公开(公告)号：US20210408977A1

公开(公告)日：2021-12-30

申请号：US16913374

申请日：2020-06-26

Applicant: Cree, Inc.

Inventor： Haedong Jang ,  Madhu Chidurala ,  Richard Wilson

IPC: H03F3/19 ,  H03L7/099 ,  H03F3/24

Abstract: Inductance-capacitance (LC) resonators having different resonant frequencies, and radio frequency (RF) transistor amplifiers including the same. One usage of such LC resonators is to implement RF short/DC block circuits. A RF transistor amplifier may include a transistor on a base of the RF transistor amplifier coupled to an input and an output of the RF transistor amplifier; a first inductance-capacitance (LC) resonator comprising a first inductance and a first capacitance; and a second LC resonator comprising a second inductance and a second capacitance. The first LC resonator may be configured to resonate at a first frequency, and the second LC resonator may be configured to resonate at a second frequency different from the first frequency.

公开(公告)号：US11031913B2

公开(公告)日：2021-06-08

申请号：US16414955

申请日：2019-05-17

Applicant: Cree, Inc.

Inventor： Madhu Chidurala ,  Marvin Marbell ,  Simon Ward

IPC: H03F1/10 ,  H03F1/02 ,  H03F1/56 ,  H03F3/213

Abstract: In integrating RF power amplifier circuits on a package, at least one bias voltage is coupled to at least one amplifier circuit on the package via two or more pins/connectors. In particular, at least one of a gate and drain bias voltage is coupled to one or more amplifier circuits via at least two pins/connectors. In some embodiments, the two or more bias voltage pins/connectors are connected together on the package, placing the pins/connectors in parallel, which reduces an inductance associated with the pins/connectors. In some embodiments, at least of the two pins/connectors connected to the same bias voltage are disposed on either side of an RF signal pin/conductor, simplifying the routing of signals on the package, affording greater flexibility of placement and routing on the package.