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11.发明申请Memory circuit having a resistive memory cell and method for operating such a memory circuit 审中-公开具有电阻存储单元的存储器电路和用于操作这种存储器电路的方法公开(公告)号：US20070195580A1
公开(公告)日：2007-08-23
申请号：US11361062
申请日：2006-02-23
CPC分类号： G11C7/12 , G11C7/02 , G11C11/16 , G11C13/0011 , G11C13/0026 , G11C13/003 , G11C2213/76 , G11C2213/79
摘要： The invention relates to a memory circuit comprising a resistive memory cell having a selection transistor and a resistive memory element connected in series, wherein the resistive memory element is coupled to a plate potential; and a control circuit to control the selection transistor by means of an activation signal a pre-charge circuit coupled with a node between the selection transistor and the resistive memory element and to apply a compensation potential to the node; wherein the control circuit controls the pre-charge circuit so that a compensation potential is applied to the node prior to a level transition of the activation signal.
摘要翻译： 本发明涉及一种包括具有串联连接的选择晶体管和电阻性存储元件的电阻式存储单元的存储器电路，其中该电阻式存储器元件耦合到一个电位电位; 以及控制电路，通过激活信号控制所述选择晶体管，所述预充电电路与所述选择晶体管和所述电阻性存储器元件之间的节点耦合，并向所述节点施加补偿电位; 其中所述控制电路控制所述预充电电路，使得在所述激活信号的电平转换之前将补偿电位施加到所述节点。
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公开(公告)号：US20080239788A1
公开(公告)日：2008-10-02
申请号：US11693391
申请日：2007-03-29
IPC分类号： G11C11/00
CPC分类号： G11C13/0011 , G11C13/0004 , G11C13/004 , G11C13/0069 , G11C2013/0047 , G11C2013/009
摘要： An integrated circuit having a resistance-based or resistively switching memory cell, and a method for operating a resistively switching memory cell is disclosed. One embodiment is adapted to be put in a low-resistance state by applying a first threshold voltage and in a high-resistance state by applying a second threshold voltage, wherein reading out of the data content from the memory cell is performed by applying a voltage to the memory cell in the range of the first or second threshold voltage or a higher voltage.
摘要翻译： 公开了一种具有电阻或电阻切换存储单元的集成电路，以及用于操作电阻切换存储单元的方法。 一个实施例适于通过施加第一阈值电压并且通过施加第二阈值电压处于高电阻状态而被置于低电阻状态，其中通过施加电压来执行从存储器单元读出数据内容 在第一或第二阈值电压或较高电压的范围内到存储单元。
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公开(公告)号：US07656697B2
公开(公告)日：2010-02-02
申请号：US11693391
申请日：2007-03-29
IPC分类号： G11C11/00
CPC分类号： G11C13/0011 , G11C13/0004 , G11C13/004 , G11C13/0069 , G11C2013/0047 , G11C2013/009
摘要： An integrated circuit having a resistance-based or resistively switching memory cell, and a method for operating a resistively switching memory cell is disclosed. One embodiment is adapted to be put in a low-resistance state by applying a first threshold voltage and in a high-resistance state by applying a second threshold voltage, wherein reading out of the data content from the memory cell is performed by applying a voltage to the memory cell in the range of the first or second threshold voltage or a higher voltage.
摘要翻译： 公开了一种具有电阻或电阻切换存储单元的集成电路，以及用于操作电阻切换存储单元的方法。 一个实施例适于通过施加第一阈值电压并且通过施加第二阈值电压处于高电阻状态而被置于低电阻状态，其中通过施加电压来执行从存储器单元读出数据内容 在第一或第二阈值电压或较高电压的范围内到存储单元。
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