Method for screening risk quality semiconductor products
    11.
    发明申请
    Method for screening risk quality semiconductor products 审中-公开
    筛选风险品质半导体产品的方法

    公开(公告)号:US20070016321A1

    公开(公告)日:2007-01-18

    申请号:US11485477

    申请日:2006-07-12

    申请人: Dieter Rathei

    发明人: Dieter Rathei

    IPC分类号: G06F19/00

    CPC分类号: G01R31/2894

    摘要: Method of forming a quality passing set of semiconductor products. A parameter is tested in a plurality of semiconductor products. A specification passing set of semiconductor products is formed from semiconductor products in the plurality of semiconductor products. The specification passing set of semiconductor products have a parameter value of the parameter within a specification range. An upper and a lower percentile value are calculated. A weighted benchmark step distance is calculated. The calculation of the weighted benchmark step distance includes dividing a bulk distribution range distance by a bulk distribution population size to calculate a benchmark step distance. The weighted benchmark step distance is the product of the benchmark step distance and a step weighting number. A lower bound of the specification passing set of parameter values is screened. An upper bound of the specification passing set of parameter values is also screened.

    摘要翻译: 形成半导体产品质量通过的方法。 在多个半导体产品中测试参数。 半导体产品的规格通过集合由多个半导体产品中的半导体产品形成。 规格通过的半导体产品集合具有在规格范围内的参数的参数值。 计算上下百分比值。 计算加权基准步距。 加权基准步距的计算包括将体积分布范围距离除以体积分布群体大小以计算基准步距。 加权基准步距是基准步距和步加权数的乘积。 过滤参数值集合的下限被屏蔽。 也屏蔽了规范通过参数值集合的上限。

    Method of monitoring a semiconductor manufacturing trend
    12.
    发明申请
    Method of monitoring a semiconductor manufacturing trend 有权
    监控半导体制造趋势的方法

    公开(公告)号:US20070013399A1

    公开(公告)日:2007-01-18

    申请号:US11345154

    申请日:2006-02-01

    申请人: Dieter Rathei

    发明人: Dieter Rathei

    IPC分类号: G01R31/26

    摘要: A parametric parameter is selected, which has an upper specification limit and a lower specification limit. A storage percentile is determined. The storage percentile is equal to a product yield percentage if the number of the set of measurements greater than the upper specification limit exceeds the number of the set of measurements lower than the lower specification limit, and is equal to the product yield percentage subtracted from one hundred percent if the number of the set of measurements less than the lower specification limit exceeds the number of the set of measurements greater than the upper specification limit. A number of spatial regions on the wafer is designated. A first group of measurements from the set of measurements is obtained for a first spatial region of the spatial regions. A measurement closest to the storage percentile is stored.

    摘要翻译: 选择参数参数,其具有较高的规格限制和较低的规格限制。 确定存储百分位数。 如果大于上限规格限值的测量值的数量超过比较低规格限值低的测量值的数量,则存储百分位数等于产品产量百分比,并且等于从一个 百分之百,如果小于较低规格限值的测量值的数量超过大于上限规格的测量值的数量。 指定晶片上的多个空间区域。 对于空间区域的第一空间区域获得来自该组测量的第一组测量。 存储最接近存储百分位数的测量。

    System and method for determining yield impact for semiconductor devices
    13.
    发明授权
    System and method for determining yield impact for semiconductor devices 有权
    用于确定半导体器件的产量影响的系统和方法

    公开(公告)号:US06367040B1

    公开(公告)日:2002-04-02

    申请号:US09228178

    申请日:1999-01-11

    IPC分类号: G01R3128

    CPC分类号: H01L22/20

    摘要: A method for determining yield impact of process steps for semiconductor wafers having a plurality of dies includes the steps of correlating defects on the dies to electrical failures on the dies to determine hits on the dies, computing kill rates for the dies based on hits for each inspection process, determining a number of dies to be killed by considering kill rates for the dies with hits to weight the defects of each die and determining a yield loss for each inspection process based on the number of dies to be killed and a total number of dies on the semiconductor wafer. A system is also included.

    摘要翻译: 用于确定具有多个管芯的半导体晶片的工艺步骤的产量影响的方法包括以下步骤:将管芯上的缺陷与管芯上的电气故障相关联以确定管芯上的击打,基于每个管芯的击打来计算管芯的死亡率 检查过程,通过考虑死亡率的死亡率来确定要死亡的死亡数量,以便对每个死亡的缺陷进行加权,并且基于待杀死的死亡人数和每个检测过程的总数确定每个检查过程的产量损失 在半导体晶片上死亡。 还包括一个系统。