摘要:
Method of forming a quality passing set of semiconductor products. A parameter is tested in a plurality of semiconductor products. A specification passing set of semiconductor products is formed from semiconductor products in the plurality of semiconductor products. The specification passing set of semiconductor products have a parameter value of the parameter within a specification range. An upper and a lower percentile value are calculated. A weighted benchmark step distance is calculated. The calculation of the weighted benchmark step distance includes dividing a bulk distribution range distance by a bulk distribution population size to calculate a benchmark step distance. The weighted benchmark step distance is the product of the benchmark step distance and a step weighting number. A lower bound of the specification passing set of parameter values is screened. An upper bound of the specification passing set of parameter values is also screened.
摘要:
A parametric parameter is selected, which has an upper specification limit and a lower specification limit. A storage percentile is determined. The storage percentile is equal to a product yield percentage if the number of the set of measurements greater than the upper specification limit exceeds the number of the set of measurements lower than the lower specification limit, and is equal to the product yield percentage subtracted from one hundred percent if the number of the set of measurements less than the lower specification limit exceeds the number of the set of measurements greater than the upper specification limit. A number of spatial regions on the wafer is designated. A first group of measurements from the set of measurements is obtained for a first spatial region of the spatial regions. A measurement closest to the storage percentile is stored.
摘要:
A method for determining yield impact of process steps for semiconductor wafers having a plurality of dies includes the steps of correlating defects on the dies to electrical failures on the dies to determine hits on the dies, computing kill rates for the dies based on hits for each inspection process, determining a number of dies to be killed by considering kill rates for the dies with hits to weight the defects of each die and determining a yield loss for each inspection process based on the number of dies to be killed and a total number of dies on the semiconductor wafer. A system is also included.