公开(公告)号：US11950052B2

公开(公告)日：2024-04-02

申请号：US17675850

申请日：2022-02-18

Applicant: Qualcomm Technologies Inc.

Inventor： Karl Grosh ,  Robert J. Littrell

IPC: H04R17/02 ,  H01L41/27 ,  H01L41/314 ,  H01L41/332 ,  H04R7/06 ,  H04R31/00 ,  H10N30/05 ,  H10N30/074 ,  H10N30/082

CPC classification number: H04R17/02 ,  H04R7/06 ,  H04R31/003 ,  H10N30/05 ,  H10N30/074 ,  H10N30/082 ,  H04R17/025 ,  H04R31/00 ,  H04R2201/003 ,  H04R2410/03

Abstract: A transducer of the preferred embodiment including a transducer and a plurality of adjacent, tapered cantilevered beams. Each of the beams define a beam base, a beam tip, and a beam body disposed between the beam base and the beam tip. The beams are arranged such that each of the beam tips extends toward a common area. Each beam is joined to the substrate along the beam base and is free from the substrate along the beam body. A preferred method of manufacturing a transducer can include: depositing alternating layers of piezoelectric and electrode onto the substrate in block, processing the deposited layers to define cantilever geometry in block, depositing metal traces in block, and releasing the cantilevered beams from the substrate in block.

公开(公告)号：US11590533B2

公开(公告)日：2023-02-28

申请号：US16497888

申请日：2018-03-23

Applicant: Robert Bosch GmbH

Inventor： Johannes Henneberg ,  Andre Gerlach ,  Marko Liebler

IPC: B06B1/06 ,  H01L41/047 ,  H01L41/09 ,  H01L41/113 ,  H01L41/193 ,  H01L41/314 ,  H04R17/00

Abstract: An acoustic transducer, in particular for an ultrasonic sensor, is proposed. The acoustic transducer has a functional group, the functional group encompassing a diaphragm cup and at least one electroacoustic transducer element. The acoustic transducer furthermore has a housing. The diaphragm cup encompasses a vibration-capable diaphragm and an encircling wall, as well as at least one electroacoustic transducer element, the transducer element being embodied to excite the diaphragm to vibrate and/or to convert vibrations of the diaphragm into electrical signals. The diaphragm cup is constituted from a plastic material, the at least one transducer element being integrated into the vibration-capable diaphragm, the transducer element having an electrically active polymer.

公开(公告)号：US11581306B2

公开(公告)日：2023-02-14

申请号：US17180174

申请日：2021-02-19

Applicant: Akoustis, Inc.

Inventor： Shawn R. Gibb ,  David Aichele ,  Ramakrishna Vetury ,  Mark D. Boomgarden ,  Jeffrey B. Shealy

IPC: H01L27/06 ,  H01L21/02 ,  H01L21/8252 ,  H01L27/20 ,  H01L29/20 ,  H01L29/417 ,  H01L29/80 ,  H03F3/19 ,  H03F3/21 ,  H03H3/08 ,  H03H9/46 ,  H04B1/44 ,  H01L41/18 ,  H01L41/314 ,  H01L41/37 ,  H03H9/02 ,  H01L29/778 ,  H03H3/02 ,  H01L23/66 ,  H03H9/05 ,  H03H9/10

Abstract: A method of manufacture and structure for a monolithic single chip single crystal device. The method can include forming a first single crystal epitaxial layer overlying the substrate and forming one or more second single crystal epitaxial layers overlying the first single crystal epitaxial layer. The first single crystal epitaxial layer and the one or more second single crystal epitaxial layers can be processed to form one or more active or passive device components. Through this process, the resulting device includes a monolithic epitaxial stack integrating multiple circuit functions.

公开(公告)号：US11541653B2

公开(公告)日：2023-01-03

申请号：US16882215

申请日：2020-05-22

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Domenico Giusti ,  Andrea Nicola Colecchia ,  Gaetano Santoruvo

IPC: B41J2/03 ,  H01L27/20 ,  H01L41/09 ,  H01L41/314

Abstract: A microfluidic device for continuous ejection of fluids includes: a semiconductor body that laterally delimits chambers; an intermediate structure which forms membranes each delimiting a top of a corresponding chamber; and a nozzle body which overlies the intermediate structure. The device includes, for each chamber: a corresponding piezoelectric actuator; a supply channel which traverses the intermediate structure and communicates with the chamber; and a nozzle which traverses the nozzle body and communicates with the supply channel. Each actuator is configured to operate i) in a resting condition such that the pressure of a fluid within the corresponding chamber causes the fluid to pass through the supply channel and become ejected from the nozzle as a continuous stream, and ii) in an active condition, where it causes a deformation of the corresponding membrane and a consequent variation of the pressure of the fluid, causing a temporary interruption of the continuous stream.

公开(公告)号：US11473200B2

公开(公告)日：2022-10-18

申请号：US17092305

申请日：2020-11-08

Applicant: Richard C Thuss

Inventor： Richard C Thuss

IPC: C23C24/04 ,  H01L35/34 ,  H01F41/16 ,  H01L41/314 ,  H01L35/16

Abstract: An apparatus and methods to make a product using supersonic cold-spray deposition of brittle functional materials in fine and micro features down to 10 μm in minimum dimension. The process may use semiconductors such as bismuth and antimony telluride formulations, and hard magnetic materials such as neodymium iron boride and strontium ferrite, and soft magnetic materials such as manganese zinc ferrite, and manganese ferrite materials. In addition, the methods and processes have been demonstrated for materials as soft as graphite and as hard as boron carbide. Micro components have been deposited in square, tapered and elongated shaped features with feature sizes as small as 10 μm in minimum dimensions and applied to flat and highly complex shaped surfaces. This process when combined with other cold spray manufacturing processes allows the total additive manufacturing of complete electronic, magnetic and other complex devices including multiple type of brittle functional materials.

公开(公告)号：US11367826B2

公开(公告)日：2022-06-21

申请号：US16296291

申请日：2019-03-08

Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED

Inventor： Kenji Shibata ,  Kazutoshi Watanabe ,  Fumimasa Horikiri

IPC: H01L41/187 ,  H01L41/08 ,  H01L41/314

Abstract: There is provided a piezoelectric laminate, including: a substrate; and a piezoelectric film formed on the substrate, wherein the piezoelectric film is a film containing an alkali niobium oxide of a perovskite structure represented by a composition formula of (K1-xNax)NbO3 (0

公开(公告)号：US20220128353A1

公开(公告)日：2022-04-28

申请号：US17436128

申请日：2020-03-16

Applicant: AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH

Inventor： Huajun Liu ,  Kui Yao ,  Lei Zhang

IPC: G01B17/04 ,  H01L41/08 ,  H01L41/314 ,  H01L41/29 ,  G01N29/04 ,  G01B11/16

Abstract: A structural health monitoring method includes directly forming an acoustic transducer on a surface of a structure to be monitored; generating, by the acoustic transducer, an acoustic wave to apply stress loading to a region of interest on the structure; and detecting a presence of a defect in the region of interest. Detecting includes a non-contact optical imaging of the region of interest with and without the stress loading and an analysis of imaging data from the non-contact optical imaging.

公开(公告)号：US11056532B2

公开(公告)日：2021-07-06

申请号：US16304965

申请日：2016-07-01

Applicant: INTEL CORPORATION

Inventor： Han Wui Then ,  Marko Radosavljevic ,  Sansaptak Dasgupta ,  Paul B. Fischer ,  Sanaz K. Gardner ,  Bruce A. Block

IPC: H01L27/20 ,  H01L21/02 ,  H01L29/04 ,  H01L29/08 ,  H01L29/20 ,  H01L29/205 ,  H01L29/417 ,  H01L29/66 ,  H01L29/778 ,  H01L41/047 ,  H01L41/08 ,  H01L41/187 ,  H01L41/29 ,  H01L41/314 ,  H03H3/02 ,  H03H9/02 ,  H03H9/05 ,  H03H9/17 ,  H03H9/54 ,  H03H9/56

Abstract: Techniques are disclosed for monolithic co-integration of thin-film bulk acoustic resonator (TFBAR, also called FBAR) devices and III-N semiconductor transistor devices. In accordance with some embodiments, one or more TFBAR devices including a polycrystalline layer of a piezoelectric III-N semiconductor material may be formed alongside one or more III-N semiconductor transistor devices including a monocrystalline layer of III-N semiconductor material, over a commonly shared semiconductor substrate. In some embodiments, either (or both) the monocrystalline and the polycrystalline layers may include gallium nitride (GaN), for example. In accordance with some embodiments, the monocrystalline and polycrystalline layers may be formed simultaneously over the shared substrate, for instance, via an epitaxial or other suitable process. This simultaneous formation may simplify the overall fabrication process, realizing cost and time savings, at least in some instances.

公开(公告)号：US10892733B2

公开(公告)日：2021-01-12

申请号：US15947577

申请日：2018-04-06

Applicant: SiTime Coporation

Inventor： Joseph C. Doll ,  Paul M. Hagelin ,  Ginel C. Hill ,  Nicholas Miller ,  Charles I. Grosjean

IPC: H01L41/09 ,  H03H9/02 ,  H03H9/24 ,  H01L41/047 ,  H01L41/253 ,  H01L41/29 ,  H01L41/314 ,  H03H9/15 ,  H03H3/02

Abstract: A microelectromechanical system (MEMS) resonator includes a degenerately-doped single-crystal silicon layer and a piezoelectric material layer disposed on the degenerately-doped single-crystal silicon layer. An electrically-conductive material layer is disposed on the piezoelectric material layer opposite the degenerately-doped single-crystal silicon layer, and patterned to form first and second electrodes.

公开(公告)号：US10804455B2

公开(公告)日：2020-10-13

申请号：US16052810

申请日：2018-08-02

Applicant: eLux Inc.

Inventor： Mark Albert Crowder ,  Changqing Zhan ,  Karen Nishimura ,  Paul Schuele

IPC: H01L41/332 ,  H01L41/331 ,  H01L41/187 ,  H01L41/297 ,  H01L41/314 ,  H01L41/193

Abstract: A method is provided for fabricating piezoelectric plates. A sacrificial layer is formed overlying a growth substrate. A template layer, with openings exposing sacrificial layer surfaces, is formed over the sacrificial layer. An adhesion layer/first electrode stack is selectively deposited in the openings overlying the sacrificial layer surfaces, and a piezoelectric material formed in the openings overlying the stack. Then, a second electrode is formed overlying the piezoelectric material. Using the second electrode as a hardmask, the piezoelectric material is etched to form polygon-shaped structures, such as disks, attached to the sacrificial layer surfaces. After removing the template layer and annealing, the polygon-shaped structures are separated from the sacrificial layer. With the proper choice of growth substrate material, the annealing can be performed at a relatively high temperature.