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公开(公告)号：US20170062385A1
公开(公告)日：2017-03-02
申请号：US15221089
申请日：2016-07-27
发明人： Dong Yun JUNG , Sang Choon KO , Chi Hoon JUN , Minki KIM , Jeho NA , EUN SOO NAM , Young Rak PARK , Junbo PARK , Hyun Soo LEE , Hyung Seok LEE , Hyun-Gyu JANG
IPC分类号： H01L25/065 , H01L29/78 , H01L23/522 , H01L23/528 , H02M3/158 , H01L23/373
CPC分类号： H01L25/0652 , H01L23/367 , H01L23/3736 , H01L23/4012 , H01L23/49822 , H01L23/50 , H01L23/5226 , H01L23/528 , H01L25/072 , H01L29/78 , H02M3/156
摘要： Disclosed is a power converting device including: a first laminate having a plurality of non-magnetic substrates which are laminated; electronic devices disposed on at least one of the non-magnetic substrates; first conductive patterns disposed on the non-magnetic substrate on which the electronic devices are disposed, the first conductive patterns being connected to the electronic devices; at least one via electrode connecting the respective first conductive patterns to each other; a second laminate disposed on one side of the first laminate and having a plurality of magnetic sheets which are laminated; second conductive patterns disposed on at least two magnetic sheets among the plurality of magnetic sheets; and at least one via electrode connecting the respective second conductive patterns to each other, wherein the first and second via electrodes are connected to each other.
摘要翻译： 公开了一种电力转换装置，包括：第一层压体，其具有层叠的多个非磁性基板; 设置在所述非磁性基板中的至少一个上的电子设备; 布置在其上设置有电子设备的非磁性基板上的第一导电图案，第一导电图案连接到电子设备; 将相应的第一导电图案彼此连接的至少一个通孔电极; 第二层压体，其设置在所述第一层叠体的一侧，并且具有层叠的多个磁性片; 设置在所述多个磁性片中的至少两个磁性片上的第二导电图案; 以及将各个第二导电图案彼此连接的至少一个通孔电极，其中所述第一和第二通孔电极彼此连接。
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公开(公告)号：US20160380119A1
公开(公告)日：2016-12-29
申请号：US15084874
申请日：2016-03-30
发明人： Dong Yun JUNG , Hyun Soo LEE , Sang Choon KO , Jeong-Jin KIM , Zin-Sig KIM , Jeho NA , Eun Soo NAM , Jae Kyoung MUN , Young Rak PARK , Sung-Bum BAE , Hyung Seok LEE , Woojin CHANG , Hyungyu JANG , Chi Hoon JUN
IPC分类号： H01L29/872 , H01L29/205 , H01L29/45 , H01L21/02 , H01L23/29 , H01L29/47 , H01L29/66 , H01L21/306 , H01L29/20 , H01L23/31
CPC分类号： H01L21/0228 , H01L23/291 , H01L23/3178 , H01L29/2003 , H01L29/205 , H01L29/66212 , H01L29/872
摘要： A first nitride semiconductor layer of a semiconductor device is provided on a substrate, a second nitride semiconductor layer is provided on the first nitride semiconductor layer, a first ohmic metal and a second ohmic metal are provided on the second nitride semiconductor layer, a recess region is provided in the second nitride semiconductor layer between the first ohmic metal and the second ohmic metal, a passivation layer covers side of the first ohmic metal and a bottom surface and sides of the recess region, and a Schottky electrode is provided on the first ohmic metal and extends into the recess region.
摘要翻译： 半导体器件的第一氮化物半导体层设置在衬底上，第二氮化物半导体层设置在第一氮化物半导体层上，第一欧姆金属和第二欧姆金属设置在第二氮化物半导体层上，凹部 在所述第一欧姆金属和所述第二欧姆金属之间的所述第二氮化物半导体层中设置钝化层，所述钝化层覆盖所述第一欧姆金属的一侧，并且所述钝化层覆盖所述凹部区域的底表面和所述侧面，并且所述第一欧姆金属的肖特基电极 金属并延伸到凹陷区域中。
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公开(公告)号：US20170141704A1
公开(公告)日：2017-05-18
申请号：US15299519
申请日：2016-10-21
发明人： Chi Hoon JUN , Sang Choon KO , Minki KIM , Jeho NA , Young Rak PARK , Junbo PARK , Hyun Soo LEE , Hyung Seok LEE , Hyun-Gyu JANG , Dong Yun JUNG
IPC分类号： H02N2/18 , H01L41/113 , H01L29/872 , H01L29/84 , H01L29/20 , H01L29/205
CPC分类号： H02N2/186 , H01L27/20 , H01L29/2003 , H01L29/205 , H01L29/84 , H01L29/872 , H01L41/1136
摘要： Provided is a hybrid diode device. The hybrid diode device includes a first lower nitride layer disposed on a substrate and including a first 2-dimensional electron gas (2DEG) layer, a second lower nitride layer extending from the first lower nitride layer to the outside of the substrate and including a second 2DEG layer, a first upper nitride layer disposed on the first lower nitride layer, a second upper nitride layer disposed on the second lower nitride layer, a first cap layer disposed on the first upper nitride layer, a second cap layer disposed on the second upper nitride layer, a first electrode structure connected to the first lower nitride layer and the first cap layer; and a second electrode structure connected to the second lower nitride layer and the first electrode structure. The second lower nitride layer generates electric energy through dynamic movement.
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公开(公告)号：US20160225631A1
公开(公告)日：2016-08-04
申请号：US15093814
申请日：2016-04-08
发明人： Chi Hoon JUN , Sang Choon KO , Seok-Hwan MOON , Woojin CHANG , Sung-Bum BAE , Young Rak PARK , Je Ho NA , Jae Kyoung MUN , Eun Soo NAM
IPC分类号： H01L21/3065 , H01L21/308 , H01L21/3205 , H01L23/367
CPC分类号： H01L21/3065 , H01L21/3081 , H01L21/32051 , H01L23/367 , H01L23/467 , H01L23/473 , H01L2924/0002 , H01L2924/00
摘要： Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes: an active region provided on a substrate; an inlet channel formed as a single cavity buried in one side of the substrate; an outlet channel formed as a single cavity buried in the other side of the substrate; a micro channel array comprising a plurality of micro channels, wherein the plurality of micro channels are formed as a plurality of cavities buried in the substrate, and one end of the micro channel array is connected to a side of the inlet channel and the other end of the micro channel array is connected to a side of the outlet channel; and a micro heat sink array separating the micro channels from one another.
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公开(公告)号：US20150187599A1
公开(公告)日：2015-07-02
申请号：US14310784
申请日：2014-06-20
发明人： Sang Choon KO , Jae Kyoung MUN , Woojin CHANG , Sung-Bum BAE , Young Rak PARK , Chi Hoon JUN , Seok-Hwan MOON , Woo-Young JANG , Jeong-Jin KIM , Hyungyu JANG , Je Ho NA , Eun Soo NAM
IPC分类号： H01L21/321 , H01L21/283 , H01L21/02
CPC分类号： H01L21/3212 , H01L21/0254 , H01L21/283 , H01L21/28575 , H01L21/28581 , H01L29/2003 , H01L29/41766 , H01L29/452 , H01L29/66462 , H01L29/7786
摘要： Provided is a method of manufacturing a nitride semiconductor device. The method includes forming a plurality of electrodes on a growth substrate on which first and second nitride semiconductor layers are sequentially stacked, forming upper metal layers on the plurality of electrodes respectively, removing the growth substrate to expose a lower surface of the first nitride semiconductor layer, and forming a third nitride semiconductor layer and a lower metal layer sequentially on the exposed lower surface of the first nitride semiconductor layer.
摘要翻译： 提供一种制造氮化物半导体器件的方法。 该方法包括在生长衬底上形成多个电极，在其上依次层叠有第一和第二氮化物半导体层，分别在多个电极上形成上部金属层，去除生长衬底以暴露第一氮化物半导体层的下表面 并且在第一氮化物半导体层的暴露的下表面上顺序地形成第三氮化物半导体层和下金属层。
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公开(公告)号：US20170213904A1
公开(公告)日：2017-07-27
申请号：US15414156
申请日：2017-01-24
发明人： Jeho NA , Hyung Seok LEE , Chi Hoon JUN , Sang Choon KO , Myungjoon KWACK , Young Rak PARK , Woojin CHANG , Hyun-Gyu JANG , Dong Yun JUNG
IPC分类号： H01L29/778 , H01L29/205 , H01L29/66 , H01L29/06 , H01L29/417 , H01L29/423 , H01L29/20 , H01L23/31
CPC分类号： H01L29/7787 , H01L23/315 , H01L23/3171 , H01L29/0649 , H01L29/0657 , H01L29/2003 , H01L29/205 , H01L29/41758 , H01L29/42364 , H01L29/42372 , H01L29/66462 , H01L29/7786
摘要： A semiconductor device includes a semiconductor structure including a substrate, a first semiconductor layer on the substrate, and a second semiconductor layer on the first semiconductor layer, a first passivation pattern provided on the semiconductor structure, and first and second conductive patterns provided on the semiconductor structure and spaced from the first passivation pattern.
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公开(公告)号：US20170077282A1
公开(公告)日：2017-03-16
申请号：US15265647
申请日：2016-09-14
发明人： Hyung Seok LEE , Ki Hwan KIM , Sang Choon KO , Zin-Sig KIM , Jeho NA , EUN SOO NAM , Young Rak PARK , Junbo PARK , Chi Hoon JUN , Dong Yun JUNG
IPC分类号： H01L29/778 , H01L29/205 , H01L29/20 , H01L29/40 , H01L29/423
CPC分类号： H01L29/402 , H01L29/2003 , H01L29/41766 , H01L29/4236 , H01L29/42376 , H01L29/66462 , H01L29/7786
摘要： Provided is an electronic device. The electronic device includes a first semiconductor layer and a second semiconductor layer sequentially stacked on a substrate and a source electrode, a gate electrode, and a drain electrode arranged on the second semiconductor layer. The electronic device further includes a field plate which is electrically connected to the source electrode and extends towards the drain electrode, wherein the field plate becomes farther away from the substrate as the field plate becomes closer to the drain electrode.
摘要翻译： 提供一种电子设备。 该电子器件包括依次堆叠在基板上的第一半导体层和第二半导体层以及设置在第二半导体层上的源电极，栅电极和漏电极。 电子装置还包括电场连接到源极并且朝向漏电极延伸的场板，其中当场板越靠近漏电极时，场板越靠近衬底。
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公开(公告)号：US20160260653A1
公开(公告)日：2016-09-08
申请号：US14872868
申请日：2015-10-01
发明人： Chi Hoon JUN , Jeho NA , Dong Yun JUNG , Sang Choon KO , Eun Soo NAM , Hyung Seok LEE
IPC分类号： H01L23/467
CPC分类号： H01L23/467
摘要： Provided is a semiconductor device. The semiconductor device includes a substrate including a cantilever configured to generate a flow of cooling media through dynamic movement, an active area on the substrate which an electronic device is provided on, an insulation layer disposed to be spaced apart from the active area on the substrate, a lower electrode on the insulation layer, a piezoelectric film on the lower electrode, and an upper electrode on the piezoelectric film.
摘要翻译： 提供一种半导体器件。 该半导体器件包括：基板，其包括悬臂，该悬臂构造成通过动态移动产生冷却介质流;基板上的有源区域，设置有电子器件;绝缘层，设置成与基板上的有源区间隔开; 绝缘层上的下电极，下电极上的压电薄膜和压电薄膜上的上电极。
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公开(公告)号：US20240072547A1
公开(公告)日：2024-02-29
申请号：US18364210
申请日：2023-08-02
发明人： Yil Suk YANG , Chi Hoon JUN
IPC分类号： H02J7/00
CPC分类号： H02J7/0019 , H02J7/0048
摘要： Disclosed is a battery balancing system, which includes a battery pack block including a first battery module and a second battery module arranged in a first row and a third battery module and a fourth battery module arranged in a second row, a balancing control block including first control circuits respectively connected to the first battery module and the second battery module in the first row and second control circuits respectively connected to the third battery module and the fourth battery module in the second row, a battery state determination block that receives output signals from the first control circuits and the second control circuits to determine states of the first to fourth battery modules, and a controller that applies a first row selection signal to the first control circuits and applies a second row selection signal to the second control circuits.
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公开(公告)号：US20170117889A1
公开(公告)日：2017-04-27
申请号：US15223826
申请日：2016-07-29
发明人： Minki KIM , Hyun-Gyu JANG , Dong Yun JUNG , Sang Choon KO , Hyun Soo LEE , Chi Hoon JUN
IPC分类号： H03K17/081 , H01L27/088 , H01L29/20 , H01L29/778
CPC分类号： H03K17/08104 , H01L27/0883 , H01L29/2003 , H01L29/41758 , H01L29/42316 , H01L29/778 , H01L29/7786 , H03K17/102 , H03K2017/6875
摘要： Provided is a stabilizing circuit structure using a sense field effect transistor (sense-FET). A power semiconductor module includes a depletion-mode field effect transistor (D-mode FET) and the sense FET that has same structure as the D-mode FET and varies in area. Also the power semiconductor module includes not only an enhancement-mode field effect transistor (E-mode FET), but also the stabilizing circuit including circuit elements such as a resistor, a capacitor, an inductor, or a diode.
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