公开(公告)号：US20210210444A1

公开(公告)日：2021-07-08

申请号：US16737188

申请日：2020-01-08

Applicant: Cree, Inc.

Inventor： Simon Ward ,  Richard Wilson ,  Alexander Komposch

IPC: H01L23/66 ,  H03F1/56 ,  H01L23/00 ,  H03F3/195 ,  H05K1/02

Abstract: RF amplifiers are provided that include a submount such as a thermally conductive flange. A dielectric substrate is mounted on an upper surface of the submount, the dielectric substrate having a first outer sidewall, a second outer sidewall that is opposite and substantially parallel to the first outer sidewall, and an interior opening. An RF amplifier die is mounted on the submount within the interior opening of the dielectric substrate, where a longitudinal axis of the RF amplifier die defines a first axis. The RF amplifier die is positioned so that a first angle defined by the intersection of the first axis with the first outer sidewall is between 5° and 45°. The dielectric substrate may be a ceramic substrate or a dielectric layer of a printed circuit board.

公开(公告)号：US20210408978A1

公开(公告)日：2021-12-30

申请号：US16910900

申请日：2020-06-24

Applicant: Cree, Inc.

Inventor： Madhu Chidurala ,  Richard Wilson ,  Haedong Jang ,  Simon Ward

IPC: H03F3/195 ,  H03F1/56 ,  H01L23/047 ,  H01L23/367 ,  H01L23/66 ,  H01L23/00 ,  H01L25/16

Abstract: A packaged radio frequency transistor amplifier includes a package housing, an RF transistor amplifier die that is mounted within the package housing, a first capacitor die that is mounted within the package housing, an input leadframe that extends through the package housing to electrically connect to a gate terminal of the RF transistor amplifier die, and an output leadframe that extends through the package housing to electrically connect to a drain terminal of the RF transistor amplifier die. The output leadframe includes an output pad region, an output lead that extends outside of the package housing, and a first arm that extends from one of the output pad region and the output lead to be adjacent the first capacitor die.

公开(公告)号：US20210280478A1

公开(公告)日：2021-09-09

申请号：US16811161

申请日：2020-03-06

Applicant: Cree, Inc.

Inventor： Richard Wilson ,  Haedong Jang ,  Simon Ward ,  Madhu Chidurala

IPC: H01L23/043 ,  H01L23/495 ,  H01L21/48

Abstract: A radio frequency (RF) package includes a support having a semiconductor die attach region; a frame that includes an electrically insulative member having a lower side attached to the support and an upper side opposite the support; the frame includes an opening at least partially registered with said semiconductor die attach region; and the frame includes an upper metallization at the upper side of the electrically insulative member and a lower metallization The frame includes first electrically conductive edge connection connecting the first metallization to the first lower metallization.

公开(公告)号：US11257740B2

公开(公告)日：2022-02-22

申请号：US16797290

申请日：2020-02-21

Applicant: Cree, Inc.

Inventor： Alexander Komposch ,  Simon Ward ,  Madhu Chidurala

IPC: H01L23/498 ,  H01L23/66

Abstract: A device includes: a surface mount device carrier configured to be mounted to a metal submount of a transistor package, said surface mount device carrier includes an insulating substrate includes a top surface and a bottom surface and a first pad and a second pad arranged on a top surface of said surface mount device carrier; at least one surface mount device includes a first terminal and a second terminal, said first terminal of said surface mount device mounted to said first pad and said second terminal mounted to said second pad; and at least one of the first terminal and the second terminal being configured to be isolated from the metal submount by said insulating substrate, where at least one of the first pad and the second pad are configured as wire bond pads.

公开(公告)号：US11031913B2

公开(公告)日：2021-06-08

申请号：US16414955

申请日：2019-05-17

Applicant: Cree, Inc.

Inventor： Madhu Chidurala ,  Marvin Marbell ,  Simon Ward

IPC: H03F1/10 ,  H03F1/02 ,  H03F1/56 ,  H03F3/213

Abstract: In integrating RF power amplifier circuits on a package, at least one bias voltage is coupled to at least one amplifier circuit on the package via two or more pins/connectors. In particular, at least one of a gate and drain bias voltage is coupled to one or more amplifier circuits via at least two pins/connectors. In some embodiments, the two or more bias voltage pins/connectors are connected together on the package, placing the pins/connectors in parallel, which reduces an inductance associated with the pins/connectors. In some embodiments, at least of the two pins/connectors connected to the same bias voltage are disposed on either side of an RF signal pin/conductor, simplifying the routing of signals on the package, affording greater flexibility of placement and routing on the package.

公开(公告)号：US12224217B2

公开(公告)日：2025-02-11

申请号：US16811161

申请日：2020-03-06

Applicant: Cree, Inc.

Inventor： Richard Wilson ,  Haedong Jang ,  Simon Ward ,  Madhu Chidurala

IPC: H01L23/043 ,  H01L21/48 ,  H01L23/495

Abstract: A radio frequency (RF) package includes a support having a semiconductor die attach region; a frame that includes an electrically insulative member having a lower side attached to the support and an upper side opposite the support; the frame includes an opening at least partially registered with said semiconductor die attach region; and the frame includes an upper metallization at the upper side of the electrically insulative member and a lower metallization The frame includes first electrically conductive edge connection connecting the first metallization to the first lower metallization.

公开(公告)号：US20210265249A1

公开(公告)日：2021-08-26

申请号：US16797290

申请日：2020-02-21

Applicant: Cree, Inc.

Inventor： Alexander Komposch ,  Simon Ward ,  Madhu Chidurala

IPC: H01L23/498 ,  H01L23/66

Abstract: A device includes: a surface mount device carrier configured to be mounted to a metal submount of a transistor package, said surface mount device carrier includes an insulating substrate includes a top surface and a bottom surface and a first pad and a second pad arranged on a top surface of said surface mount device carrier; at least one surface mount device includes a first terminal and a second terminal, said first terminal of said surface mount device mounted to said first pad and said second terminal mounted to said second pad; and at least one of the first terminal and the second terminal being configured to be isolated from the metal submount by said insulating substrate, where at least one of the first pad and the second pad are configured as wire bond pads.