公开(公告)号：US06890599B2

公开(公告)日：2005-05-10

申请号：US10461215

申请日：2003-06-13

申请人： Stephen L. Buchwalter ,  Gareth Geoffrey Hougham ,  Kang-Wook Lee ,  John J. Ritsko ,  Mary Elizabeth Rothwell ,  Peter M. Fryer

发明人： Stephen L. Buchwalter ,  Gareth Geoffrey Hougham ,  Kang-Wook Lee ,  John J. Ritsko ,  Mary Elizabeth Rothwell ,  Peter M. Fryer

IPC分类号： G02F1/1343 ,  B05D1/32 ,  B05D3/00 ,  B05D5/00

CPC分类号： B82Y30/00 ,  G02F1/13439 ,  Y10T428/31663

摘要： New etch barriers of indium-tin-oxide in the manufacturing process of thin film transistor-liquid crystal display are self-assembled monolayers, such as n-alkylsilanes. A typical process of applying a self-assembled monolayer is to ink a hydrolyzed n-octadecyltrimethoxysilane solution on to a stamp and then to transfer the solution onto ITO. The surface of the stamp may be polar enough to be wet with polar self-assembled monolayer solutions of an akylsilane. A non-polar stamp surface may be treated with oxygen plasma to obtain a wettable polar surface.

摘要翻译： 在薄膜晶体管 - 液晶显示器的制造过程中，铟锡氧化物的新的蚀刻屏障是自组装单层，例如正烷基硅烷。 施加自组装单层的典型方法是将水解的正十八烷基三甲氧基硅烷溶液油墨印刷到印模上，然后将溶液转移到ITO上。 印模的表面可以足够极性以使其与烷基硅烷的极性自组装单层溶液一起润湿。 可以用氧等离子体处理非极性印模表面以获得可润湿的极性表面。

公开(公告)号：US06791144B1

公开(公告)日：2004-09-14

申请号：US09604430

申请日：2000-06-27

申请人： Peter M. Fryer ,  Robert L. Wisnieff ,  Takatoshi Tsujimura

发明人： Peter M. Fryer ,  Robert L. Wisnieff ,  Takatoshi Tsujimura

IPC分类号： H01L2701

CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L27/1292 ,  H01L29/41733 ,  H01L29/66757 ,  H01L29/78609 ,  H01L29/78633 ,  H01L29/78666

摘要： The present invention is directed to a thin film transistor (and related multilayer structures) that includes: source and drain electrodes 14 and 15 disposed at a specified interval above an insulating substrate 11 and formed by printing-and-plating; an a-Si-film 16 disposed for the source and drain electrodes 14 and 15; a gate insulating film 17 laminated on the a-Si film 16; and a gate electrode 18 laminated on the gate insulating film 17 and formed by printing-and-plating. The a-Si film 16 and the gate insulating film 17 have an offset region 20 that uniformly extends beyond the dimensions of the gate electrode 18.

摘要翻译： 本发明涉及一种薄膜晶体管（及相关的多层结构），其包括：以绝缘基板11上方的特定间隔设置并通过印刷和电镀形成的源极和漏极14和15; 为源极和漏极14和15设置的a-Si膜16; 层叠在a-Si膜16上的栅极绝缘膜17; 以及层叠在栅极绝缘膜17上并通过印刷和电镀形成的栅电极18。 a-Si膜16和栅极绝缘膜17具有均匀地延伸超过栅电极18的尺寸的偏移区域20。

公开(公告)号：US5831283A

公开(公告)日：1998-11-03

申请号：US636106

申请日：1996-04-22

申请人： John Batey ,  Peter M. Fryer ,  Jun Hyung Souk

发明人： John Batey ,  Peter M. Fryer ,  Jun Hyung Souk

IPC分类号： G02F1/1362 ,  H01L21/26 ,  H01L21/28 ,  H01L21/314 ,  H01L21/318 ,  H01L21/336 ,  H01L21/469 ,  H01L29/00 ,  H01L29/49 ,  H01L29/04 ,  H01L31/036

CPC分类号： H01L29/66765 ,  H01L21/28008 ,  H01L21/3185 ,  H01L27/124 ,  H01L29/4908 ,  H01L29/6675 ,  G02F2001/136295

摘要： A layer for passivating copper, aluminum, or other refractory metal films using ammonia-free silicon nitride and structures produced by the method. A thin film transistor for use in a liquid crystal display, wherein the transistor has a gate, a source and a drain, and a gate insulator between the gate and an active silicon layer. The improvement is a layer of the ammonia-free silicon nitride deposited between the copper, aluminum, or other refractory metal gate and the gate insulator. Further, the gate is copper, aluminum, or another refractory metal and is deposited directly on the substrate. The layer of ammonia-free silicon nitride is also deposited on portions of the substrate adjacent the gate and the gate line extending therefrom. The structure provides stable and low-resistance electrical contact between copper, aluminum, or another refractory metal gate lines and a metallization layer of aluminum and/or molybdenum, includes using a conductive material, such as an indium tin oxide bridge. A metallization layer of the device is connected to the conductive material through a via hole extending to that portion of the conductive material which is not covered by the copper, aluminum, or another refractory metal.

摘要翻译： 使用无氨氮化硅钝化铜，铝或其他难熔金属膜的层，以及通过该方法制造的结构。 一种用于液晶显示器的薄膜晶体管，其中晶体管具有栅极，源极和漏极以及栅极和有源硅层之间的栅极绝缘体。 改进之处在于沉积在铜，铝或其它难熔金属栅极与栅绝缘体之间的无氨氮化硅层。 此外，栅极是铜，铝或另一种难熔金属，并直接沉积在基板上。 无氨氮化硅层也沉积在与栅极相邻的衬底的部分上以及从其延伸的栅极线上。 该结构在铜，铝或另一难熔金属栅极线和铝和/或钼的金属化层之间提供稳定和低电阻的电接触，包括使用导电材料，例如氧化铟锡桥。 该器件的金属化层通过延伸到不被铜，铝或另一种难熔金属覆盖的导电材料部分的通孔连接到导电材料。