit on the substrate, the light receiving unit including an amorphous semiconductor material; a first adjacent unit and a second adjacent unit formed as one body with the light receiving unit, the first adjacent unit and the second adjacent unit being separated from each other by the light receiving unit; a first photo sensor electrode electrically connected to the first adjacent unit; and a second photo sensor electrode electrically connected to the second adjacent unit, wherein at least one of the first adjacent unit and the second adjacent unit includes a crystalline semiconductor material.

Abstract translation: 光传感器，光传感器的制造方法以及显示装置，所述光传感器包括基板; 在所述基板上的受光单元，所述受光单元包括非晶半导体材料; 第一相邻单元和第二相邻单元，其与光接收单元形成为一体，第一相邻单元和第二相邻单元由光接收单元彼此分离; 电连接到第一相邻单元的第一光电传感器电极; 和与第二相邻单元电连接的第二光电传感器电极，其中第一相邻单元和第二相邻单元中的至少一个包括晶体半导体材料。