公开(公告)号：US20230231404A1

公开(公告)日：2023-07-20

申请号：US18153155

申请日：2023-01-11

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Dong Yun JUNG ,  Kun Sik PARK ,  JONG IL WON ,  Hyun-Gyu JANG ,  Doohyung CHO ,  Jong-Won LIM

IPC: H02J7/00

CPC classification number: H02J7/007182 ,  H02J7/0047 ,  H02J7/00711 ,  H02J7/00714 ,  H02J2207/20

Abstract: There is provided a battery system including: a controller; a main switch controlled by the controller to supply or cut off a voltage of a battery to a load; and a semiconductor pre-charger module including a semiconductor switch connected in parallel with the main switch and configured to supply or cut off the voltage of the battery to the load according to a control signal output from the controller, and a semiconductor switch driver configured to receive the control signal from the controller and output a single pulse signal for driving the semiconductor switch to turn on and off the semiconductor switch. Here, the semiconductor switch driver of the semiconductor pre-charger module includes an isolation element configured to electrically isolate the controller and the battery voltage, and the semiconductor switch of the semiconductor pre-charger module is a MOS-controlled thyristor (MCT).

公开(公告)号：US20220299554A1

公开(公告)日：2022-09-22

申请号：US17510856

申请日：2021-10-26

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Dong Yun JUNG ,  Hyun Gyu JANG ,  Kun Sik PARK ,  JONG IL WON ,  Sung Kyu KWON ,  Jong Won LIM ,  Doo Hyung CHO

IPC: G01R31/00

Abstract: The apparatus for ESD test includes a micro-controller unit client, a low voltage supply configured to output a low voltage on the basis of control by the micro-controller unit, a high voltage supply configured to output a high voltage on the basis of control by the micro-controller unit, and an ESD generator configured to generate an ESD voltage for an ESD test of a device under test (DUT) by using the low voltage and the high voltage, on the basis of control by the micro-controller unit. The ESD generator is a semiconductor integrated circuit module where a charging semiconductor switch, a discharging semiconductor switch, a switch driving block controlling a switching operation of each of the charging semiconductor switch and the discharging semiconductor switch, and a plurality of passive elements connected to the charging semiconductor switch and the discharging semiconductor switch are implemented as package, for generating the ESD voltage.

公开(公告)号：US20170213904A1

公开(公告)日：2017-07-27

申请号：US15414156

申请日：2017-01-24

Applicant: Electronics and Telecommunications Research Institute

Inventor： Jeho NA ,  Hyung Seok LEE ,  Chi Hoon JUN ,  Sang Choon KO ,  Myungjoon KWACK ,  Young Rak PARK ,  Woojin CHANG ,  Hyun-Gyu JANG ,  Dong Yun JUNG

IPC: H01L29/778 ,  H01L29/205 ,  H01L29/66 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/20 ,  H01L23/31

CPC classification number: H01L29/7787 ,  H01L23/315 ,  H01L23/3171 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41758 ,  H01L29/42364 ,  H01L29/42372 ,  H01L29/66462 ,  H01L29/7786

Abstract: A semiconductor device includes a semiconductor structure including a substrate, a first semiconductor layer on the substrate, and a second semiconductor layer on the first semiconductor layer, a first passivation pattern provided on the semiconductor structure, and first and second conductive patterns provided on the semiconductor structure and spaced from the first passivation pattern.

公开(公告)号：US20170077282A1

公开(公告)日：2017-03-16

申请号：US15265647

申请日：2016-09-14

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Hyung Seok LEE ,  Ki Hwan KIM ,  Sang Choon KO ,  Zin-Sig KIM ,  Jeho NA ,  EUN SOO NAM ,  Young Rak PARK ,  Junbo PARK ,  Chi Hoon JUN ,  Dong Yun JUNG

IPC: H01L29/778 ,  H01L29/205 ,  H01L29/20 ,  H01L29/40 ,  H01L29/423

CPC classification number: H01L29/402 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/66462 ,  H01L29/7786

Abstract: Provided is an electronic device. The electronic device includes a first semiconductor layer and a second semiconductor layer sequentially stacked on a substrate and a source electrode, a gate electrode, and a drain electrode arranged on the second semiconductor layer. The electronic device further includes a field plate which is electrically connected to the source electrode and extends towards the drain electrode, wherein the field plate becomes farther away from the substrate as the field plate becomes closer to the drain electrode.

Abstract translation: 提供一种电子设备。 该电子器件包括依次堆叠在基板上的第一半导体层和第二半导体层以及设置在第二半导体层上的源电极，栅电极和漏电极。 电子装置还包括电场连接到源极并且朝向漏电极延伸的场板，其中当场板越靠近漏电极时，场板越靠近衬底。

公开(公告)号：US20160260653A1

公开(公告)日：2016-09-08

申请号：US14872868

申请日：2015-10-01

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Chi Hoon JUN ,  Jeho NA ,  Dong Yun JUNG ,  Sang Choon KO ,  Eun Soo NAM ,  Hyung Seok LEE

IPC: H01L23/467

CPC classification number: H01L23/467

Abstract: Provided is a semiconductor device. The semiconductor device includes a substrate including a cantilever configured to generate a flow of cooling media through dynamic movement, an active area on the substrate which an electronic device is provided on, an insulation layer disposed to be spaced apart from the active area on the substrate, a lower electrode on the insulation layer, a piezoelectric film on the lower electrode, and an upper electrode on the piezoelectric film.

Abstract translation: 提供一种半导体器件。 该半导体器件包括：基板，其包括悬臂，该悬臂构造成通过动态移动产生冷却介质流;基板上的有源区域，设置有电子器件;绝缘层，设置成与基板上的有源区间隔开; 绝缘层上的下电极，下电极上的压电薄膜和压电薄膜上的上电极。