公开(公告)号：US20100095882A1

公开(公告)日：2010-04-22

申请号：US12580849

申请日：2009-10-16

申请人： Tadao Hashimoto ,  Masanori Ikari ,  Edward Letts

发明人： Tadao Hashimoto ,  Masanori Ikari ,  Edward Letts

IPC分类号： C30B7/10 ,  B01J3/04

CPC分类号： C30B7/105 ,  C30B7/10 ,  C30B29/403 ,  C30B29/406 ,  C30B35/002 ,  Y10T117/1096

摘要： The present disclosure proves for new design of reactors used for ammonothermal growth of III nitride crystals. The reactors include a region intermediate a source dissolution region and a crystal growth region configured to provide growth of high quality crystals at rates greater than 100 μm/day. In one embodiment, multiple baffle plates having openings whose location is designed so that there is no direct path through the intermediate region, or with multiple baffle plates having differently sized openings on each plate so that the flow is slowed down and/or exhibit greater mixing are described. The disclosed designs enables obtaining high temperature difference between the dissolution region and the crystallization region without decreasing conductance through the device.

摘要翻译： 本公开内容证明了用于III族氮化物晶体的氨热生长的反应器的新设计。 反应器包括源溶解区域和晶体生长区域之间的区域，晶体生长区域被配置为以大于100μm/天的速率提供高质量晶体的生长。 在一个实施例中，具有开口的多个挡板具有位置被设计成使得不存在通过中间区域的直接路径，或者在每个板上具有不同尺寸的开口的多个挡板，使得流动减慢和/或显示更大的混合 被描述。 所公开的设计使得能够在不降低通过该装置的电导的情况下获得溶解区域和结晶区域之间的高温差。

公开(公告)号：US20090315151A1

公开(公告)日：2009-12-24

申请号：US12456181

申请日：2009-06-12

申请人： Tadao Hashimoto ,  Masanori Ikari ,  Edward Letts

发明人： Tadao Hashimoto ,  Masanori Ikari ,  Edward Letts

IPC分类号： H01L29/20 ,  H01L21/66

CPC分类号： G01R31/2601 ,  C30B7/10 ,  C30B29/403 ,  H01L22/20 ,  H01L29/2003 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention discloses a new testing method of group III-nitride wafers. By utilizing the ammonothermal method, GaN or other Group III-nitride wafers can be obtained by slicing the bulk GaN ingots. Since these wafers originate from the same ingot, these wafers have similar properties/qualities. Therefore, properties of wafers sliced from an ingot can be estimated from measurement data obtained from selected number of wafers sliced from the same ingot or an ingot before slicing. These estimated properties can be used for product certificate of untested wafers. This scheme can reduce a significant amount of time, labor and cost related to quality control.

摘要翻译： 本发明公开了III族氮化物晶片的新试验方法。 通过利用氨热法，可以通过将本体GaN锭切片来获得GaN或其它III族氮化物晶片。 由于这些晶片来自相同的晶锭，所以这些晶片具有相似的特性/质量。 因此，可以从在切片前从相同的锭或锭切片的所选数量的晶片获得的测量数据估计从晶锭切片的晶片的性质。 这些估计属性可用于未经测试的晶片的产品证书。 该方案可以减少与质量控制相关的大量时间，劳动力和成本。

公开(公告)号：US08764903B2

公开(公告)日：2014-07-01

申请号：US12774677

申请日：2010-05-05

申请人： Tadao Hashimoto ,  Edward Letts

发明人： Tadao Hashimoto ,  Edward Letts

IPC分类号： C23C16/00

CPC分类号： C30B25/08 ,  C23C16/4412 ,  C30B25/10 ,  C30B25/14 ,  C30B29/403 ,  C30B29/406

摘要： The present invention in one preferred embodiment discloses a new design of HVPE reactor, which can grow gallium nitride for more than one day without interruption. To avoid clogging in the exhaust system, a second reactor chamber is added after a main reactor where GaN is produced. The second reactor chamber may be configured to enhance ammonium chloride formation, and the powder may be collected efficiently in it. To avoid ammonium chloride formation in the main reactor, the connection between the main reactor and the second reaction chamber can be maintained at elevated temperature. In addition, the second reactor chamber may have two or more exhaust lines. If one exhaust line becomes clogged with powder, the valve for an alternative exhaust line may open and the valve for the clogged line may be closed to avoid overpressuring the system. The quartz-made main reactor may have e.g. a pyrolytic boron nitride liner to collect polycrystalline gallium nitride efficiently. The new HYPE reactor which can grow gallium nitride crystals for more than 1 day may produce enough source material for ammonothermal growth. Single crystalline gallium nitride and polycrystalline gallium nitride from the HYPE reactor may be used as seed crystals and a nutrient for ammonothermal group III-nitride growth.

摘要翻译： 在一个优选实施方案中，本发明公开了HVPE反应器的新设计，其可以不间断地长时间地生长氮化镓一天以上。 为了避免在排气系统中堵塞，在生产GaN的主反应器之后加入第二反应器室。 第二反应器室可以被配置成增强氯化铵的形成，并且可以有效地将粉末收集在其中。 为了避免在主反应器中形成氯化铵，可以将主反应器和第二反应室之间的连接保持在升高的温度。 此外，第二反应器室可以具有两个或更多个排气管线。 如果一个排气管道被粉末堵塞，则替代排气管路的阀门可能会打开，堵塞管路的阀门可能会被关闭，以避免系统过压。 石英制的主反应器可以具有例如 一种热解氮化硼衬垫，有效收集多晶氮化镓。 可以生长氮化镓晶体超过1天的新HYPE反应器可以产生足够的用于氨热生长的源材料。 可以使用来自HYPE反应器的单晶氮化镓和多晶氮化镓作为晶种和用于氨热III族氮化物生长的营养物质。

公开(公告)号：US20100285657A1

公开(公告)日：2010-11-11

申请号：US12774677

申请日：2010-05-05

申请人： Tadao HASHIMOTO ,  Edward Letts

发明人： Tadao HASHIMOTO ,  Edward Letts

IPC分类号： H01L21/203

CPC分类号： C30B25/08 ,  C23C16/4412 ,  C30B25/10 ,  C30B25/14 ,  C30B29/403 ,  C30B29/406

摘要： The present invention in one preferred embodiment discloses a new design of HVPE reactor, which can grow gallium nitride for more than one day without interruption. To avoid clogging in the exhaust system, a second reactor chamber is added after a main reactor where GaN is produced. The second reactor chamber may be configured to enhance ammonium chloride formation, and the powder may be collected efficiently in it. To avoid ammonium chloride formation in the main reactor, the connection between the main reactor and the second reaction chamber can be maintained at elevated temperature. In addition, the second reactor chamber may have two or more exhaust lines. If one exhaust line becomes clogged with powder, the valve for an alternative exhaust line may open and the valve for the clogged line may be closed to avoid overpressuring the system. The quartz-made main reactor may have e.g. a pyrolytic boron nitride liner to collect polycrystalline gallium nitride efficiently. The new HYPE reactor which can grow gallium nitride crystals for more than 1 day may produce enough source material for ammonothermal growth. Single crystalline gallium nitride and polycrystalline gallium nitride from the HYPE reactor may be used as seed crystals and a nutrient for ammonothermal group III-nitride growth.

摘要翻译： 在一个优选实施方案中，本发明公开了HVPE反应器的新设计，其可以不间断地生长氮化镓一天以上。 为了避免在排气系统中堵塞，在生产GaN的主反应器之后加入第二反应器室。 第二反应器室可以被配置成增强氯化铵的形成，并且可以有效地将粉末收集在其中。 为了避免在主反应器中形成氯化铵，可以将主反应器和第二反应室之间的连接保持在升高的温度。 此外，第二反应器室可以具有两个或更多个排气管线。 如果一个排气管道被粉末堵塞，则替代排气管路的阀门可能会打开，堵塞管路的阀门可能会被关闭，以避免系统过压。 石英制的主反应器可以具有例如 一种热解氮化硼衬垫，有效收集多晶氮化镓。 可以生长氮化镓晶体超过1天的新HYPE反应器可以产生足够的用于氨热生长的源材料。 可以使用来自HYPE反应器的单晶氮化镓和多晶氮化镓作为晶种和用于氨热III族氮化物生长的营养物质。