摘要:
The present invention provides a method of forming a semiconducting substrate including the steps of providing an initial structure having first device region comprising a first orientation material and a second device region having a second orientation material; forming a first concentration of lattice modifying material atop the first orientation material; forming a second concentration of the lattice modifying material atop the second orientation material; intermixing the first concentration of lattice modifying material with the first orientation material to produce a first lattice dimension surface and the second concentration of lattice modifying material the second orientation material to produce a second lattice dimension surface; and forming a first strained semiconducting layer atop the first lattice dimension surface and a second strained semiconducting layer atop the second lattice dimension surface.
摘要:
An apparatus and method for controlling the net doping in the active region of a semiconductor device in accordance with a gate length. The method includes doping a short channel device and a long channel device with a first dopant, and doping the short channel device and the long channel device with a second dopant at a same implantation energy, dose, and angle for both the short channel device and the long channel device. The second dopant neutralizes the first dopant in portion to a gate length of the short channel device and the second channel device.
摘要:
The present invention provides a method of forming a semiconducting substrate including the steps of providing an initial structure having first device region comprising a first orientation material and a second device region having a second orientation material; forming a first concentration of lattice modifying material atop the first orientation material; forming a second concentration of the lattice modifying material atop the second orientation material; intermixing the first concentration of lattice modifying material with the first orientation material to produce a first lattice dimension surface and the second concentration of lattice modifying material the second orientation material to produce a second lattice dimension surface; and forming a first strained semiconducting layer atop the first lattice dimension surface and a second strained semiconducting layer atop the second lattice dimension surface.
摘要:
A structure and associated method for annealing a trapped charge from a semiconductor device. The semiconductor structure comprises a substrate and a first heating element. The substrate comprises a bulk layer, an insulator layer and a device layer. The first heating element is formed within the bulk layer. A first side of the first heating element is adjacent to a first portion of the insulator layer. The first heating element is adapted to be selectively activated to generate thermal energy to heat the first portion of the insulator layer and anneal a trapped electrical charge from the first portion of the insulator layer.