公开(公告)号：US11201591B2

公开(公告)日：2021-12-14

申请号：US16358985

申请日：2019-03-20

Applicant: Cree, Inc.

Inventor： Haedong Jang ,  Sonoko Aristud ,  Marvin Marbell ,  Madhu Chidurala

IPC: H03F3/68 ,  H03F1/02 ,  H03F1/56 ,  H03F3/19 ,  H03F3/21

Abstract: In an asymmetric Doherty amplifier circuit, one or more shunt reactive components are added to at least one side of an impedance inverter connecting the amplifier outputs, to reduce a capacitance imbalance between the two amplifiers caused by their different parasitic capacitances. This enables the (adjusted) parasitic capacitances to be incorporated into a quarter-wavelength transmission line, having a 90-degree phase shift, for the impedance inverter. In one embodiment, a shunt inductance is connected between the impedance inverter, on the side of the larger amplifier, and RF signal ground. The inductance is sized to resonate away substantially the excess parasitic capacitance of the larger amplifier. In another embodiment, a shunt capacitor is connected on the side of the smaller amplifier, thus raising its total capacitance to substantially equal the parasitic capacitance of the larger amplifier. In other embodiments shunt inductances and/or capacitors may be added to one or both amplifiers, and sized to effectively control a characteristic impedance of the impedance inverter.

公开(公告)号：US20210384866A1

公开(公告)日：2021-12-09

申请号：US16893913

申请日：2020-06-05

Applicant: Cree, Inc.

Inventor： Richard Wilson ,  Marvin Marbell ,  Michael LeFevre

IPC: H03F1/02 ,  H03F1/32 ,  H03F1/56 ,  H03F3/21

Abstract: An amplifier includes an input matching network; at least one transistor; an input lead coupled to the at least one transistor; a ground terminal coupled to the transistor; an output lead coupled to the at least one transistor; an output matching circuit coupled to the output lead and to the at least one transistor; and a baseband impedance enhancement circuit having at least one reactive element coupled to the input matching network. The baseband impedance enhancement circuit is configured to reduce resonances of a baseband termination.

公开(公告)号：US11837457B2

公开(公告)日：2023-12-05

申请号：US17018721

申请日：2020-09-11

Applicant: Cree, Inc.

Inventor： Basim Noori ,  Marvin Marbell ,  Scott Sheppard ,  Kwangmo Chris Lim ,  Alexander Komposch ,  Qianli Mu

IPC: H01L23/538 ,  H01L23/498 ,  H01L23/66 ,  H01L23/00 ,  H01L25/16 ,  H01L25/00 ,  H01L29/417 ,  H01L29/423

CPC classification number: H01L23/5389 ,  H01L23/49811 ,  H01L23/5386 ,  H01L23/66 ,  H01L24/16 ,  H01L24/32 ,  H01L25/16 ,  H01L25/50 ,  H01L29/41741 ,  H01L29/4238 ,  H01L2223/6644 ,  H01L2223/6655 ,  H01L2224/16227 ,  H01L2224/32245 ,  H01L2924/1033 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/10344 ,  H01L2924/10346 ,  H01L2924/13064 ,  H01L2924/19105

Abstract: RF transistor amplifiers an RF transistor amplifier die having a semiconductor layer structure, an interconnect structure having first and second opposing sides, wherein the first side of the interconnect structure is adjacent a surface of the RF transistor amplifier die such that the interconnect structure and the RF transistor amplifier die are in a stacked arrangement, and one or more circuit elements on the first and/or second side of the interconnect structure.

公开(公告)号：US20210313935A1

公开(公告)日：2021-10-07

申请号：US17215456

申请日：2021-03-29

Applicant: Cree, Inc.

Inventor： Basim Noori ,  Marvin Marbell ,  Qianli Mu ,  Kwangmo Chris Lim ,  Michael E. Watts ,  Mario Bokatius ,  Jangheon Kim

IPC: H03F1/56 ,  H01L23/48 ,  H01L29/778 ,  H01L23/498 ,  H01L23/00 ,  H03F3/193

Abstract: RF transistor amplifiers include a Group III nitride-based RF transistor amplifier die that includes a semiconductor layer structure, a conductive source via that is connected to a source region of the Group III nitride-based RF transistor amplifier die, the conductive source via extending through the semiconductor layer structure, and an additional conductive via that extends through the semiconductor layer structure. A first end of the additional conductive via is connected to a first external circuit and a second end of the additional conductive via that is opposite the first end is connected to a first matching circuit.

公开(公告)号：US20220360233A1

公开(公告)日：2022-11-10

申请号：US17313616

申请日：2021-05-06

Applicant: Cree, Inc.

Inventor： Marvin Marbell ,  Jonathan Chang

IPC: H03F1/56 ,  H01L23/047 ,  H01L23/66 ,  H03F1/02 ,  H03F3/21

Abstract: A semiconductor device package includes a plurality of input leads, a plurality of transistor amplifier dies having inputs respectively coupled to the plurality of input leads, and a combined output lead configured to combine output signals received from the plurality of transistor amplifier dies and output a combined signal.

公开(公告)号：US20220157671A1

公开(公告)日：2022-05-19

申请号：US17097294

申请日：2020-11-13

Applicant: Cree, Inc.

Inventor： Marvin Marbell ,  Melvin Nava ,  Jeremy Fisher ,  Alexander Komposch

IPC: H01L23/047 ,  H01L23/66 ,  H01L21/48

Abstract: A radio frequency (RF) transistor amplifier includes a package submount. a package frame comprising an electrically insulating member and one or more conductive layers on the package submount and exposing a surface thereof, a transistor die on the surface of the package submount and comprising respective terminals that are electrically connected to the package frame, a protective member covering the transistor die, and one or more electrical components that are attached to the package frame outside the protective member. Related RF power device packages and fabrication methods are also discussed.

公开(公告)号：US20220084950A1

公开(公告)日：2022-03-17

申请号：US17018721

申请日：2020-09-11

Applicant: Cree, Inc.

Inventor： Basim Noori ,  Marvin Marbell ,  Scott Sheppard ,  Kwangmo Chris Lim ,  Alexander Komposch ,  Qianli Mu

IPC: H01L23/538 ,  H01L25/16 ,  H01L23/00 ,  H01L23/498 ,  H01L25/00 ,  H01L23/66

Abstract: RF transistor amplifiers an RF transistor amplifier die having a semiconductor layer structure, an interconnect structure having first and second opposing sides, wherein the first side of the interconnect structure is adjacent a surface of the RF transistor amplifier die such that the interconnect structure and the RF transistor amplifier die are in a stacked arrangement, and one or more circuit elements on the first and/or second side of the interconnect structure.

公开(公告)号：US20210408976A1

公开(公告)日：2021-12-30

申请号：US16911757

申请日：2020-06-25

Applicant: Cree, Inc.

Inventor： Kwangmo Chris Lim ,  Basim Noori ,  Qianli Mu ,  Marvin Marbell ,  Scott Sheppard ,  Alexander Komposch

IPC: H03F3/19 ,  H03F1/02 ,  H03F1/56 ,  H01L23/047 ,  H01L23/367 ,  H01L23/66 ,  H01L23/00 ,  H01L25/16

Abstract: RF transistor amplifiers include an RF transistor amplifier die having a Group III nitride-based semiconductor layer structure and a plurality of gate terminals, a plurality of drain terminals, and at least one source terminal that are each on an upper surface of the semiconductor layer structure, an interconnect structure on an upper surface of the RF transistor amplifier die, and a coupling element between the RF transistor amplifier die and the interconnect structure that electrically connects the gate terminals, the drain terminals and the source terminal to the interconnect structure.

公开(公告)号：US20210399692A1

公开(公告)日：2021-12-23

申请号：US16903771

申请日：2020-06-17

Applicant: Cree, Inc.

Inventor： Madhu Chidurala ,  Marvin Marbell ,  Niklas Thulin

IPC: H03F1/56 ,  H03F1/02 ,  H03F3/195 ,  H03F3/24

Abstract: An electronic package houses one or more RF amplifier circuits. At least one of an input or output impedance matching network integrated on the package and electrically coupled to the gate or drain bias voltage connection, respectively, of an amplifier circuit, includes a multi-stage decoupling network. Each multi-stage decoupling network includes two or more decoupling stages. Each decoupling stage of the multi-stage decoupling network includes a resistance, inductance, and capacitance, and is configured to reduce impedance seen by the amplifier circuit at a different frequency below an operating band of the amplifier circuit. Bias voltage connections to the impedance matching circuits may be shared, and may be connected anywhere along the multi-stage decoupling network.

公开(公告)号：US11837559B2

公开(公告)日：2023-12-05

申请号：US17211281

申请日：2021-03-24

Applicant: Cree, Inc.

Inventor： Michael E. Watts ,  Mario Bokatius ,  Jangheon Kim ,  Basim Noori ,  Qianli Mu ,  Kwangmo Chris Lim ,  Marvin Marbell

IPC: H01L23/66 ,  H01L23/00 ,  H01L29/20 ,  H01L29/417 ,  H01L29/778

CPC classification number: H01L23/66 ,  H01L24/49 ,  H01L29/2003 ,  H01L29/41775 ,  H01L29/7786 ,  H01L2223/6611 ,  H01L2223/6616 ,  H01L2223/6655 ,  H01L2223/6683 ,  H01L2224/49107 ,  H01L2924/13064 ,  H01L2924/1421 ,  H01L2924/30111

Abstract: RF amplifiers are provided that include an interconnection structure and a Group III nitride-based RF amplifier die that is mounted on top of the interconnection structure. The Group III nitride-based RF amplifier die includes a semiconductor layer structure. A plurality of unit cell transistors are provided in an upper portion of the semiconductor layer structure, and a gate terminal, a drain terminal and a source terminal are provided on a lower surface of the semiconductor layer structure that is adjacent the interconnection structure.