公开(公告)号：US20190097121A1

公开(公告)日：2019-03-28

申请号：US16199296

申请日：2018-11-26

Applicant: FUJIFILM Corporation

Inventor： Daigo SAWAKI ,  Naoki MURAKAMI

IPC: H01L41/08 ,  H01L41/187 ,  H01L41/047 ,  H01L41/314

Abstract: Provided is a piezoelectric film that has a perovskite structure preferentially oriented to a (100) plane and that comprises a composite oxide represented by the following compositional formula: Pba[(ZrxTi1-x)1-yNby]bO3 wherein 0

公开(公告)号：US20170062746A1

公开(公告)日：2017-03-02

申请号：US15350472

申请日：2016-11-14

Applicant: FUJIFILM CORPORATION

Inventor： Daigo SAWAKI

IPC: H01L51/42 ,  H01L27/30 ,  H01L51/44

CPC classification number: H01L51/4273 ,  H01L27/14665 ,  H01L27/307 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0072 ,  H01L51/0073 ,  H01L51/442 ,  Y02E10/549

Abstract: Provided is a photoelectric conversion element including: a lower electrode, a charge blocking layer which suppresses injection of a charge from the lower electrode, an organic layer which includes a photoelectric conversion layer, and an upper electrode which includes a transparent electrode layer, which are laminated in this order on a substrate. The photoelectric conversion layer is configured of an amorphous film and has a bulk hetero-structure of a P-type organic semiconductor and an N-type organic semiconductor formed of fullerenes. A difference between the ionization potential of the photoelectric conversion layer having the bulk hetero-structure and the electron affinity of the N-type semiconductor is 1.30 eV or greater.

Abstract translation: 提供一种光电转换元件，包括：下电极，抑制从下电极注入电荷的电荷阻挡层，包括光电转换层的有机层和包括透明电极层的上电极， 以此顺序层压在基板上。 光电转换层由非晶膜构成，具有P型有机半导体的本体异质结构和由富勒烯构成的N型有机半导体。 具有体异质结构的光电转换层的电离电位与N型半导体的电子亲和力之间的差为1.30eV以上。