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    PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING DEVICE USING THE SAME
    3.
    发明申请
    PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING DEVICE USING THE SAME 审中-公开
    光电转换元件和成像装置

    公开(公告)号：US20160013248A1

    公开(公告)日：2016-01-14

    申请号：US14865990

    申请日：2015-09-25

    Applicant: FUJIFILM Corporation

    Inventor： Daigo SAWAKI

    IPC: H01L27/30 ,  H01L51/42

    CPC classification number: H01L27/307 ,  C07C225/22 ,  C07D219/02 ,  C07D309/34 ,  C07D487/22 ,  H01L51/0046 ,  H01L51/0053 ,  H01L51/0058 ,  H01L51/006 ,  H01L51/0065 ,  H01L51/0072 ,  H01L51/0091 ,  H01L51/4246 ,  H01L51/4253 ,  H01L51/4273 ,  Y02E10/549

    Abstract: An organic photoelectric conversion element has a light receiving layer which includes at least a photoelectric conversion layer sandwiched between a hole collecting electrode and an electron collecting electrode, and an electron blocking layer is provided between the hole collecting electrode and the electron collecting electrode. The photoelectric conversion layer is formed of a first photoelectric conversion layer which is a bulk hetero layer of an n-type organic semiconductor and a p-type organic semiconductor, and a second photoelectric conversion layer formed in contact with the surface of the first photoelectric conversion layer on the hole collecting electrode side. The average value of the mixing ratio of the n-type organic semiconductor to the p-type organic semiconductor in the second organic semiconductor layer is higher than the average value in the photoelectric conversion layer formed of the first photoelectric conversion layer and the second photoelectric conversion layer.

    Abstract translation: 有机光电转换元件具有至少包含夹在空穴收集电极和电子收集电极之间的光电转换层的光接收层，并且在空穴收集电极和电子收集电极之间设置电子阻挡层。 光电转换层由作为n型有机半导体和p型有机半导体的体异质层的第一光电转换层和与第一光电转换表面接触形成的第二光电转换层形成 在集电极侧。 第二有机半导体层中的n型有机半导体与p型有机半导体的混合比的平均值高于由第一光电转换层和第二光电转换构成的光电转换层的平均值 层。

    PHOTOELECTRIC CONVERSION ELEMENT, PHOTOSENSOR, AND IMAGING DEVICE
    5.
    发明申请
    PHOTOELECTRIC CONVERSION ELEMENT, PHOTOSENSOR, AND IMAGING DEVICE 审中-公开
    光电转换元件，光电传感器和成像设备

    公开(公告)号：US20160351830A1

    公开(公告)日：2016-12-01

    申请号：US15234365

    申请日：2016-08-11

    Applicant: FUJIFILM CORPORATION

    Inventor： Naoyuki HANAKI ,  Yosuke YAMAMOTO ,  Daigo SAWAKI

    IPC: H01L51/00 ,  H01L27/30 ,  H01L51/42

    CPC classification number: H01L51/0072 ,  H01L27/301 ,  H01L27/307 ,  H01L51/0052 ,  H01L51/0054 ,  H01L51/006 ,  H01L51/0094 ,  H01L51/424 ,  H01L51/4253 ,  H01L51/4273

    Abstract: An object of the present invention is to provide a photoelectric conversion element which exhibits excellent heat resistance and responsiveness, and a photosensor and an imaging device which include the photoelectric conversion element. The photoelectric conversion element of the present invention includes: a transparent conductive film; a conductive film; and a photoelectric conversion film and an electron blocking layer which are disposed between the transparent conductive film and the conductive film, wherein the electron blocking layer contains a compound represented by the following Formula (1).

    Abstract translation: 本发明的目的是提供一种显示出优异的耐热性和响应性的光电转换元件，以及包括光电转换元件的光学传感器和图像拾取元件。 该光电转换元件包括设置在透明导电膜和导电膜之间的透明导电膜，导电膜，光电转换膜和电子阻挡层。 电子阻挡膜含有式（1）表示的化合物。

    PHOTOELECTRIC CONVERTER, METHOD OF MANUFACTURING PHOTOELECTRIC CONVERTER AND IMAGING DEVICE
    9.
    发明申请
    PHOTOELECTRIC CONVERTER, METHOD OF MANUFACTURING PHOTOELECTRIC CONVERTER AND IMAGING DEVICE 审中-公开
    光电转换器，制造光电转换器和成像装置的方法

    公开(公告)号：US20140087514A1

    公开(公告)日：2014-03-27

    申请号：US14073504

    申请日：2013-11-06

    Applicant: FUJIFILM CORPORATION

    Inventor： Toshihiro NAKATANI ,  Takashi GOTO ,  Yoshiki MORITA ,  Shinji IMAI ,  Hideyuki SUZUKI ,  Daigo SAWAKI

    IPC: H01L31/18

    CPC classification number: H01L31/18 ,  H01L27/307 ,  H01L51/0026 ,  H01L51/4253 ,  H01L51/4273 ,  H01L51/441 ,  Y02E10/549 ,  Y02P70/521

    Abstract: A photoelectric converter includes a pair of electrodes and a plurality of organic layers. The pair of electrodes is provided above a substrate. The plurality of organic layers is interposed between the pair of electrodes and includes a photoelectric conversion layer and a given organic layer being formed on one electrode of the pair of electrodes. The one electrode is one of pixel electrodes arranged two-dimensionally. The given organic layer has a concave portion that is formed in a corresponding position located above a step portion among the arranged pixel electrodes. An angle θ of the concave portion is less than 50°, where an inclination angle of a tangent plane at a given point on the concave portion to a surface plane of the substrate is defined as θ.

    Abstract translation: 光电转换器包括一对电极和多个有机层。 一对电极设置在基板上。 多个有机层插入在该对电极之间，并且包括形成在该对电极的一个电极上的光电转换层和给定的有机层。 一个电极是二维布置的像素电极之一。 给定的有机层具有形成在布置的像素电极中位于台阶部分之上的对应位置的凹部。 角度和角度 的凹部的面的角度小于50°，其中凹部上的给定点上的切平面与基板的表面平面的倾斜角度定义为θ。

    PIEZOELECTRIC BODY FILM, PIEZOELECTRIC ELEMENT, AND METHOD FOR MANUFACTURING PIEZOELECTRIC ELEMENT
    10.
    发明申请
    PIEZOELECTRIC BODY FILM, PIEZOELECTRIC ELEMENT, AND METHOD FOR MANUFACTURING PIEZOELECTRIC ELEMENT 审中-公开

    公开(公告)号：US20200006622A1

    公开(公告)日：2020-01-02

    申请号：US16560325

    申请日：2019-09-04

    Applicant: FUJIFILM Corporation

    Inventor： Naoki MURAKAMI ,  Daigo SAWAKI

    IPC: H01L41/187 ,  H01L41/316 ,  C01G33/00 ,  C23C14/08 ,  C23C14/34

    Abstract: To provide a piezoelectric body film and a piezoelectric element from which an excellent piezoelectric characteristic can be obtained even in a high-temperature environment and a method for manufacturing a piezoelectric element.A piezoelectric body film of the present invention is a piezoelectric body film containing a perovskite-type oxide represented by Formula (1), in which a content q of Nb with respect to the number of all atoms in the perovskite-type oxide and a ratio r of a diffraction peak intensity from a (200) plane to a diffraction peak intensity from a (100) plane of the perovskite-type oxide, which is measured using an X-ray diffraction method, satisfy Formula (2), Formula (1) A1+δ[(ZryTi1-y)1-xNbx]O2, Formula (2) 0.35≤r/q

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