SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    11.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号:US20100001340A1

    公开(公告)日:2010-01-07

    申请号:US12492607

    申请日:2009-06-26

    IPC分类号: H01L29/78 H01L21/336

    摘要: A semiconductor device includes a step-type recess pattern formed in a substrate, a gate electrode buried in the recess pattern and having a gap disposed between the gate electrode and upper sidewalls of the recess pattern, an insulation layer filling the gap, and a source and drain region formed in a portion of the substrate at two sides of the recess pattern. The semiconductor device is able to secure a required data retention time by suppressing the increase of leakage current caused by the reduction of a design rule.

    摘要翻译: 半导体器件包括形成在衬底中的阶梯型凹槽图形,埋入凹槽图案中的栅电极,并且具有设置在凹槽图案的栅极电极和上侧壁之间的间隙,填充间隙的绝缘层和源极 以及在凹部图案的两侧形成在基板的一部分中的漏极区域。 半导体器件能够通过抑制由于设计规则的减少引起的漏电流的增加来确保所需的数据保持时间。